The invention discloses a preparation method of a thickness-controllable
bismuth-
strontium-
calcium-
copper-
oxygen high-temperature superconducting single-
crystal micron wire, and belongs to the technical field of preparation of superconducting micro-nano electronic devices. According to the method, a BSCCO
single crystal is cleaved through a Scotch
adhesive tape in a high-vacuum environment to obtain a fresh surface, a
gold film is evaporated in situ, after a gold
electrode is prepared through photoetching and wet
etching, secondary photoetching is combined with
argon ion beam
etching to a preset depth, and a line channel with a micron-dimension width is defined; the sample and a second substrate are bonded and solidified through
Epoxy glue, the substrates are separated to achieve turn-over transfer, finally, residual block BSCCO single crystals are cleaved and removed, and a finished product is obtained. According to the method, the in-situ gold
electrode technology, the dry-wet
etching technology and the turn-over transfer cleavage technology are combined, good
ohmic contact is achieved, the thickness of the micron wire is accurately controlled, the process is stable and repeatable, and a new way is provided for preparation of high-performance high-temperature superconducting devices.