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Preparation method of sodium-doped molybdenum plane sputtering target material

A sputtering target material, sodium doping technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problems of low conversion efficiency and high cost of copper indium gallium selenide thin film, and achieve cost Low cost, high relative density, and the effect of improving conversion efficiency

Active Publication Date: 2013-06-19
亚芯半导体材料(江苏)有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing two-step sputtering method usually uses copper gallium or copper / gallium target and indium target as the back electrode, and the copper indium gallium selenium thin film produced has low conversion efficiency and high cost

Method used

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  • Preparation method of sodium-doped molybdenum plane sputtering target material

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Experimental program
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Effect test

Embodiment 1

[0023] Sodium-doped molybdenum planar sputtering target is composed of molybdenum atoms, sodium atoms and oxygen atoms, wherein the ratio of molybdenum atoms, sodium atoms and oxygen atoms is 85:5:10.

[0024] Its preparation method comprises the following steps:

[0025] (1) Molybdenum trioxide with a molar ratio of 1:1 and a purity of more than 99.99% and sodium hydroxide are reacted in water at 50°C to form an aqueous solution of sodium molybdate, and heated to 120°C to evaporate the aqueous solution of sodium molybdate to dryness to obtain Sodium molybdate;

[0026] (2) Precisely weigh anhydrous sodium molybdate and molybdenum powder so that the ratio of molybdenum atoms, sodium atoms and oxygen atoms is 85:5:10, mix them well, place them in a ball mill jar, and add balls, in which anhydrous molybdenum The ratio of the total mass of sodium bicarbonate and molybdenum powder to the total mass of balls added to the ball mill is 1:10, ball milled for 180min under the protecti...

Embodiment 2

[0030] Sodium-doped molybdenum planar sputtering target is composed of molybdenum atoms, sodium atoms and oxygen atoms, wherein the ratio of molybdenum atoms, sodium atoms and oxygen atoms is 91:3:6.

[0031] Its preparation method comprises the following steps:

[0032] (1) Molybdenum trioxide with a molar ratio of 1:2 and a purity of more than 99.99% is reacted with sodium hydroxide in water at 70°C to form an aqueous solution of sodium molybdate, which is heated to 100°C to evaporate the aqueous solution of sodium molybdate to dryness. Sodium molybdate;

[0033] (2) Precisely weigh anhydrous sodium molybdate and molybdenum powder so that the ratio of molybdenum atoms, sodium atoms and oxygen atoms is 91:3:6, mix them evenly, place them in a ball mill jar, and add balls, in which anhydrous molybdenum The ratio of the total mass of sodium bicarbonate and molybdenum powder to the total mass of balls added to the ball mill is 1:100, ball milled for 30 minutes under the protect...

Embodiment 3

[0037] Sodium-doped molybdenum planar sputtering target is composed of molybdenum atoms, sodium atoms and oxygen atoms, wherein the ratio of molybdenum atoms, sodium atoms and oxygen atoms is 99:1 / 3:2 / 3.

[0038] Its preparation method comprises the following steps:

[0039] (1) Molybdenum trioxide with a molar ratio of 1:3 and a purity of more than 99.99% is reacted with sodium hydroxide in water at 60°C to form an aqueous solution of sodium molybdate, which is heated to 110°C to evaporate the aqueous solution of sodium molybdate to dryness. Sodium molybdate;

[0040] (2) Precisely weigh anhydrous sodium molybdate and molybdenum powder so that the ratio of molybdenum atoms, sodium atoms and oxygen atoms is 99:1 / 3:2 / 3, mix them well, put them in a ball mill jar, and add balls, The ratio of the total mass of anhydrous sodium molybdate and molybdenum powder to the total mass of balls added to the ball mill is 1:50, ball milled for 100min under the protection of argon, and the r...

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Abstract

The invention provides a sodium-doped molybdenum plane sputtering target material. The sodium-doped molybdenum plane sputtering target material comprises molybdenum and sodium, wherein molybdenum atoms account for 90-99%, and the remaining is sodium atoms. The invention further provides a preparation method of the sodium-doped molybdenum plane sputtering target material. The sodium-doped molybdenum plane sputtering target material provided by the invention can greatly improve the conversion efficiency of a copper indium gallium selenium thin film battery, reduce production cost and realize large-scale industrialization of the copper indium gallium selenium thin film batteries by doping a sodium element in a molybdenum back electrode. According to the preparation method, molybdenum trioxide, sodium hydroxide and the molybdenum metal are taken as raw materials, and the sodium-doped molybdenum plane sputtering target material is prepared through reaction, ball milling, screening, hot pressing and other processes; the preparation method has the advantages of simple processes and low cost and is suitable for industrial production; and as for the prepared target material, the relative density is high and can be above 95%, the oxygen density is high and can achieve 250ppm, and the size is small and can achieve 60-100mu m.

Description

technical field [0001] The invention belongs to the field of solar energy application equipment, and in particular relates to a preparation method of a sodium-doped molybdenum planar sputtering target. Background technique [0002] Manufacturing of solar panels has expanded rapidly over the past few decades. In 2011, the growth rate of the solar energy industry in the United States was as high as 109%, which is second to none in the field of new energy technologies. Copper indium gallium selenide thin film solar cells are developing rapidly in the field of solar panels, which are usually provided with a molybdenum layer, copper indium gallium selenide thin film absorber layer, cadmium sulfide buffer layer, Intrinsic zinc oxide, aluminum-zinc oxide window layer and surface contact layer. According to the research report of Lux Research, in 2011, the CIGS thin-film solar energy market capacity reached 1.2GW, and will reach 2.3GW in 2015; 3% increased to 6% in 2015 and will ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/3414
Inventor 徐从康
Owner 亚芯半导体材料(江苏)有限公司
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