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GaSe nano-material, liquid phase stripping method and application of method

A technology of nanomaterials and liquid phase exfoliation, applied in the field of two-dimensional materials, can solve the problems of high time and equipment requirements, and achieve the effect of low cost, uniform dispersion and clear shape

Active Publication Date: 2021-01-26
NORTHWEST UNIV(CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the defects of the existing liquid phase exfoliation preparation method and the problems of long time in the preparation process and high equipment requirements, the present invention discloses a GaSe nanomaterial, a liquid phase exfoliation method and its application, including mixing gallium selenide and isopropyl ketone to obtain Mix the solution, place the mixed solution in a water bath, obtain an initial dispersion after ultrasonic dispersion, add isopropanone to the initial dispersion and place it in a water bath, separate the supernatant and perform a second ultrasonic Disperse, separate and take the supernatant to dry

Method used

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  • GaSe nano-material, liquid phase stripping method and application of method
  • GaSe nano-material, liquid phase stripping method and application of method
  • GaSe nano-material, liquid phase stripping method and application of method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Step 1: Prepare 50 mg of GaSe with a purity of 99.995%.

[0050] Step 2: Weigh 2ml of IPA with a purity of 99.7% and put it into a transparent glass dispensing bottle, add the GaSe weighed in Step 1 into the IPA solution, and seal the glass bottle.

[0051] Step 3: Place the sealed glass bottle in an ultrasonic equipment with a power of 300W and a frequency of 40kHz in a water bath for 3-4 hours, keep the bath temperature at 25°C, and carry out ultrasonic dispersion. The speed of ultrasonic dispersion is 8000-10000rpm, and finally the initial dispersion is obtained liquid.

[0052] Step 4: Add 2 ml of IPA isopropanone to the initial dispersion liquid, place it in a water bath, centrifuge at a speed of 10,000 rpm for 3 min, and separate the supernatant for use.

[0053] Step 5: Put the supernatant separated in step 4 into an ultrasonic equipment with a power of 300W and a frequency of 40kHz in a water bath for 2 hours, keep the bath temperature at 25°C, and then centrif...

example 1

[0054] The optical spectrum of the used GaSe granular material of example one is as figure 1 As shown, the obtained Raman spectrum is shown as Figure 9 shown;

[0055]Optical photographs of the resulting GaSe nanomaterials as figure 2 As shown, the Raman spectrum is as Figure 10 As shown, the AFM spectrum is as Figure 18 shown;

[0056] figure 1 and figure 2 It shows that the thickness of the obtained product is thicker, the shape is irregular sheet, and the yield is more.

[0057] Figure 9 , Figure 10 and Figure 18 It shows that the obtained product is a GaSe nanomaterial and the thickness of its single layer is thinned to 8.727nm. According to the literature (Tang Luping. CVD preparation of gallium selenide nanostructure and research on its photoelectric properties [D].), it can be judged that the number of layers is 8-9 layer, the resulting flakes piled up severely.

Embodiment 2

[0059] Step 1: Same as Embodiment 1.

[0060] Step 2: Same as Embodiment 1.

[0061] Step 3: Place the sealed glass bottle in a water bath for 3-4 hours in an ultrasonic device with a power of 300W and a frequency of 40kHz, and keep the bath temperature at 35°C.

[0062] Step 4: Same as Embodiment 1.

[0063] Step 5: Put the supernatant separated in step 4 into an ultrasonic equipment with a power of 300W and a frequency of 40kHz in a water bath for 2 hours, keep the bath temperature at 35°C, and then centrifuge the dispersion at 10,000 rpm for 3 minutes to separate the supernatant liquid.

[0064] The color of the supernatant obtained from the reaction is lighter than that in Example 1.

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Abstract

The invention discloses a GaSe nano-material, a liquid phase stripping method and application of the method. The liquid phase stripping method comprises the steps that gallium selenide and isopropyl-ketone are mixed to obtain a mixed solution, the mixed solution is placed in a water bath, ultrasonic dispersion is conducted to obtain initial dispersion liquid, isopropyl-ketone is added into the initial dispersion liquid, the mixture is placed in the water bath, separating is conducted to obtain supernatant, secondary ultrasonic dispersion is conducted, separating is conducted to obtain supernatant, and drying is conducted to obtain the product. The thickness of the GaSe nano-material can be controlled by adjusting the experiment temperature or the centrifugal rotating speed, no template isneeded in the process of preparing materials with different thicknesses, the process is simple, the cost is low, the prepared two-dimensional GaSe nano-material is large in number, uniform in dispersion and uniform in thickness, and the GaSe nano-material with different thicknesses can be prepared by controlling different experiment conditions according to needs.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, and relates to a GaSe nanometer material, a liquid phase stripping method and an application thereof. Background technique [0002] Group III-VI chalcogenides (MX; M = Ga, In; X = S, Se, Te) are a new class of semiconducting layered two-dimensional (2D) materials. Gallium selenide (GaSe) is a representative compound of this new type of semiconductor layered compound. Gallium selenide is a p-type material, and the crystals show a layered hexagonal structure. Gallium selenide has strong in-plane covalent bonds and weak out-of-plane van der Waals interactions, high carrier mobility, suitable optical bandgap, nonlinear optical properties and photoresponse characteristics, so in solar cells, nonlinear optics , Hertz generators, high-speed electronic devices and other fields have broad application prospects. [0003] Multilayer GaSe is a direct bandgap semiconductor (2.1eV), and single-layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00B82Y40/00
CPCC01B19/007B82Y40/00C01P2002/82C01P2004/02C01P2004/04C01P2004/20C01P2006/80Y02P70/50
Inventor 张志勇高虹齐晓斐曲瑞郭昱希邹雷登赵武王雪文赵丽丽
Owner NORTHWEST UNIV(CN)
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