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Molybdenum film containing sodium and preparation method and application thereof

A molybdenum layer and content technology, applied in the field of sodium-containing molybdenum film and its preparation, can solve problems such as dependence, and achieve a wide range of applications

Inactive Publication Date: 2014-06-18
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, high-efficiency CIGS cells are sputtered on SLG glass, and at high growth temperature (about 600°C), sodium diffuses from the glass into the CIGS film through the molybdenum back electrode, which makes the efficiency of the solar cell great depends on the quality of the molybdenum back electrode to a certain extent, but the molybdenum back electrode in the prior art cannot meet such requirements

Method used

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  • Molybdenum film containing sodium and preparation method and application thereof
  • Molybdenum film containing sodium and preparation method and application thereof
  • Molybdenum film containing sodium and preparation method and application thereof

Examples

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Embodiment 1

[0026] A layer of pure molybdenum film with a thickness of 800nm ​​is sputtered on the glass substrate by DC magnetron sputtering method. The film adopts a laminated structure, the sputtering power is 180W, the sputtering pressure is 8mTorr for 4min, and the sputtering pressure is 5mTorr for 36min; then DC magnetron sputtering is used to deposit a layer of sodium-molybdenum film with a thickness of 80nm. The sodium-molybdenum target has a Na content of 10%[at], a Mo content of 90%[at], a target diameter of 50.8mm, and a thickness of 6.35mm. The sputtering power used is 100W, the sputtering pressure is 100W, and the sputtering time is 10min; Then sputter a layer of pure molybdenum film with a thickness of 100nm. The Mo content of the molybdenum target used for sputtering is 99.95%[at], the target diameter is 50.8mm, and the thickness is 3.175mm. The molybdenum film adopts a laminated structure, and the sputtering power used 180W, sputtering gas pressure 5mTorr deposition 5min. ...

Embodiment 2

[0029] A layer of pure molybdenum film with a thickness of 800nm ​​is sputtered on the glass substrate by DC magnetron sputtering method. The molybdenum film adopts a stacked structure, the sputtering power is 180W, and the sputtering pressure is 8mTorr for 4min and 5mTorr. Deposit for 36 minutes; then use DC magnetron sputtering to deposit a layer of 80nm thick sodium-containing molybdenum film. The power is 100W, the sputtering pressure is 100W, and the sputtering time is 10min; then a layer of pure molybdenum film with a thickness of 100nm is sputtered. After 5 minutes, a sodium-molybdenum film was obtained. Then, a CuGa / In prefabricated layer structure is prepared by magnetron sputtering on the sodium-containing molybdenum film, and selenized in an annealing furnace to obtain a copper indium gallium selenide thin film.

[0030] By using X-ray diffraction (XRD) to analyze its crystal structure, such as crystal form, crystal orientation, crystal grain stress and other cryst...

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Abstract

The invention discloses a molybdenum film containing sodium and a preparation method and application of the molybdenum film containing sodium. The molybdenum film containing sodium sequentially comprises a first pure-molybdenum layer, a molybdenum layer containing sodium, a second pure-molybdenum layer and a substrate from top to bottom, wherein the first pure-molybdenum layer is 10 nanometers to 1 micron thick, the molybdenum layer containing sodium is 10 nanometers to 1 micron thick, the second pure-molybdenum layer is 100 nanometers to 2 microns thick, the sodium content of the molybdenum layer containing sodium ranges from 1% [at] to 20% [at], the molybdenum content of the molybdenum layer containing sodium ranges from 80% [at] to 99% [at], and the molybdenum content of each pure-molybdenum layer ranges from 99.9% [at] to 99.9999% [at]. Compared with the prior art, the adhesion, the electrical conductivity and other respects of the molybdenum film containing sodium meet the requirements of a copper indium gallium selenide film solar cell, and the molybdenum film containing sodium can be used for manufacturing of the high-quality copper indium gallium selenide film solar cell. By the adoption of the preparation method of the molybdenum film containing sodium, the sodium-doped molybdenum film containing an appropriate amount of sodium can be prepared, and it is guaranteed that the positive influence of the doping amount of sodium on the efficiency of the copper indium gallium selenide film solar cell is maximized relatively. The prepared molybdenum film containing sodium is wide in application range and can be prepared based on common substrates of the copper indium gallium selenide film solar cell made of glass or PI or stainless steel or ceramic or the like.

Description

technical field [0001] The invention specifically relates to a sodium-molybdenum film and its preparation method and application. Background technique [0002] After entering the 21st century, human society is facing a more severe energy situation. The reserves of traditional fossil energy represented by oil and coal are decreasing day by day, while the environmental pollution and other problems caused by them are becoming more and more serious. Human society is looking for safe, clean and efficient energy. The need for alternative energy sources is imminent. Among the various types of new energy with rapid development, solar energy has become an important member of the new energy industry due to its advantages of safety, pollution-free, inexhaustible, and not subject to geographical restrictions, and is bound to become the main source of mankind in the near future. An irreplaceable piece in the energy landscape. [0003] Among them, copper indium gallium selenide (CIGS) s...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18H01L21/203
CPCH01L31/022425H01L31/03923H01L31/0749Y02E10/541Y02P70/50
Inventor 张风燕张然陈文志吴洁阳
Owner XIAMEN UNIV
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