Method for manufacturing sodium-doped absorbing layer on reel-to-reel flexible polyimide (PI) substrate

Abstract

The invention relates to a method for manufacturing a sodium-doped absorbing layer on a reel-to-reel flexible polyimide (PI) substrate. The method is characterized by comprising the steps of 1 performing preparation before work, 2 preparing Na-doped indium gallium selenide (IGS) film, 3 preparing a copper-rich copper indium gallium selenide (CIGS) film; and 4 preparing the sodium-doped absorbing layer on the reel-to-reel flexible PI substrate. The method adopts a vacuum evaporation technology, keeps a distance between evaporation sources and the PI substrate to be 300-400mm and adjusts tape transporting speed of the PI substrate to enable the PI substrate to be lower than 450 DEG C, elements evaporated by the evaporation sources can be compounded on a back electrode Mo of the PI substrate well, and the Na-doped IGS film with even thickness is formed on the back electrode Mo. Due to the fact that Na atoms diffuse and enter the crystal boundary position of the IGS film to form a deep energy level defect, a foundation is laid for fully even Na doping into a large-area absorbing layer and strengthening of adhesion of the absorbing layer, and the effects of improving open-circuit voltage and electrical property of batteries are played.

Description

technical field [0001] The invention belongs to the technical field of copper indium gallium selenide thin film solar cells, and in particular relates to a method for preparing a sodium-doped absorbing layer on a roll-to-roll flexible PI substrate. Background technique [0002] As the energy crisis becomes more and more serious, people pay more and more attention to renewable energy. Among them, solar energy has become the most potential technology because of its inexhaustibility, cleanliness and pollution-free. Silicon-based solar technology is currently the most mature and has the highest market share, but it is not the most ideal solar technology due to the high energy consumption and high pollution preparation process. In recent years, thin-film solar technology has begun to rise. Since thin-film batteries have the advantages of light weight, low cost, and easy installation, they have developed rapidly once they were proposed. Among them, copper indium gallium selenium...

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Problems solved by technology

[0005] At present, there are many methods for preparing the absorbing layer by artificial sodium doping, but the requirements for the high temperature resistance of the flexible substrate as the base are high, and the maximum temperature that the flexible PI substrate can withstand is about 480 ° C, especially When preparing the absorbing layer on the back electrode of the roll-to-roll flexible PI substrate, since the flexible PI substrate is in a moving state, the temperature of the flexible PI substrate will be relatively reduced during the movement process. layer will lead to sodium can not be completely uniformly mixed into the absorber layer, and the adhesion of the absorber layer on the back electrode will decrease, and the absorber layer will fall off easily, which will not only reduce the performance of the prepared copper indium gallium selenide thin film solar cell, but also affect its life

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