Preparation method of field effect transistor based on two-dimensional gallium selenide material

A field effect transistor, target material technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low preparation efficiency, and achieve the effect of simple method, reduced process steps, and easy operation
CN107994099BActive Publication Date: 2019-08-09NORTHWESTERN POLYTECHNICAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NORTHWESTERN POLYTECHNICAL UNIV
Publication Date
2019-08-09

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Abstract

The invention discloses a preparation method of a field effect transistor based on a two-dimensional gallium selenide material, and is used for solving the technical problem that an existing field effect transistor preparation method is low in preparation efficiency. According to the technical scheme, under a microscope and a three-dimensional aligning-transferring platform, the material is transferred onto a silicon substrate with the aid of PDMS, influence of adhesive residues to devices can be avoided effectively, a mask can be prepared from carbon fibers and PDMS, and then is provided witha metal electrode in an evaporation manner, a straight channel with the size about 4-7 mu m can be prepared, and a material with the smaller size (greater than or equal to 10 mu m) can be prepared into the field effect transistor. The preparation method of the two-dimensional GaSe field effect transistor is simple to operate and low in cost, and is convenient and speedy; the material is not injured; and the preparation efficiency of the field effect transistor is improved.
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Description

technical field

[0001] The invention relates to a method for preparing a field effect transistor, in particular to a method for preparing a field effect transistor based on a two-dimensional gallium selenide material. Background technique

[0002] Since the discovery of graphene in 2004, two-dimensional materials have attracted widespread attention due to their unique physical and chemical properties and their great research value. Field-effect transistors based on two-dimensional GaSe materials also show great application prospects in the field of photodetectors due to their high photoresponsivity, high external quantum efficiency and other excellent properties. At present, the commonly used method for preparing field effect transistors based on two-dimensional materials is to prepare a mask by photolithography or copper mesh, and then combine with evaporation technology to prepare electrodes.

[0003] Document 1 "Huang H, Wang P, Gao Y, et al. Highly sensitive phototransi...

Claims

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