Preparation of aluminum doped zinc oxide nano-wire

An aluminum-doped zinc oxide and nanowire technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of limiting the use range of the film, reducing the performance of the film, and high cost of ITO, achieving low cost, simple equipment, and wide application range. Effect

Inactive Publication Date: 2009-02-25
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Currently the most mature TCO is In 2 o 3 : Sn(ITO), its target material preparation and film forming process have been perfected, and it is in the stage of industrial production, but this material has the following disadvantages: (1) The price of In in ITO is expensive, resulting in relatively high cost of ITO ; (2) The higher substrate temperature is required in the preparation process of ITO film, which limits the scope of use of the film; (3) In in the ITO film is easily reduced in hydrogen-containing plasma, which reduces the performance of the film
Tang Bin and others synthesized ZAO nanowire arrays by vapor deposition method [Tang Bin, Deng Hong, Shui Zhengwei, Wei Min, Chen Jinju, Hao Xin, Research on Photoluminescence Properties of AlZnO-doped Nanowire Arrays, Acta Physica Sinica, 56( 2007) 5176-9], but the preparation methods that have been reported either have a lot of procedures, or the synthesis temperature is relatively high (1400 ° C), and complex vacuum equipment is used

Method used

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  • Preparation of aluminum doped zinc oxide nano-wire
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  • Preparation of aluminum doped zinc oxide nano-wire

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1. Use a silicon wafer as the receiving substrate, and clean the silicon wafer in alcohol and acetone respectively.

[0020] 2. Use Zn powder and Al powder as the evaporation source, and place them adjacent to each other in an aluminum oxide boat; place the cleaned silicon wafer directly above the evaporation source, with a vertical distance of 1 mm from the source, and then place the boat in a horizontal in a tube furnace.

[0021] 3. Heat the tube furnace to 800°C and keep it warm for 45 minutes. During the whole growth process, the furnace chamber was always filled with 40ml / min argon. After the growth, the tube furnace was naturally cooled to room temperature. The sample was taken out, and Al-doped ZnO nanowires were deposited on the surface of the silicon wafer.

[0022] The scanning electron microscope results of the product are as follows figure 1 As shown, the product consists of nanowires. The diameter of the nanowire is 40-370 nm, and the length is 30-150...

Embodiment 2

[0024] 1. Use a silicon wafer as the receiving substrate, and clean the silicon wafer in alcohol and acetone respectively.

[0025] 2. Use Zn powder and Al powder as the evaporation source, and place them adjacent to each other in an aluminum oxide boat; place the cleaned silicon wafer directly above the evaporation source, with a vertical distance of 1 mm from the source, and then place the boat in a horizontal in a tube furnace.

[0026] 3. Heat the tube furnace to 810°C and keep it warm for 50 minutes. During the whole growth process, the furnace chamber was always filled with 50ml / min argon. After the growth, the tube furnace was naturally cooled to room temperature. The sample was taken out, and Al-doped ZnO nanowires were deposited on the surface of the silicon wafer. The doping content of Al in the Al-doped ZnO nanowires is 2 at.%.

Embodiment 3

[0028] 1. Use a silicon wafer as the receiving substrate, and clean the silicon wafer in alcohol and acetone respectively.

[0029] 2. Use Zn powder and Al powder as the evaporation source, and place them adjacent to each other in an aluminum oxide boat; place the cleaned silicon wafer directly above the evaporation source, with a vertical distance of 2 mm from the source, and then place the boat in a horizontal in a tube furnace.

[0030] 3. Heat the tube furnace to 850°C and keep it warm for 60 minutes. During the whole growth process, the furnace chamber was always filled with 50ml / min argon. After the growth, the tube furnace was naturally cooled to room temperature. The sample was taken out, and Al-doped ZnO nanowires were deposited on the surface of the silicon wafer. The doping content of Al in the Al-doped ZnO nanowires is 7 at.%.

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Abstract

A method for preparing an aluminum-doped zinc oxide nanowire belongs to the field of photoelectric information functional materials. In the method, zinc powder and aluminum powder are taken as an evaporator source, and adjacently put in an aluminum oxide boat; the washed silicon wafer is put at a position 1-2mm vertical distance from and over the evaporator source, and then the boat is put in a horizontal tubular furnace which is heated to 800-850 DEG C and heat is preserved for 45-60min; in the whole growth process, argon is consecutively introduced into the furnace chamber at the flow rate of 40-50ml/min, when the growth is completed, the tubular furnace naturally cools to room temperature, and then the silicon wafer is taken out with the surface sedimented with the aluminum-doped zinc oxide nanowire. The method can synthesize the aluminum-doped zinc oxide nano-wire with the diameter of 40-370nm and the length of 30-150mum under the normal pressure without any vacuum equipment; in addition, the synthesis temperature is low, which greatly lowers the production cost.

Description

technical field [0001] The invention belongs to the field of photoelectric information functional materials, and relates to a preparation method of a zinc oxide nanometer material doped by a vapor deposition method. Background technique [0002] Due to its unique optical and electrical properties, transparent conductive oxide semiconductor thin films (TCO) have been used in many fields, such as piezoelectric transducers, photoelectric displays, solar cells, gas sensors, and optical waveguides. Currently the most mature TCO is In 2 o 3 : Sn(ITO), its target material preparation and film forming process have been perfected, and it is in the stage of industrial production, but this material has the following disadvantages: (1) The price of In in ITO is expensive, resulting in relatively high cost of ITO ; (2) The higher substrate temperature is required in the preparation process of ITO film, which limits the scope of use of the film; (3) In in the ITO film is easily reduced ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
Inventor 常永勤郑超崔兴达
Owner UNIV OF SCI & TECH BEIJING
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