Preparation method of controllable thickness bismuth strontium calcium copper oxide high-temperature superconducting single crystal microwire

Abstract

The application discloses a preparation method of a controllable-thickness BiSrCaCuO high-temperature superconducting single-crystal microwire, and belongs to the technical field of superconducting micro-nano electronic device preparation. The application obtains a fresh surface by cleaving a BSCCO single crystal through a Scotch tape under a high-vacuum environment and evaporates a gold film in situ, and after gold electrodes are prepared through photolithography and wet etching, secondary photolithography and argon ion beam etching are combined to define a line channel with a width of micrometer level to a preset depth; then, the sample is bonded and solidified with a second substrate through an Epoxy glue, and the substrate is separated to realize a turn-over transfer, and finally, residual bulk BSCCO single crystals are cleaved and removed to obtain a finished product. The application combines in-situ gold electrode technology, dry and wet etching technology and turn-over transfer and cleaving technology, realizes a good ohmic contact, and is precise in microwire thickness control, stable and repeatable in process, and provides a new way for the preparation of high-performance high-temperature superconducting devices.