74 results about "Gallium selenide" patented technology

The invention discloses a Cu-In-Ga-Se or Cu-In-Al-Se solar battery absorbing layer target pertaining to the field of photoelectric functional materials, and a preparation method thereof. High-purity cuprous selenide powder, indium selenide powder, gallium selenide powder or aluminum selenide powder are fully mixed evenly according to the stoichiometric ratio of a CuIn1-xGaxSe2 or CuIn1-xAlxSe2 solar battery absorbing layer, and then sintered and molded by hot-pressing under protective atmosphere or made into a biscuit after cold press molding or cold isostatic pressing, and the biscuit is sintered under protective atmosphere and certain pressure or does not go through pressure sintering. The technique of the invention is simple and convenient, has high efficiency and low cost, and the produced sputtering target is provided with uniform composition and homogeneous CuIn1-xGaxSe2 or CuIn1-xAlxSe2 phase, with the relative density more than 90 percent and stable performance. The invention is mainly applied to the preparation of a Cu-In-Ga-Se and Cu-In-Al-Se solar thin film battery absorbing layer.

The invention refers to a manufacturing method for selenide or sulfide of copper, indium or gallium. In the manufacturing process of copper, indium or gallium selenide and / or sulphur optical absorbing layer film, uses vacuum magnetism control splattering, heating and evaporating method or chemical water bath electrodeposition method to deposit a metal preprocessed layer with chemical formula proportion of Cu, In, Ga on the natrium calcium glass Mo substrate, then carries on optical selenide or / and sulfide reaction in the thermal process vacuum room, the character lies in: the battery base board deposited with the preprocessed layer are heated upon the two surfaces, the back surface of the base board is heated with contacting heat reservoir, the surface coated with metal preprocessed layer is heated with light irradiation, when the temperature rises to the 400-560oC evenly and quickly, carries on the cooperative heating with contacting heat reservoir and light irradiation to the selenium source or the sulphur source, makes the metal preprocessed layer converted into the compound semiconductor photoelectric film material.

The invention relates to a method for manufacturing a sodium-doped absorbing layer on a reel-to-reel flexible polyimide (PI) substrate. The method is characterized by comprising the steps of 1 performing preparation before work, 2 preparing Na-doped indium gallium selenide (IGS) film, 3 preparing a copper-rich copper indium gallium selenide (CIGS) film; and 4 preparing the sodium-doped absorbing layer on the reel-to-reel flexible PI substrate. The method adopts a vacuum evaporation technology, keeps a distance between evaporation sources and the PI substrate to be 300-400mm and adjusts tape transporting speed of the PI substrate to enable the PI substrate to be lower than 450 DEG C, elements evaporated by the evaporation sources can be compounded on a back electrode Mo of the PI substrate well, and the Na-doped IGS film with even thickness is formed on the back electrode Mo. Due to the fact that Na atoms diffuse and enter the crystal boundary position of the IGS film to form a deep energy level defect, a foundation is laid for fully even Na doping into a large-area absorbing layer and strengthening of adhesion of the absorbing layer, and the effects of improving open-circuit voltage and electrical property of batteries are played.

A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

The invention provides a polycrystalline synthesis method and a single-crystal growth method of gallium selenide and relates to polycrystalline synthesis and single-crystal growth methods of mid-infrared and far-infrared non-linear materials, aiming at solving the technical problems of existing GaSe polycrystalline synthesis that the stoichiometric deviation is great and the yield is low, an invalid crystal nucleus is prone to form in a spontaneous nucleation phase and a single-crystal growth direction is uncertain. Polycrystalline synthesis comprises the following steps: putting monomer Ga into a small boat and putting the small boat at one end of a quartz tube; putting Se at the other end of the quartz tube; after vacuumizing, carrying out heat sealing; putting the quartz tube into a horizontal double-temperature-region pipe type resistance furnace and synthesizing to obtain a GaSe poly-crystal, wherein the stoichiometric ratio is 1 to (1 to 1.05) and the yield is more than 97 percent. Single-crystal growth comprises the following steps: adding the GaSe poly-crystal into a PBN (Pyrolytic Boron Nitride) crucible; then vertically putting the PBN crucible into the quartz tube; after vacuumizing, carrying out heat sealing; putting the quartz tube into a vertical double-temperature-region pipe type resistance furnace; after the single-crystal growth is finished, obtaining a GaSe single-crystal. The gallium selenide can be used as the mid-infrared and far-infrared laser materials for realizing output of 8Mum to 10Mum laser.

The invention discloses a method for preparing a flexible optical detector on the basis of the two-dimensional functional material, which relates to a preparation method for the optical detector. The method mainly aims to solve the technical problems that the conventional flexible optical detector has high photolithographic process technology cost and has difficulty in realizing mass production. The method comprises the following steps of: 1) preparing semiconductor materials, i.e. single crystal gallium selenide or single crystal gallium sulfide; 2) sticking and stripping on the surface of the semiconductor material by a scotch adhesive tape; 3) transferring the two-dimensional semiconductor material to a substrate; 4) covering a copper mask to the substrate processed in the step 3), depositing a gold metal layer and a chrome layer, removing the mask, and carrying out annealing processing; and 5) screening electrode couples with photoelectronic response to ultraviolet light in an optical detector semiconductor obtained in the step 4) to obtain the flexible optical detector prepared on the basis of the two-dimensional functional material. The ultraviolet light response degree of the optical detector is above 100AW<-1>. The flexible optical detector can be used as a microelectronic device and a photosensitive device to be used for the field of information transmission and storage.

The invention discloses a preparation method of a field effect transistor based on a two-dimensional gallium selenide material, and is used for solving the technical problem that an existing field effect transistor preparation method is low in preparation efficiency. According to the technical scheme, under a microscope and a three-dimensional aligning-transferring platform, the material is transferred onto a silicon substrate with the aid of PDMS, influence of adhesive residues to devices can be avoided effectively, a mask can be prepared from carbon fibers and PDMS, and then is provided witha metal electrode in an evaporation manner, a straight channel with the size about 4-7 mu m can be prepared, and a material with the smaller size (greater than or equal to 10 mu m) can be prepared into the field effect transistor. The preparation method of the two-dimensional GaSe field effect transistor is simple to operate and low in cost, and is convenient and speedy; the material is not injured; and the preparation efficiency of the field effect transistor is improved.

A method is provided for forming a solution-processed metal and mixed-metal selenide semiconductor using selenium (Se) nanoparticles (NPs). The method forms a first solution including SeNPs dispersed in a solvent. Added to the first solution is a second solution including a first material set of metal salts, metal complexes, or combinations thereof, which are dissolved in a solvent, forming a third solution. The third solution is deposited on a conductive substrate, forming a first intermediate film comprising metal precursors, from corresponding members of the first material set, and embedded SeNPs. As a result of thermally annealing, the metal precursors are transformed and the first intermediate film is selenized, forming a first metal selenide-containing semiconductor. In one aspect, the first solution further comprises ligands for the stabilization of SeNPs, which are liberated during thermal annealing. In another aspect, the metal selenide-containing semiconductor comprises copper, indium, gallium diselenide (CIGS).

The invention relates to a rapid synthetic method of polycrystalline raw materials of gallium selenide and doped series of gallium selenide, and the rapid synthetic method can solve the problems that synthetic rates are low, components deviate the stoichiometric ratio and the like in present synthetic methods of polycrystalline raw materials of gallium selenide and doped series of gallium selenide. The rapid synthetic method is characterized in that a single-temperature-zone electric resistance furnace is employed for rapid heating, a furnace body has a small angle of inclination, a synthetic process is visible, and the furnace body uniformly oscillates after the synthesis. The rapid synthetic method comprises concrete steps of: (1) pretreating a crucible for the synthesis, (2) quantifying, (3) raising temperature, (4) oscillating, and (5) reducing temperature. The synthetic polycrystalline raw materials of gallium selenide and doped series of gallium selenide by means of the rapid synthetic method of the invention have the advantages of being fast in synthetic rate, being good in uniformity, being close to the stoichiometric ratio and the like.

A quartz boat and a method for using the quartz boat to complete polycrystalline synthesis and single crystal growth of gallium selenide at one time are disclosed, and the present invention relates toa crystal synthesis apparatus and method. The invention aims to solve the technical problem that a single crystal obtained through an existing two-step growth method is high in impurity content and high in cost. The quartz boat of the present invention is composed of a seed crystal well region, a shouldering regiona closed region and an open region, wherein the seed crystal well region is in a cylindrical shape sealed at one end, the shouldering region is in a truncated cone shape, the closed region is in a cylindrical shape, the open region is semi-cylindrical, the regions are connected in sequence, and the axes of the regions are in a straight line. The method of using the quartz boat to complete polycrystal synthesis and single crystal growth of gallium selenide comprises the steps of:adding selenium and gallium to the closed zone of the quartz boat, and placing the quartz boat in a quartz tube for vacuum encapsulation; synthesizing polycrystalline in a single temperature zone furnace; and then directly placing the quartz tube in a vertical bridgman furnace to obtain a GaSe single crystal. The single crystal absorption coefficient is less than 0.1 cm<-1>. The quartz boat can be used for crystal synthesis.

The invention discloses a Cu-In-Ga-Se or Cu-In-Al-Se solar battery absorbing layer target pertaining to the field of photoelectric functional materials, and a preparation method thereof. High-purity cuprous selenide powder, indium selenide powder, gallium selenide powder or aluminum selenide powder are fully mixed evenly according to the stoichiometric ratio of a CuIn[1-x]GaxSe2 or CuIn[1-x]AlxSe2 solar battery absorbing layer, and then sintered and molded by hot-pressing under protective atmosphere or made into a biscuit after cold press molding or cold isostatic pressing, and the biscuit is sintered under protective atmosphere and certain pressure or does not go through pressure sintering. The technique of the invention is simple and convenient, has high efficiency and low cost, and the produced sputtering target is provided with uniform composition and homogeneous CuIn[1-x]GaxSe2 or CuIn[1-x]AlxSe2 phase, with the relative density more than 90 percent and stable performance. The invention is mainly applied to the preparation of a Cu-In-Ga-Se and Cu-In-Al-Se solar thin film battery absorbing layer.

The invention relates to a compound semiconductor laminated film solar cell, comprising a copper indium gallium selenide cell (CIGS) bottom cell with a low bandgap and a copper gallium selenide (CGS) top cell with a high bandgap. The compound semiconductor laminated film solar cell is characterized in that the bottom cell and the top cell are internally connected in series into a whole through a connecting layer; and the connecting layer is composed of a transparent metal oxide conductive layer positioned at the bottom cell and a nanometer metal conductive layer positioned at the top cell. According to the compound semiconductor laminated film solar cell, the combination of transparent metal oxide and a nanometer metal film is used as the connecting layer of the bottom cell and the top cell, so that the technological compatibility problem of the bottom cell and the top cell is solved, the internal electrical connection of the bottom cell and the top cell is realized, the manufacturing process of the cell is simplified, the manufacturing cost of the cell is reduced, and the cell is simple in structure.

A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

The inventiondiscloses avisual three-temperature-area gallium selenide single crystal growth device and method, and relates to a crystal growth device and method. The invention aims to solve technicalproblems of uneven stress distribution and low transmittance of gallium selenide single crystal grown by using a bridgman-stockbarger method in the prior art. The device comprises an outer sleeve, aninner sleeve, a heating resistance wire, an annular cavity, a reflection film, a temperature thermocouple, an end cap, and a heat preservation plug; the reflection film is attached to the inner wallof the outer sleeve; the annular cavity between the outer sleeve and the inner sleeve which are prepared from transparent materials is a vacuum cavity; and the heating resistance wire is arranged in the annular cavity. The method comprises the following steps: placing gallium selenide crystal seeds in a PBN boat, obliquely sealing in a vacuum quartz tube in a suspended manner, placing the quartz tube in the middle of the growth device, adjusting the temperature gradient of the three temperature areas, melting a part of the crystal seeds, fully melting polycrystal materials, then cooling for curing, and finally cooling to the room temperature to obtain allium selenide single crystals. The transmittance of the single crystals is 64%-66%, and the single crystals can be applied in civil and national defense fields.

The present invention discloses a terahertz difference frequency source remote active detection system. The system comprises a high-power 1064nm laser, an optical parametric oscillator, a beam delay line, half wave plates, a polarizing beam splitter prism, a gallium selenide crystal, terahertz lenses, a terahertz reflector and a terahertz detector. According to the terahertz difference frequency source remote active detection system of the invention, a high-power terahertz difference frequency source radiation technique is adopted, the quasi-parallel emission-echo focusing technique of the terahertz lens group is used in combination, and therefore, the active detection of the terahertz reflected / scattered signals of a long-distance target can be realized. The terahertz difference frequency source remote active detection system of the invention has the advantages of wide coverage band, high frequency band compatibility, simple structure, high signal-to-noise ratio, long detection distance and the like, and can work under room temperature.

An arrangement (10) for efficiently generating tunable pulsed laser output at 8-12 microns. The arrangement (10) includes a laser (12), a first optical parametric oscillator (14) of unique design, and a second optical parametric oscillator (22). The first oscillator (14) is constructed with an energy shifting crystal (20) and first and second reflective elements (16) and (18) disposed on either side thereof. Energy from the laser (12) at a first wavelength is shifted by the crystal and output at a second wavelength. The second wavelength results from a secondary process induced by a primary emission of energy at a third wavelength, the third wavelength resulting from a primary process generated from the first wavelength in the crystal. Mirror coatings are applied on the reflective elements (16 and / or 18) for containing the primary emission and enhancing the secondary process. The second optical parametric oscillator (22) then shifts the energy output by the first OPO (14) at the second wavelength to the desired fourth wavelength.

The invention provides a growing method of a gallium selenide two-dimensional material monocrystal block material. Pure selenium powder and pure gallium powder are used as raw materials and take a chemical reaction at high temperature to obtain a polycrystal gallium selenide material. Polycrystal gallium polycrystals are put into a three-temperature-zone furnace to grow polycrystal gallium crystals by a bridgman method; then, the cutting is performed along a polycrystal gallium natural cleavage layer to obtain the gallium selenide two-dimensional material monocrystal block material.

The invention relates to an optical frequency converter of a silicon nitride micro-ring integrated gallium selenide film, which comprises a double-straight- waveguide type silicon nitride micro-ring cavity and a gallium selenide film, and is characterized in that the gallium selenide film covers the upper surface of the double-straight-waveguide type silicon nitride micro-ring cavity. Pump light enters the silicon nitride micro-ring cavity from an upper straight waveguide through side edge coupling. The silicon nitride micro-ring cavity has an amplification effect on a pump light field, so that a very strong evanescent light field is formed on the surface of the micro-ring. The evanescent light field interacts with the gallium selenide film with an ultrahigh second-order nonlinear coefficient to efficiently generate frequency doubling light or sum frequency light. The generated frequency doubling light or sum frequency light is coupled to a lower straight waveguide through the silicon nitride micro-ring cavity and output. The optical frequency converter which is simple in preparation process, low in cost, compact in structure and high in conversion efficiency is formed, and is expected to be applied to the fields of optical communication, photonic integrated chips and the like.

An arrangement (10) for efficiently generating tunable pulsed laser output at 8-12 microns. The arrangement (10) includes a laser (12), a first optical parametric oscillator (14) of unique design, and a second optical parametric oscillator (22). The first oscillator (14) is constructed with an energy shifting crystal (20) and first and second reflective elements (16) and (18) disposed on either side thereof. Energy from the laser (12) at a first wavelength is shifted by the crystal and output at a second wavelength. The second wavelength results from a secondary process induced by a primary emission of energy at a third wavelength, the third wavelength resulting from a primary process generated from the first wavelength in the crystal. Mirror coatings are applied on the reflective elements (16 and / or 18) for containing the primary emission and enhancing the secondary process. The second optical parametric oscillator (22) then shifts the energy output by the first OPO (14) at the second wavelength to the desired fourth wavelength. In the illustrative embodiment, the first optical parametric oscillator (14) includes an x-cut rubidium titanyl arsenate crystal (20) and the second optical parametric oscillator (22) includes a silver gallium selenide crystal. The first wavelength is approximately 1.06 microns, the second wavelength is approximately 3.01 microns, the third wavelength is approximately 1.61 microns, and the fourth wavelength is in the range of 8-12 microns.

The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and a heating step of heating the resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y / X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated.

The invention discloses a method for preparing a CIGS (copper indium gallium selenide) film with a non-vacuum method, which comprises the following steps of: (1) preparing powder: weighing and mixing three types of powder: high-purity cuprous selenide (Cu2Se), indium selenide (In2Se3) and gallium selenide (Ga2Se3); preparing mixed powder of the required stoichiometric ratio with the three types of powder; (2) ball milling: carrying out ball milling on the mixed powder for a long time in a high-energy ball mill to ensure that the average grain diameter of the powder is less than or equal to 2mu m; (3) preparing slurry: mixing the ball-milled powder and alcohol to obtain slurry; (4) coating: coating the surface of a substrate with the slurry; (5) baking: baking the coated substrate to remove solvent to form a CIGS precursor film; and (6) annealing: carrying out annealing processing under the protection of the selenium-containing atmosphere to obtain the CIGS film. The method for preparing the CIGS film with the non-vacuum method has the advantages of less investment, simple technology, high raw material use ratio and low production cost and is suitable for large-area film formation, and no expensive vacuum equipment is adopted.

The invention discloses a GaSe nano-material, a liquid phase stripping method and application of the method. The liquid phase stripping method comprises the steps that gallium selenide and isopropyl-ketone are mixed to obtain a mixed solution, the mixed solution is placed in a water bath, ultrasonic dispersion is conducted to obtain initial dispersion liquid, isopropyl-ketone is added into the initial dispersion liquid, the mixture is placed in the water bath, separating is conducted to obtain supernatant, secondary ultrasonic dispersion is conducted, separating is conducted to obtain supernatant, and drying is conducted to obtain the product. The thickness of the GaSe nano-material can be controlled by adjusting the experiment temperature or the centrifugal rotating speed, no template isneeded in the process of preparing materials with different thicknesses, the process is simple, the cost is low, the prepared two-dimensional GaSe nano-material is large in number, uniform in dispersion and uniform in thickness, and the GaSe nano-material with different thicknesses can be prepared by controlling different experiment conditions according to needs.

The invention discloses a method for synthesizing indium gallium selenide nanocrystal and a film thereof from a polyalcohol solution. The method comprises the following steps: putting 40ml of triethylene glycol into a three-neck flask, adding 0.45mmol Se powder, and magnetically stirring; adding nitrogen and 25-100mu L of dodecyl mercaptan and 0.1-1.2ml of ethylenediamine solution to obtain an anion precursor solution; putting 10ml of triethylene glycol into the flask, adding indium chloride tetrahydrate and 0.1mmol / mL gallium chloride solution, and performing ultrasonic dissolution to obtain a cation precursor solution; slowly heating the anion solution in the three-neck flask to 220-260 DEG C; quickly injecting the cation precursor solution; keeping the temperature at 200-240 DEG C and performing reflux for 30min; cooling to room temperature to obtain a solution of (In(1-x)Gax)2Se3 nanocrystal; and performing purification and extraction to obtain a solid-state film of indium gallium selenide nanocrystal. According to the method disclosed by the invention, the reaction process is safe and reliable, the cost is low, the method is easy to operate, the product is stable, the stoichiometric ratio of In, Ga and Se is adjustable, and the repeatability is relatively good.

The invention discloses a waveguide type nonlinear crystal allowing THz waves to be produced efficiently and a manufacturing method of the waveguide type nonlinear crystal. The crystal is provided with a cycle reversal nonlinear crystal round rod, and a layer of surface plasma cladding is deposited on the periphery of the cycle reversal nonlinear crystal round rod. The cycle reversal nonlinear crystal round rod is a gallium arsenide crystal round rod, or a gallium selenide crystal round rod or a gallium phosphide crystal round rod. The manufacturing method comprises the steps that two or more semiconductor epitaxial wafers of which the nonlinear coefficients are positive and two or more semiconductor epitaxial wafers of which the nonlinear coefficients are negative are arranged at intervals and are manufactured into a cycle reversal nonlinear crystal based on the direct bonding technology; the bonded cycle reversal nonlinear crystal is manufactured into the cycle reversal nonlinear crystal round rod in a columnar structure with the diameter being 50-100 microns based on the etching and grinding method; the layer of plasma modulation cladding is deposited on the surface of the cycle reversal nonlinear crystal round rod based on the film coating and etching method. The waveguide type nonlinear crystal allows pump light and the produced THz waves to effectively coincide and be propagated, so that the production efficiency of the THz waves is improved.

The invention relates to a method for producing a CIGS solar battery absorption layer through an evaporation method, which includes the steps of evaporating cuprous selenide (Cu2Se) powder, indium selenide (In2Se3) powder and gallium selenide (Ga2Se3) powder by using a vacuum evaporation coating method and forming a CIGS film on a substrate. According to the method for producing the CIGS film, only one device is required, the film is formed once, the method is simple and easy to operate, the control of composition of the CIGS film is convenient to control through changing the proportion of the powder or changing the evaporation rate, and the production cost and the production cycle of the CIGS film solar battery can be effectively reduced.

The invention discloses a method for determining optimal doping ratio of nonlinear gallium selenide crystal, which belongs to the field of technique physics and solves the problem of low accuracy of the traditional method for determining the optimal doping ratio of nonlinear gallium selenide crystal. According to the method, the spectral quality of a laser absorption spectrum is adopted to determine the optimal doping ratio of the equivalent element of the GaSe crystal; and when the ratio of an exciton absorption coefficient peak value to a trough value is maximum, an exciton absorption spectral line is narrowest or the slope in the long wave direction of the exciton absorption spectral line is maximum, the doping ratio is determined to be optimal. The accuracy of the method is determined by a PFC (power factor correction) device, and a result proves that the conversion efficiency is highest when the crystal with the optimal doping ratio is adopted.

The invention provides a method for recycling copper, indium, gallium and selenium from indium gallium selenium wastes containing copper. The method comprises the following steps: smashing indium gallium selenium to form powder; leaching the powder in a nitric acid so as to obtain a nitric acid leaching liquid; adding a reducing agent into the nitric acid leaching liquid so as to obtain crude selenium and a reducing liquid in a reducing manner; adding alkali into the reducing liquid and regulating pH to reach 10 to 14 so as to obtain an alkali leaching liquid and alkali leaching residues; neutralizing or electrolyzing the alkali leaching liquid with an acid so as to obtain gallium hydroxide or pure gallium; leaching the alkali leaching residues with a leaching agent so as to obtain ammonia leaching residues and an ammonia leaching liquid; reducing the ammonia leaching liquid with the reducing agent so as to obtain copper powder; and leaching the ammonia leaching residues with the acid and adding the reducing agent for replacement so as to obtain crude indium. When the recycling is carried out by utilizing the method, the indium can be simply and efficiently recycled while the copper, the gallium and the selenium can be efficiently recycled at the same time. Thus, the process procedures are simplified. The method is simple and convenient to operate, has no special requirement on equipment and realizes effective reduction in process production cost.

The invention discloses a rapidly-charged lithium ion secondary battery. The battery comprises a positive electrode system and a negative electrode system, wherein the negative electrodes system comprises the following components based on mass percentages: 30-40% of bamboo charcoal powder, 15-35% of polysilicon, 10-30% of germanium material, and 5-20% of gallide, wherein the gallide is selected from at least one kind of gallium nitride, gallium antimonide and gallium selenide. The lithium ion secondary battery disclosed by the invention has relatively high rapid charging performance, and the charging temperature rise is low and is not greater than 12 DEG C in the whole charging process; and the battery is high in safety performance and does not cause the phenomena of high temperature and explosion even if the battery is punctured and short circuited.

The invention discloses a preparation method of a field effect transistor based on a two-dimensional gallium selenide material, and is used for solving the technical problem that an existing field effect transistor preparation method is low in preparation efficiency. According to the technical scheme, under a microscope and a three-dimensional aligning-transferring platform, the material is transferred onto a silicon substrate with the aid of PDMS, influence of adhesive residues to devices can be avoided effectively, a mask can be prepared from carbon fibers and PDMS, and then is provided witha metal electrode in an evaporation manner, a straight channel with the size about 4-7 mu m can be prepared, and a material with the smaller size (greater than or equal to 10 mu m) can be prepared into the field effect transistor. The preparation method of the two-dimensional GaSe field effect transistor is simple to operate and low in cost, and is convenient and speedy; the material is not injured; and the preparation efficiency of the field effect transistor is improved.

The invention provides a method for using copper sulphate and gallium nitrate to prepare a copper gallium selenide photoelectric film, and belongs to the technical field of the preparation of the photoelectric film used for solar cells. The copper gallium selenide photoelectric film is obtained by the following steps of: firstly, cleaning a glass substrate, then, adding copper sulphate, gallium nitrate hydrate and selenium dioxide into a solvent, and adjusting the PH value to be 4.0-7.0; using a spin coating method to obtain a precursor film on the glass substrate, carrying out drying, and putting the precursor film into a closed container containing hydrazine hydrate; avoiding contact between the precursor film sample and hydrazine, and placing the closed container with the sample into a dyer for heating and heat preservation; and finally taking out the sample, carrying out drying, and obtaining the copper gallium selenide photoelectric film. According to the invention, the high-temperature high-vacuum condition is not needed, the requirements on instruments and equipment are low, the production cost is low, the production efficiency is high, and the operation is easy. The obtained copper gallium selenide photoelectric film is relatively good in continuity and uniformity, the main phase is the copper gallium selenide phase, the components and structure of a target product can be easily controlled in the new process, and the invention provides a low-cost industrialized production method for preparing the high-performance copper gallium selenide photoelectric film.