4 results about "Scotch tape" patented technology

The embodiment of the present application relates to the field of detection technology and discloses a defect detection method, which processes a detection image to select an empty detection item area and a detection item area, then grayscales the empty detection item area and the detection item area to obtain a grayscale image, further calculates the background mean and background variance of the grayscale image of the empty detection item area, determines the local mean and local variance of the grayscale image of the detection item area from the background mean, then corrects the grayscale value of each pixel in the grayscale image of the detection item area based on the background mean, background variance, local mean, and local variance to extract the scotch tape area, and finally determines whether the scotch tape has a defect based on the area of ​​the scotch tape area. In this way, the embodiment of the present application solves the problem of low efficiency in scotch tape defect detection.

The invention discloses a preparation method of a thickness-controllable bismuth-strontium-calcium-copper-oxygen high-temperature superconducting single-crystal micron wire, and belongs to the technical field of preparation of superconducting micro-nano electronic devices. According to the method, a BSCCO single crystal is cleaved through a Scotch adhesive tape in a high-vacuum environment to obtain a fresh surface, a gold film is evaporated in situ, after a gold electrode is prepared through photoetching and wet etching, secondary photoetching is combined with argon ion beam etching to a preset depth, and a line channel with a micron-dimension width is defined; the sample and a second substrate are bonded and solidified through Epoxy glue, the substrates are separated to achieve turn-over transfer, finally, residual block BSCCO single crystals are cleaved and removed, and a finished product is obtained. According to the method, the in-situ gold electrode technology, the dry-wet etching technology and the turn-over transfer cleavage technology are combined, good ohmic contact is achieved, the thickness of the micron wire is accurately controlled, the process is stable and repeatable, and a new way is provided for preparation of high-performance high-temperature superconducting devices.

The present invention discloses a hafnium disulfide transistor with an indium protective layer and a preparation method thereof, wherein the transistor uses indium as a protective layer and hafnium disulfide as a channel. First, a hafnium disulfide layered material is peeled off from a hafnium disulfide block using 3M Scotch tape by mechanical stripping; then, the tape with the hafnium disulfide material attached is adhered to a sticky gel film, and an optical microscope is used to observe and select a two-dimensional layered material with appropriate thickness and uniform texture; then, it is transferred to a silicon / silicon dioxide substrate; and then a layer of indium is evaporated on the surface of the two-dimensional material as a protective layer using thermal evaporation technology, and a metal electrode is evaporated using a mask to prepare the transistor. The materials used in the present invention are safe, environmentally friendly, and low-cost. Not only are microelectronic devices with good optoelectronic properties obtained, but the channel material is also protected, thereby achieving the purpose of extending the life of the device.

The application discloses a preparation method of a controllable-thickness BiSrCaCuO high-temperature superconducting single-crystal microwire, and belongs to the technical field of superconducting micro-nano electronic device preparation. The application obtains a fresh surface by cleaving a BSCCO single crystal through a Scotch tape under a high-vacuum environment and evaporates a gold film in situ, and after gold electrodes are prepared through photolithography and wet etching, secondary photolithography and argon ion beam etching are combined to define a line channel with a width of micrometer level to a preset depth; then, the sample is bonded and solidified with a second substrate through an Epoxy glue, and the substrate is separated to realize a turn-over transfer, and finally, residual bulk BSCCO single crystals are cleaved and removed to obtain a finished product. The application combines in-situ gold electrode technology, dry and wet etching technology and turn-over transfer and cleaving technology, realizes a good ohmic contact, and is precise in microwire thickness control, stable and repeatable in process, and provides a new way for the preparation of high-performance high-temperature superconducting devices.