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Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials
InactiveUS20120018828A1High efficiencySimplifies doping processSolid-state devicesSemiconductor/solid-state device manufacturingSputter depositionAmount of substance
A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. A sputter deposition using a first target device comprising 4-12 wt % Na2SeO3 and 88-96 wt % copper-gallium species is used to form a first precursor with a first Cu / Ga composition ratio. A second precursor over the first precursor has copper species and gallium species deposited using a second target device with a second Cu / Ga composition ratio substantially equal to the first Cu / Ga composition ratio. A third precursor comprising indium material overlies the second precursor. The precursor layers are subjected to a thermal reaction with at least selenium species to cause formation of an absorber material comprising sodium species and a copper to indium-gallium atomic ratio of about 0.9.
Owner:CM MFG
P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
InactiveUS20070243328A1High concentrationImprove conductivityElectric discharge heatingVacuum evaporation coatingPulsed laser depositionLaser source
A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.
Owner:IMRA AMERICA
P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
InactiveUS7608308B2High concentrationImprove conductivityElectric discharge heatingVacuum evaporation coatingPulsed laser depositionLaser source
A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.
Owner:IMRA AMERICA
Preparation of graphene polyaniline modified carbon cloth electrode material, and method for accelerating acclimation of bio-anode
InactiveCN106941179AImprove transfer efficiencyLower resistanceTreatment by combined electrochemical biological processesCell electrodesModified carbonWastewater
The invention provides preparation of a graphene polyaniline modified carbon cloth electrode material, and a method for accelerating the acclimation of a bio-anode, and relates to electrode preparation and bio-anode acclimation. A purpose of the present invention is to solve the technical problem of poor electron transfer efficiency of existing bioelectrochemical anode. The graphene polyaniline modified carbon cloth electrode material preparation method comprises: loading graphene oxide onto a carbon cloth, immersing into a sodium borohydride solution, reducing, immersing into an aniline monomer solution, adding a curing agent solution in a dropwise manner, and polymerizing to obtain the graphene polyaniline modified carbon cloth electrode material. According to the present invention, with the application of the graphene polyaniline modified carbon cloth electrode material as the anode in the bioelectrochemical system reactor, the operation is performed after the starting until the output potential is stable so as to complete the acclimation; and the graphene polyaniline modified carbon cloth electrode material can be used in wastewater treatment.
Owner:HARBIN INST OF TECH
Method of forming nitrogen-doped single-walled carbon nanotubes
ActiveUS20070157348A1Simply and easily doped with nitrogenDoping process is simpleMaterial nanotechnologySolid-state devicesChemical reactionCarbon nanotube
A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an H2O or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the H2O or other plasma atmosphere.
Owner:SAMSUNG ELECTRONICS CO LTD
In chamber sodium doping process and system for large scale fabrication of CIGS based thin film photovoltaic materials
InactiveCN102168252ADoping process is simpleVacuum evaporation coatingSputtering coatingComposite filmIndium
The invention relates to in chamber sodium doping process and system for large scale fabrication of CIGS based thin film photovoltaic materials. A method of processing a photovoltaic materials using a sputtering process including providing at least one transparent substrate having an overlying first electrode layer. The method further including forming an overlying copper and gallium layer using a first sputtering process within a first chamber from a first target including a copper species and a gallium species. Additionally, the method includes forming an indium layer overlying the copper and the gallium layer using a second sputtering process within the first chamber from a second target including an indium species. The method further includes forming a sodium bearing layer overlying the indium layer using a third sputtering process within the first chamber, thereby forming a composite film including the copper and gallium layer, the indium layer, and the sodium bearing layer. Furthermore, the method includes subjecting the composite film to at least a thermal treatment process to form a chalcopyrite absorber layer comprising copper, indium, gallium, and sodium therein.
Owner:CM MFG
Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
InactiveUS8241943B1OptimizationAvoid undesired absorptionSemiconductor/solid-state device manufacturingPhotovoltaic energy generationIndiumGas phase
A method of sodium doping in fabricating CIGS / CIS based thin film solar cells includes providing a shaped substrate member. The method includes forming a barrier layer over the surface region followed by a first electrode layer, and then a sodium bearing layer. A precursor layer of copper, indium, and / or gallium materials having an atomic ratio of copper / group III species no greater than 1.0 is deposited over the sodium bearing layer. The method further includes transferring the shaped substrate member to a second chamber and subjecting it to a thermal treatment process within an environment comprising gas-phase selenium species, followed by an environment comprising gas-phase sulfur species with the selenium species being substantially removed to form an absorber layer.
Owner:CM MFG
Sodium doping method and system of cigs based materials using large scale batch processing
InactiveUS20110020978A1Simple processImprove efficiencyFinal product manufactureSemiconductor/solid-state device manufacturingThermal energyBatch processing
A method of processing a plurality of photovoltaic materials in a batch process includes providing at least one transparent substrate having an overlying first electrode layer and an overlying copper species based absorber precursor layer within an internal region of a furnace. The overlying copper species based absorber precursor layer has an exposed face. The method further includes disposing at least one soda lime glass comprising a soda lime glass face within the internal region of the furnace such that the soda lime glass face is adjacent by a spacing to the exposed face of the at least one transparent substrate. Furthermore, the method includes subjecting the at least one transparent substrate and the one soda lime glass to thermal energy to transfer one or more sodium bearing species from the soda lime glass face across the spacing into the copper species based absorber precursor layer via the exposed face.
Owner:CM MFG
Gradient sodium ion doped nickel cobalt lithium aluminate positive electrode material, preparation method and lithium battery
InactiveCN108630923ADoping process is simpleHigh crystallinityCell electrodesSecondary cellsLithium aluminateCobalt
The invention relates to a gradient sodium ion doped nickel cobalt lithium aluminate positive electrode material, a preparation method and a lithium battery. The nickel cobalt lithium aluminate positive electrode material is doped with sodium ions, and the sodium ion concentration gradually decreases from the surface to the inside of the positive electrode material. The preparation method comprises the following steps: weighing precursors Ni0.8Co0.15Al0.05(OH)2 and Li2CO3 according to a molar ratio of 1 to 0.5-0.55, adding NaCl with the mass fraction of 0.7-3wt%, thoroughly mixing the three uniformly, then raising the temperature of a material to 450 DEG C at a temperature raising rate of 3 DEG C / min in an oxygen atmosphere in a tubular furnace, pre-sintering for 6 hours, then raising thetemperature to 800-850 DEG C at a temperature raising rate of 3 DEG C / min, calcinating for 10-12 hours, and finally cooling to a room temperature to obtain the gradient Na<+> doped LiNi0.8Co0.15Al0.05O2. Through gradient doping, the structural stability of the material can be improved and relatively high capacity can be maintained, and further a high-nickel ternary positive electrode material withrelatively good cyclic stability is obtained.
Owner:NANKAI UNIV
Method for preparing element doped manganese dioxide electrode materials for super-capacitors
InactiveCN104392848AImprove surface propertiesImprove microstructureHybrid capacitor electrodesManganese oxides/hydroxidesCapacitanceReaction temperature
The invention discloses a method for preparing element doped manganese dioxide electrode materials for super-capacitors and belongs to the technical field of electrode materials. Particularly, the method comprises adding a borate solution and a divalent manganese salt solution into a potassium permanganate solution successively to be subjected to hydrothermal reaction, wherein the molar ratio between the divalent manganese salt and the potassium permanganate is 1: (0.5-5), the boron ion concentration is 0.001M-5M, the reaction temperature is in a range of 60 DEG C to 160 DEG C, and the reaction time is 1h-24h; washing reaction products with ethyl alcohol and de-ionized water respectively and performing vacuum drying on the washed reaction products for 4h to 24h in the temperature ranging from 60 DEG C to 120 DEG C. According to the method, the reaction condition is mild, the production cost is low, the technical route is simple and convenient, the activity and the specific capacity of the prepared manganese dioxide materials are high, the capacitive performance is good, and the cycling stability is high.
Owner:HANGZHOU DIANZI UNIV
Organic solid waste pretreatment system and process and corresponding organic solid waste continuous hydrothermal treatment system and process
ActiveCN111346897ASave heating energyReduce energy costsWaste processingSolid waste disposalProcess engineeringEnvironmental engineering
The invention discloses an organic solid waste pretreatment system and process and a corresponding organic solid waste continuous hydrothermal treatment system and process. The organic solid waste pretreatment system comprises a weight sorting-smashing device and a ball milling device; the water weight sorting-smashing device comprises a sorting cavity and a second-stage smashing unit, separationof light materials and heavy materials can be achieved through the sorting cavity, smashing the light materials by the second-stage smashing unit is carried out to prepare primary mud, the ball milling device receives the primary mud and carries out ball milling to prepare mud containing impurities, the heavy materials separated by the sorting cavity can enter the ball milling device to be used asabrasive materials. The organic solid waste pretreatment system is simple and reasonable in structure, facilitates separation of light and heavy materials and utilization of heavy material waste, refines, homogenizes and fluidizes organic solid waste, can achieve organic solid waste synergism, high efficiency and continuous hydrothermal treatment, effectively prevents continuous hydrothermal technology blockage and the like, fully recovers heat energy in the technological process, and improves the utilization rate of organic solid waste, resource utilization of products can be realized, and obvious environment-friendly and economic benefits are obtained.
Owner:TSINGHUA UNIV
Organic-amidine-molecule n-type dopant and application thereof in semiconductor photoelectric devices
ActiveCN107501269AAdjustable conductivityImprove performanceOrganic chemistrySolid-state devicesOrganic solar cellOrganic field-effect transistor
The invention discloses an organic-amidine-molecule n-type dopant and an application thereof in semiconductor photoelectric devices. The n-type dopant is of an organic amidine molecule and is mixed with a receptor material, or the receptor material is directly exposed in a steam atmosphere of the n-type dopant, and thus, the n doping of the receptor material is achieved. According to the organic-amidine-molecule n-type dopant and the application thereof in the semiconductor photoelectric devices, by adding the n-type dopant into an organic n-type semiconductor, properties such as electric conductivity, work function and electron mobility of the organic semiconductor can be regulated; and after the receptor material is subjected to n doping by the n-type dopant, the receptor material is applied to perovskite solar cells, organic solar cells, organic light emitting diodes and organic field effect transistors.
Owner:HUAZHONG UNIV OF SCI & TECH +1
High pressure resistant load leading-out end structure and sealing-in craft based on metal ceramic
InactiveCN103065858ASmall sizeIncrease the number ofSoldering apparatusAir-break switch detailsHigh pressureMaterials science
The invention discloses a high pressure resistant load leading-out end structure and a sealing-in craft based on metal ceramic. The high pressure resistant load leading-out end structure comprises insulators, leading-out rods and a base plate (7), wherein the insulators comprise four coil insulators (5) and at least four load insulators (6), the leading-out rods comprise at least four load leading-out rods (3) and four coil leading-out rods (4), the insulators are made of ceramic materials, the coil leading-out rods (4) are symmetrically distributed in the center of the base plate (7), the at least four load leading-out rods (3) are symmetrically distributed on two sides of an X axis of the base plate (7), the leading-out rods are arranged on the base plate (7) in a sleeved and sealed mode through the insulators, two ends of each leading-out rod are respectively higher than two ends of each insulator, and the two ends of each insulator are higher than the base plate (7).
Owner:CHINA AEROSPACE TIMES ELECTRONICS CORP
Preparation of aluminum doped zinc oxide nano-wire
InactiveCN101372356ASuitable for industrial productionReproducibleZinc oxides/hydroxidesAluminum doped zinc oxideRoom temperature
A method for preparing an aluminum-doped zinc oxide nanowire belongs to the field of photoelectric information functional materials. In the method, zinc powder and aluminum powder are taken as an evaporator source, and adjacently put in an aluminum oxide boat; the washed silicon wafer is put at a position 1-2mm vertical distance from and over the evaporator source, and then the boat is put in a horizontal tubular furnace which is heated to 800-850 DEG C and heat is preserved for 45-60min; in the whole growth process, argon is consecutively introduced into the furnace chamber at the flow rate of 40-50ml / min, when the growth is completed, the tubular furnace naturally cools to room temperature, and then the silicon wafer is taken out with the surface sedimented with the aluminum-doped zinc oxide nanowire. The method can synthesize the aluminum-doped zinc oxide nano-wire with the diameter of 40-370nm and the length of 30-150mum under the normal pressure without any vacuum equipment; in addition, the synthesis temperature is low, which greatly lowers the production cost.
Owner:UNIV OF SCI & TECH BEIJING
Cathode active material for a lithium ion capacitor, and method for producing the cathode active material
ActiveUS20130188294A1Improved charge/discharge capacitanceIncrease energy densityNon-metal conductorsHybrid capacitor electrodesCapacitanceHigh energy
The present invention relates to a lithium ion capacitor having excellent capacitance characteristics and high energy density. More particularly, the present invention relates to a cathode active material for a lithium ion capacitor, which utilizes a lithium composite metal oxide having a large initial irreversible capacitance as a specific cathode additive in addition to a carbon-based material applied as a cathode active material, and a production method thereof, and a lithium ion capacitor including the same.According to the present invention, lithium can be electrochemically doped on an anode without using metal lithium, and the capacitance characteristics of a lithium ion capacitor and the safety of a lithium-doping process can be significantly improved.
Owner:KOREA ELECTRONICS TECH INST
Low resistance monocrystalline silicon doping method
PendingCN108588816AImprove conversion efficiencyFully contactedPolycrystalline material growthBy pulling from meltSilicon alloySeparation coefficient
The invention discloses a low-resistance monocrystalline silicon doping method, which comprises the following steps of: firstly, preparing a low-resistance gallium-boron-silicon alloy material by using a low-resistance gallium material and a low-resistance boron material, then adding the low-resistance gallium-boron-silicon alloy material into a silicon material, and then carrying out vacuum pumping, seeding, necking and shouldering for better meeting the production of low resistance monocrystalline silicon. The specific resistance of the monocrystalline silicon is 0.5-1.5 omega centimeter, and the photoelectric conversion efficiency of the monocrystalline silicon solar cell is improved to 21.71%; without affecting anti-attenuation ability of the monocrystalline, the method solves the problem of uneven distribution of the specific resistance of monocrystalline due to low gallium separation coefficient, both the utilization rate of the raw materials and qualified rate of the low-resistance monocrystalline silicon products are improved, and the waste is reduced.
Owner:SHANDONG DAHAI NEW ENERGY DEV
Sodium doping method and system of CIGS based materials using large scale batch processing
InactiveUS7964434B2Improve efficiencyDoping process is simpleFinal product manufactureSemiconductor/solid-state device manufacturingThermal energyBatch processing
A method of processing a plurality of photovoltaic materials in a batch process includes providing at least one transparent substrate having an overlying first electrode layer and an overlying copper species based absorber precursor layer within an internal region of a furnace. The overlying copper species based absorber precursor layer has an exposed face. The method further includes disposing at least one soda lime glass comprising a soda lime glass face within the internal region of the furnace such that the soda lime glass face is adjacent by a spacing to the exposed face of the at least one transparent substrate. Furthermore, the method includes subjecting the at least one transparent substrate and the one soda lime glass to thermal energy to transfer one or more sodium bearing species from the soda lime glass face across the spacing into the copper species based absorber precursor layer via the exposed face.
Owner:CM MFG
(NH4) 2TiF6 doped boryl hydrogen storage material and preparation method thereof
ActiveCN104724672ALow priceDoping process is simpleHydrogen productionPtru catalystPhysical chemistry
The invention relates to a novel (NH4) 2TiF6-LiBH4 composite hydrogen storage material prepared through carrying out complexing and catalyzing on LiBH4 by taking (NH4) 2TiF6 as a complexing agent and a catalyst, which belongs to the field of material invention. The composite material is prepared by using a mechanical ball milling method, when the doping content of (NH4)2TiF6 is 1-20 wt%, the initial dehydrogenation temperature of the material is reduced to 65 DEG C, constant-temperature dehydrogenation is performed at the temperature of 90 DEG C, and the dehydrogenation amount in 160 minutes reaches 3.9 wt %, and the dehydrogenation activation energy of the material is also reduced. The composite hydrogen storage material prepared by ball milling according to the invention has a good dehydrogenation performance, and due to the doping of (NH4) 2TiF6 as a complexing agent and a catalyst, the LiBH4 efficient hydrogen storage material is improved to show a good dehydrogenation performance at a low temperature.
Owner:GUILIN UNIV OF ELECTRONIC TECH
Polyaniline/barium titanate composite material, preparation method and application
The invention discloses a preparation method of a polyaniline / barium titanate composite material. The invention adopts solution polymerization in-situ composite method, takes ammonium persulfate as oxidant and sulfuric acid as dopant to prepare polyaniline / barium titanate composite material with different composite proportion. The method has the advantages of simple preparation process, strong operability, short experimental period, and can improve the capacitive properties of pure polyaniline, and has a broad application prospect in the electrode materials of supercapacitors.
Owner:DALIAN JIAOTONG UNIVERSITY
Preparation method of stretchable fluorescent color-changing material
ActiveCN113072800ABroaden the fieldEasy to manufactureOrganic chemistryTenebresent compositionsFluorescencePhenazine
Owner:EAST CHINA UNIV OF SCI & TECH
Method for preparing ONO medium layer
ActiveCN104465353AImprove thickness uniformityDoping process is simpleSemiconductor/solid-state device manufacturingSemiconductor devicesGeneration processSilicon oxide
The invention relates to the field of semiconductor preparation, in particular to a method for preparing an ONO medium layer. The method is suitable for a nonvolatile NOR flash memorizer. The method includes the following steps of firstly, providing a silicon wafer, wherein a surface tunneling oxide layer and a floating gate layer formed at a preset position are sequentially arranged on a substrate of the silicon wafer; secondly, inputting first preset reaction gas through an in-situ vapor generation process, and forming bottom layer silicon oxide on the upper face of the floating gate layer; thirdly, inputting second preset reaction gas through a porous quartz tube, and forming silicon nitride on the upper side of the bottom layer silicon oxide through deposition; fourthly, inputting the first preset reaction gas through the in-situ vapor generation process, and oxidizing the surface of the silicon nitride to form top layer silicon oxide. The method has the advantages that the thickness uniformity of a thin film depositing on the surface of the silicon wafer is effectively improved, shells produced by the silicon wafer is remarkably reduced, N type dopes are not prone to being formed on contact faces of the silicon oxide and the silicon wafer, realizability is high, and the method can be widely applied to various deposition processes.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
Preparation method of metal-doped lithium iron phosphate
PendingCN111186828AHigh volumetric energy density and cycle performanceGood machinability and magnification performanceCell electrodesSecondary cellsPhosphoric acidOrganosolv
The invention discloses a preparation method of metal-doped lithium iron phosphate. The preparation method comprises the following steps: mixing an iron source, a phosphorus source and hydrogen peroxide to obtain a flocculent precipitate, and carrying out filtering, washing and drying successively to obtain a precursor; dispersing a lithium source and a reducing agent into an organic solvent, adding the precursor to prepare a suspension, stirring the suspension, and conducting centrifuging, washing and vacuum drying successively to obtain an off-white precipitate; uniformly mixing the off-white precipitate with a doping metal source, and carrying out annealing to obtain a spherical lithium iron phosphate positive electrode material. The crystallization degree of the material is controlledby controlling a molar ratio of raw materials, sintering temperature and heat preservation time, so a final product has good rate capability and cycle performance.
Owner:KUNMING UNIV OF SCI & TECH
Method for preparing doped and modified lithium ferrous phosphate positive material of lithium battery
The invention relates to a method for preparing a doped and modified lithium ferrous phosphate positive material of a lithium battery and belongs to the technology of the positive material of a lithium ion battery. The particle diameter of ferric phosphate prepared by using a precipitation method is small; the particle size of a lithium ferrous phosphate material prepared from the self-made ferric phosphate is nanoscale; and an ion-doped phosphate group compound prepared by using the precipitation method is fine and small in particle size, and thus the phosphate group compound can be uniformly mixed with the ferric phosphate, the follow-up full reaction is facilitated and the doping effect is improved; a solid state sintering method is adopted as the basis, the commercial application is convenient, and the doping technology is simple and practical; and a prepared LiFe(1-x)MxPO4(0(x(0.05)) material has excellent electrochemical performances, and the first discharge capacity under 1C multiplying power is not lower than 140mAh / g.
Owner:DONGFANG ELECTRIC CORP LTD
Multi-luminous-region luminous Ag, Ga and N doping ZnO film and preparation method of multi-luminous-region luminous Ag, Ga and N doping ZnO film
InactiveCN102605317AHigh luminous intensityHigh doping contentVacuum evaporation coatingSputtering coatingSputteringVacuum pumping
The invention provides a multi-luminous-region luminous Ag, Ga and N doping ZnO film and a preparation method of the multi-luminous-region luminous Ag, Ga and N doping ZnO film and relates to a ZnO film and a preparation method of the ZnO film. The invention aims at solving the technical problems of few luminous regions and weak luminous intensity of the existing single-doping ZnO film. The multi-luminous-region luminous Ag, Ga and N doping ZnO film provided by the invention is characterized in that a layer of Ag, Ga and N co-doping ZnO film is sputtered on a substrate. A method comprises the following steps that: ZnO powder and Ga2O3 powder are subjected to hot pressing to become ceramic sheets, and then, Ag is pasted to obtain target materials; the target materials and the substrate are placed into a radio frequency magnetron sputtering film coating machine, a sputtering chamber is subjected to vacuum pumping, then, mixed gas of N2 and O2 is introduced into the sputtering chamber, the film is obtained through the sputtering, the film is subjected to annealing, and then, the multi-luminous-region luminous Ag, Ga and N doping ZnO film is obtained. The film can be luminous respectively in an ultraviolet light region, a purple light region and a red orange light region and can be used in the field of photoelectric devices.
Owner:HARBIN INST OF TECH
Battery based on fluorine doped graphene nanosheets
InactiveCN108963251ADoping process is simpleServe as a modelCell electrodesHydrofluoric acidDoped graphene
The invention discloses a battery based on fluorine doped graphene nanosheets. A preparation method comprises following steps: reduced oxidized graphene is uniformly dispersed in ethanol, hydrofluoricacid is added, an obtained mixture is introduced into a reaction vessel, and is heated to 120 to 180 DEG C for reaction; after reaction, an obtained product is cooled to a room temperature ranging from 20 to 25 DEG C through natural cooling so as to obtain the fluorine doped graphene nanosheets taking -CF2 as a main component, and the fluorine doped graphene nanosheets is taken as an anode material in assembling of the battery. The reduced oxidized graphene, hydrofluoric acid, and the like are taken as raw materials, the raw materials are cheap and easily available; the graphene doping technology is simple; large scale production can be realized; and electrical properties are improved obviously.
Owner:TIANJIN UNIV
Method of forming nitrogen-doped single-walled carbon nanotubes
ActiveUS7713509B2Simply and easily doped with nitrogenDoping process is simpleMaterial nanotechnologySolid-state devicesChemical reactionSingle-Walled Nanotube
Owner:SAMSUNG ELECTRONICS CO LTD
Polymer solar cell and method for preparing same
InactiveUS20140251430A1Improve corrosion resistanceReadily availableFinal product manufactureSolid-state devicesActive polymerDopant
The present invention relates to a polymer solar cell and a method for preparing the same. The cell comprises a conductive anode substrate, a hole buffer layer, an active polymer layer, an electron buffer layer and a cathode laminated in succession, wherein the hole buffer layer comprises a metal compound host and a guest doped in the metal compound host, the metal compound host being one selected from ZnO, ZnS and CdS and the doped gust being one selected from Li2CO3, Li2O, LiF, LiCl and LiBr. By doping a lithium compound with few electrons as a dopant into the metal compound host, a p-type doped layer facilitating the hole transportation is formed in the polymer solar cell. The dopant and the metal compound host have stable properties and would not corrode the conductive anode substrate, facilitating industrial production in the future and effectively improving the energy conversion efficiency of the polymer solar cell.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD
Method and device for preparing rare earth doped gallium nitride light-emitting film
InactiveCN100594255CBind and extend motion trajectoriesLow deposition temperatureVacuum evaporation coatingSputtering coatingDielectricRare earth
The invention discloses a preparing method of gallium nitride luminous film doped by rare earth, which is characterized by the following: controlling the substrate temperature within 0-500 Deg C; adopting nitrogen or composite gas of nitrogen and argon as splashing gas; proceeding magnetic control splashing for metal gallium of doped rare earth powder in the vacuum; sedimenting rare earth doped gallium nitride luminous film on the substrate of target position. The invention also provides magnetic control splashing device to prepare the product, which contains vacuum chamber; the rotary substrate rack with substrate and 3-5 magnetic targets are set in the vacuum chamber; the magnetic control target is set on the substrate, which makes substrate bottom parallel the magnetic control target; each magnetic control target connects DC anode directly; the cooling chamber is set in the magnetic control target, which possesses cooling dielectric inlet an outlet.
Owner:WUHAN UNIV
Method for separation and purification of zeaxanthin from capsanthin
Belonging to the technical field of carotenoid preparation, the invention discloses a method for separation and purification of zeaxanthin from capsanthin. The method is characterized by including thepreparation steps of: subjecting capsanthin, alcohol, alkali and an antioxidant to saponification reaction; adjusting the pH value of the saponification product to 7-8, performing diluting a n-hexane-acetone-ethyl acetate mixed solution, carrying out desorption, and collecting a zeaxanthin desorption solution; recovering the solvent, and conducting cooling and crystallizing; and carrying out filtering, washing and drying to obtain zeaxanthin crystals. The method provided by the invention directly adopts capsanthin as the raw material, performs saponification treatment to obtain a zeaxanthin monomer, and then separate zeaxanthin with a content of 90% or above. The product is convenient for large-scale production.
Owner:山东天音生物科技有限公司
Metal catalytic reactor, preparation of metal catalytic reactor and application of metal catalytic reactor in preparation of synthesis gas by reforming natural gas and CO2 dry gas
PendingCN114768746ASimple processMild conditionsHydrogenHydrogen/synthetic gas productionSyngasNatural gas
The invention relates to a metal catalytic reactor as well as preparation and application thereof in preparation of synthesis gas by reforming natural gas and CO2 dry gas, a contact surface of a metal tube and a reaction raw material is coated and doped with a catalyst active component, a catalytic dopant thin layer is formed on the contact surface of the metal tube and the reaction raw material, and the metal catalytic reactor is obtained. The metal reactor is used for reforming reaction of natural gas and CO2 dry gas, and can realize efficient conversion of methane and carbon dioxide, high catalyst stability and low carbon deposition generation. According to the invention, the conversion rate of methane is 80-96%; the conversion rate of carbon dioxide is 80-98%; the selectivity of carbon monoxide is greater than 99%; cO / H2 = 1; and carbon deposition is low. The method has the characteristics of long catalyst service life, high methane conversion rate and product selectivity, low carbon deposition, no need of catalyst amplification, small industrialization difficulty, easy product separation, good process repeatability, safe and reliable operation and the like, and has a wide industrial application prospect.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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