Method for determining optimal doping ratio of nonlinear gallium selenide crystal

A gallium selenide, nonlinear technology, applied in the field of technical physics, can solve the problem of low accuracy

Inactive Publication Date: 2012-08-15
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0010] The purpose of the present invention is to solve the problem of low accuracy of existing methods for determining the optimal doping ratio of nonlinear gallium selenide crystals, and provide a method for determining the optimal doping ratio of nonlinear gallium selenide crystals

Method used

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  • Method for determining optimal doping ratio of nonlinear gallium selenide crystal
  • Method for determining optimal doping ratio of nonlinear gallium selenide crystal
  • Method for determining optimal doping ratio of nonlinear gallium selenide crystal

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Embodiment 1

[0031] 1. Doping 0.05%, 0.1%, 0.5% and 1% Te, and 0.5%, 1%, 2%, 3%, 5%, 7%, and 10% S in the GaSe crystal respectively, and the doped GaSe crystal rods, pure GaSe or doped GaSe crystals are grown in a rotating thermal field to obtain single crystals, the vertical temperature gradient of the crystal plane is 10°C / cm, and the crystal growth rate is 10mm / day;

[0032] 2. Use an electron probe microanalyzer to measure the actual doping ratio of the single crystal obtained in step 1. Through the test, the doping ratio of the crystal sample is as follows: S element 0.45%, 0.92%, 1.95%, 2.96%, 4.96% , 6.97%, 10%; Te element: 0.01%, 0.07%, 0.38%, 0.67%;

[0033] 3. Use a scanning spectrophotometer to measure the excitonic absorption line of the crystal obtained in step 1. The model is Cary-100, produced by Varian, Australia: the wavelength range is between 190-900nm, the spectral resolution is 0.2-4nm, and the wavelength deviation ± 1nm;

[0034] 4. According to the absorption coeff...

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Abstract

The invention discloses a method for determining optimal doping ratio of nonlinear gallium selenide crystal, which belongs to the field of technique physics and solves the problem of low accuracy of the traditional method for determining the optimal doping ratio of nonlinear gallium selenide crystal. According to the method, the spectral quality of a laser absorption spectrum is adopted to determine the optimal doping ratio of the equivalent element of the GaSe crystal; and when the ratio of an exciton absorption coefficient peak value to a trough value is maximum, an exciton absorption spectral line is narrowest or the slope in the long wave direction of the exciton absorption spectral line is maximum, the doping ratio is determined to be optimal. The accuracy of the method is determined by a PFC (power factor correction) device, and a result proves that the conversion efficiency is highest when the crystal with the optimal doping ratio is adopted.

Description

technical field [0001] The invention belongs to the field of technical physics, and in particular relates to a method for determining the optimum doping ratio of a nonlinear gallium selenide crystal. Background technique [0002] The nonlinear layered crystal gallium selenide (ε-GaSe) has quite high optical quality and can be widely used in laser frequency conversion (PFC). However, the mechanical properties of GaSe crystals limit its application: the Mohs hardness is almost 0, and the layered structure is very easy to cleave. The layered structure of GaSe causes many defects on the crystal surface, such as microcrystals of four-atom units and stacking faults. Microcrystals on the surface of GaSe crystals and point defects during conventional growth inside will reduce their optical quality. At the same time, due to the layered structure and low mechanical hardness of GaSe crystal, GaSe crystal cannot be cut and surface polished, and its natural cleavage plane can only be u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31
Inventor 谢冀江张来明姜可陈飞高飞郭劲
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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