The invention relates to a method for manufacturing a
sodium-doped absorbing layer on a reel-to-reel flexible
polyimide (PI) substrate. The method is characterized by comprising the steps of 1 performing preparation before work, 2 preparing Na-doped
indium gallium selenide (IGS) film, 3 preparing a
copper-rich
copper indium gallium selenide (CIGS) film; and 4 preparing the
sodium-doped absorbing layer on the reel-to-reel flexible PI substrate. The method adopts a
vacuum evaporation technology, keeps a distance between
evaporation sources and the PI substrate to be 300-400mm and adjusts tape transporting speed of the PI substrate to enable the PI substrate to be lower than 450 DEG C, elements evaporated by the
evaporation sources can be compounded on a back
electrode Mo of the PI substrate well, and the Na-doped IGS film with even thickness is formed on the back
electrode Mo. Due to the fact that Na atoms diffuse and enter the
crystal boundary position of the IGS film to form a deep
energy level defect, a foundation is laid for fully even Na
doping into a large-area absorbing layer and strengthening of adhesion of the absorbing layer, and the effects of improving open-circuit
voltage and electrical property of batteries are played.