17 results about "Gallium antimonide" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses a method for growing a gallium oxide film by using a gallium antimonide metal source, which comprises the following steps of: growing a gallium oxide epitaxial film by using gallium antimonide as a gallium metal source, oxygen as an oxygen source and argon as carrier gas through a low-pressure gas-phase chemical reaction; the sublimation temperature of gallium antimonide is low, and gallium antimonide participates in the reaction as a metal source, so that the temperature of the vapor-phase growth gallium oxide epitaxial film can be effectively reduced; the gallium oxide epitaxial film grown by the method is good in crystallinity and compact in surface, the growth time can be effectively shortened through a low-temperature low-pressure gas phase reaction technology, the production cost is saved, and commercial application is facilitated.

The invention belongs to the technical field of semiconductor material characterization, and relates to an antimonide material carrier concentration detection method. The method comprises the following steps: growing a first antimony-containing compound material layer on a conductive gallium antimonide substrate; performing an electrochemical capacitance-voltage test on the first antimony-containing compound material layer to obtain a first carrier concentration value; growing a second antimony-containing compound material layer on the semi-insulating gallium arsenide substrate; performing a Hall effect test on the second antimony-containing compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimony-containing compound material layer on one side, far away from the substrate, of the first antimony-containing compound material layer and / or the second antimony-containing compound material layer, and performing electrochemical capacitance-voltage test on each antimony-containing compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimony-containing compound material layer based on the carrier concentration value and the carrier concentration correction factor.

The utility model discloses a kind of gallium antimonide reaction mixing devices, including receiving sleeve frame, receiving sleeve frame inside fixed sleeve is connected with receiving reaction bucket, the fixed pipe fitting is rotatably connected between the inner wall both sides of receiving reaction bucket, the fixed pipe fitting both ends are all through receiving reaction bucket and extend to receiving reaction bucket outside, the fixed pipe fitting both ends are rotatably connected with fixed branch pipe.The utility model, by fixed motor drives second synchronous wheel to rotate, then second synchronous wheel drives first synchronous wheel to rotate by synchronous toothed belt, then first synchronous wheel also drives the fixed stirring frame on fixed pipe fitting also rotates, so that fixed stirring frame further stirs and mixes reaction to raw material and additive, and improves mixing reaction quality.

This invention provides a method for processing gallium antimonide wafers, comprising: S1, cleaning the gallium antimonide wafer after slicing and cleaning to remove the cutting fluid from the surface; S2, rinsing the surface of the gallium antimonide wafer and drying it; S3, cleaning the gallium antimonide wafer with etching solution A, which is composed of an alkaline substance and an oxide; S4, cleaning the gallium antimonide wafer with etching solution B, which is composed of an acidic solution and a buffer solution; S5, rinsing the surface of the gallium antimonide wafer and drying it; S6, observing the surface of the gallium antimonide wafer under fluorescent light and marking the twin distribution. The processing method of this invention exhibits high selective etching stability, good repeatability, and controllable etching rate. The twin positions of the wafer after etching are clear and can be easily identified, thereby improving the accuracy and efficiency of wafer splitting.

The invention discloses a high-purity gallium antimonide synthesis device, and belongs to the technical field of gallium antimonide production. In the antimony and gallium synthesis process, a motor works to drive a driving disc to rotate, a sliding rod is driven to rotate in the driving disc rotating process, and meanwhile the sliding rod can horizontally move left and right in the driving disc; the sliding rod drives the sliding sleeve to slide up and down outside the sliding column, the sliding sleeve pushes the sliding column to swing with the supporting shaft as the center in the up-down moving process, the sliding column drives the rotating disc to swing through the two lug plates and the supporting shaft, the rectangular block is clamped in a limiting groove in the bottom of the quartz tube, and the rotating disc drives the quartz tube above to rotate in a reciprocating mode through the rectangular block. The quartz tube drives the deflection seat above to rotate synchronously, antimony and gallium in a melt can be in full contact through reciprocating rotation of the quartz tube, local component segregation is avoided, the uniformity of a synthetic reaction is ensured, segregation caused by gravity can be restrained through forced convection generated through reciprocating rotation, component distribution is more uniform, and the quality of a final product is ensured.

The invention provides an anti-interface diffusion face-down welding structure and method for a gallium antimonide-based infrared detector, and belongs to the technical field of infrared detectors. The problem that in the prior art, mutual diffusion of antimony and solder atoms in a high-temperature process is difficult to effectively restrain is solved. The structure comprises a gallium antimonide-based infrared detector chip and a readout circuit, an electrode bonding pad of the gallium antimonide-based infrared detector chip and an electrode bonding pad of the readout circuit are in flip interconnection through a metal interconnection column, and an adhesion layer, a composite barrier layer and a weldable layer are arranged between the metal interconnection column and the electrode bonding pad of the gallium antimonide-based infrared detector chip. A metal lamination layer is arranged between the metal interconnection column and an electrode bonding pad of the reading circuit, and the composite barrier layer is formed by alternately laminating at least one refractory metal nitride layer and at least one pure metal barrier layer; according to the invention, the interface reaction can be effectively blocked, the interface stability is maintained, and the practicability of the gallium antimonide infrared detector can be promoted.

The application belongs to the field of semiconductor substrate manufacturing, and discloses a cleaning process of a gallium antimonide wafer. The process comprises the following steps: placing a polished and waxed wafer in hot concentrated sulfuric acid and then in cold concentrated sulfuric acid for immersion treatment; placing the wafer in S1 cleaning solution for cleaning treatment, wherein the S1 cleaning solution is a tetramethylammonium hydroxide solution; placing the wafer in S2 cleaning solution for cleaning treatment, wherein the S2 cleaning solution is a mixture of hydrofluoric acid, hydrochloric acid and water; placing the wafer in S3 cleaning solution for cleaning treatment, wherein the S3 cleaning solution is a mixture of nitric acid and water; placing the wafer in S4 cleaning solution for cleaning treatment, wherein the S4 cleaning solution is hydrogen peroxide; placing the wafer in S5 cleaning solution for cleaning treatment, wherein the S5 cleaning solution is a mixture of phosphoric acid and water; placing the wafer in S6 cleaning solution for cleaning treatment, wherein the S6 cleaning solution is a mixture of sulfuric acid and water; and drying. The cleaning process can improve the yield of products and reduce production costs.

This invention belongs to the field of semiconductor materials and discloses a processing technology for the reuse of gallium antimonide seed crystals. The processing technology includes: grinding and cleaning the gallium antimonide seed crystal, then immersing the gallium antimonide seed crystal in a first etching solution and a second etching solution sequentially, followed by cleaning and drying. Through a synergistic process of mechanical grinding, ultrasonic hydrolysis, chemical passivation, and selective etching, contaminants are thoroughly removed while protecting the seed crystal itself.

The invention discloses a method for epitaxial growth of a gallium antimonide film crystal on the surface of gallium arsenide, and belongs to the technical field of synthesis of compound semiconductor materials. The method comprises the following steps: step 1, placing a gallium arsenide substrate wafer on a bracket in a crystal reaction furnace, and vacuumizing the crystal reaction furnace; 2, conveying argon to a crystal reaction furnace, and replacing air; step 3, conveying antimonane to a crystal reaction furnace, and driving argon in a furnace body with antimonane steam; 4, trimethyl gallium is conveyed to a crystal reaction furnace; step 5, heating the crystal reaction furnace to 480-500 DEG C, and reacting for 0.5-3 hours at the temperature of 480-500 DEG C; then raising the temperature to 850 to 870 DEG C, and reacting for 1 to 1.5 hours at the temperature; and step 6, gradually reducing the temperature of the crystal reaction furnace to room temperature, and taking out a product to obtain an epitaxial gallium antimonide thin film crystal finished product. According to the invention, the gallium antimonide crystal epitaxial layer with uniform thickness and good quality can be obtained on the gallium arsenide substrate at a low temperature in a short time.

A gallium antimonide crystal growth apparatus and method are provided. The gallium antimonide crystal growth apparatus includes a liquid sealant replenishment mechanism, which replenishes a corresponding amount of NaCl+KCl liquid sealant melt as the gallium antimonide crystal is grown using the liquid-sealed Czochralski method. The gallium antimonide crystal growth method includes the following steps: loading gallium antimonide polycrystalline material, dopant, and liquid sealant into a crystal growth crucible; loading the NaCl+KCl solid liquid sealant particles into a feed crucible; evacuating, degassing, and leak checking; purging the furnace with nitrogen; heating; after the temperature stabilizes, crystal growth begins; as the crystal grows, the flow switch is adjusted to continuously replenish the liquid sealant in the feed crucible into the crystal growth crucible; after crystal growth is completed, the crystal growth crucible begins a cooling process until cooling is complete, at which point the feed crucible stops replenishing the crystal growth crucible with liquid sealant; evacuating and injecting air, then opening the furnace and cutting off the crystal rod.

The invention relates to the technical field of semiconductor materials, and particularly discloses a non-damage cleaning method for a gallium antimonide wafer. According to the cleaning method, the gallium antimonide wafer is sequentially placed in an organic solvent, a weak acid solution and a sulfur passivation solution for immersion cleaning, after immersion cleaning is finished, deionized water rinsing and drying treatment are conducted, and the gallium antimonide wafer with the clean surface and no damage is obtained. According to the method, organic pollutants on the surface of the wafer are removed through ultrasonic cleaning of the organic solvent, then a loose oxide layer on the surface of the wafer is stripped through immersion cleaning of the weak acid solution, and finally passivation modification is conducted on the surface of the wafer by means of the sulfur passivation solution. And finally, the gallium antimonide wafer with excellent surface flatness, controllable thickness of a primary oxide layer and stable long-term oxidation resistance is prepared, and the technical defects of serious erosion, low surface flatness, thick oxide layer, easiness in secondary oxidation and the like in an existing gallium antimonide wafer cleaning process are overcome.

This invention relates to the field of GaSb polycrystalline synthesis and purification technology, and discloses a method for synthesizing and purifying gallium antimonide (GaSb) polycrystalline. The method includes first placing Ga and Sb elements into a boron nitride boat, then placing the boron nitride boat into a quartz tube for high-temperature synthesis, followed by melting the quartz tube using a cutting mechanism, installing a sealing mechanism at both ends of the quartz tube using a driving mechanism, performing zone melting purification, and finally removing the GaSb polycrystalline and boron nitride boat. This invention utilizes a heating chamber and a semi-circular plate to form a complete tubular structure. A lifting assembly drives the semi-circular plate to send the quartz tube to a height coaxial with the driving mechanism, cutting mechanism, and sealing mechanism, followed by cutting and secondary sealing. This achieves a fully enclosed operation from GaSb polycrystalline synthesis, quartz tube melting, secondary sealing to zone melting purification, without interrupting the protective state to remove the polycrystalline, completely avoiding external contamination of the polycrystalline by oxygen, moisture, dust, etc., in the operating environment, and ensuring the crystal integrity and stoichiometry of the GaSb polycrystalline.

The application provides a gallium antimonide seed crystal cutting method, comprising: if the deviation between the accurate angle of crystallographic orientation and the preset standard cutting direction is greater than the preset tolerance threshold, generating an instruction that the crystal needs to be reoriented; if the deviation is less than or equal to the tolerance threshold, outputting the accurate angle as a cutting reference direction; for each path point on the initial cutting track, applying finite element analysis based on crystal elastic mechanics parameters to simulate and calculate the stress distribution and stress concentration coefficient of the point during the cutting process; integrating all local optimization results to generate a final overall cutting path file, which contains the sequence of tool head spatial coordinates, feed speed and cutting depth information; synchronously transmitting the final cutting path file and the cutting reference direction data to a numerical control cutting system to drive an execution mechanism to complete the cutting operation of the gallium antimonide seed crystal.

The invention discloses a low-defect gallium antimonide single crystal growth system capable of inhibiting antimony volatilization. The system comprises a PBN crucible, a quartz cap, a quartz growth tube, an upper heating area, a lower heating area, an outer heat preservation layer, a heat preservation cover, a quartz growth tube supporting piece, a quartz growth tube lifting device, an upper supporting plate, a lower supporting plate and a shell. The lower heating area is annularly fixed on the lower supporting plate; the lower slender pipe is positioned on the inner side of the lower heating area; the antimony volatilization inhibitor is arranged at the bottom of the lower slender tube of the quartz growth tube; the method comprises the steps that a crystal growth quartz tube is located in two temperature fields, an upper area heating device is used for crystal growth, a lower area heating device is used for heating an antimony volatilization inhibitor, antimony steam is conveyed to a crystal growth area, a certain pressure is kept, antimony element volatilization in gallium antimonide melt is inhibited, and the crystal growth quartz tube is obtained. The plurality of heating units enable the temperature gradient of a crystal growth area to be 2-8 DEG C / cm, so that the thermal stress and defect density of the gallium antimonide crystal in the growth process are reduced.

The invention discloses a gallium antimonide polycrystal synthesis method and device, and relates to the technical field of semiconductor material synthesis. According to the method, the second open container is arranged in the quartz ampoule tube, high-purity antimony is filled in the second open container to serve as an antimony compensation source, and the second open container and the first open container serving as a main reaction container are arranged at an interval; the method comprises the following steps: firstly, heating an antimony compensation source to create a controllable antimony-rich gas phase environment in a closed quartz ampoule tube, then heating high-purity gallium and high-purity antimony in a first open container to a liquid state, carrying out an exothermic synthesis reaction on molten gallium and antimony to generate gallium antimonide, and in the reaction process of generating the gallium antimonide, carrying out an exothermic synthesis reaction on the high-purity gallium and the high-purity antimony to generate the gallium antimonide. The antimony-rich gas phase environment can effectively inhibit and compensate volatilization loss of antimony, and the unbalance of the stoichiometric ratio of gallium antimonide is avoided; the synthesis method of the gallium antimonide polycrystal is low in energy consumption, high in raw material utilization rate and accurate in stoichiometric ratio of the product.

The application belongs to the technical field of semiconductor material characterization, and relates to a carrier concentration detection method for antimonide materials, which comprises the following steps: growing a first antimonide compound material layer on a conductive gallium antimonide substrate; performing electrochemical capacitance-voltage testing on the first antimonide compound material layer to obtain a first carrier concentration value; growing a second antimonide compound material layer on a semi-insulating gallium arsenide substrate; performing Hall effect testing on the second antimonide compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimonide compound material layer on the side, away from the substrate, of the first antimonide compound material layer and / or the second antimonide compound material layer; performing electrochemical capacitance-voltage testing on each antimonide compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimonide compound material layer based on the carrier concentration value and the carrier concentration correction factor.