Polishing method for gallium antimonide single crystal wafer

A single wafer, gallium antimonide technology, applied in the polishing field of gallium antimonide single wafer, can solve the problems of difficulty in processing high-quality polished wafers, difficult control of the chemical effect of gallium antimonide, high brittleness of gallium antimonide materials, etc. To achieve the effect of small surface damage, easy operation and easy cleaning

Active Publication Date: 2016-11-02
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Application Information

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Problems solved by technology

[0003] The application of gallium antimonide depends on the development of its polishing technology. Because the chemical properties of gallium antimonide are very active and the surface is easily oxidized, th

Method used

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Embodiment

[0016] The first step of rough polishing: the rough polishing uses a cerium oxide polishing pad, the polishing liquid contains aluminum oxide abrasives with a particle size of W1, and the polishing pressure is 160 g / cm 2 , the rotation speed is 30 rpm, and the flow rate of the polishing solution is 30 mL / min. The polishing liquid used for rough polishing is made by mixing the following components by weight percentage: W1 alumina abrasive 25%; grinding aid 6.5%; dispersant 4.5%; deionized water 64%.

[0017] The second step is polishing: the middle polishing uses a black polyurethane polishing pad, the polishing liquid contains silica nano-abrasives with a particle size of 75 nm and the oxidizing agent sodium hypochlorite, and the polishing pressure is 120 g / cm 2 , the rotational speed is 85 rpm, and the flow rate of the polishing solution is 20 mL / min. The polishing liquid used in polishing is made by mixing the following components by weight percentage: particle size is 20% ...

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PUM

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Abstract

The invention discloses a polishing method for a gallium antimonide single crystal wafer. For coarse polishing, a cerium oxide polishing pad is adopted, and polishing liquid contains aluminum oxide abrasives with the particle size of W1, at the pressure of 100 to 200 g/cm<2>, the rotating speed of 10 to 40 r/min and the flow of 10 to 50 mL/min; for medium polishing, a black polyurethane polishing pad is adopted, and the polishing liquid contains silicon dioxide nano abrasives with the particle size of 60 to 100 nm and an oxidant, i.e., sodium hypochlorite, at the pressure of 80 to 150 g/cm<2>, the rotating speed of 60 to 100 r/min and the flow of 10 to 30 mL/min; for fine polishing, a black synthesized leather polishing cloth is adopted, and the polishing liquid is abrasive-free polishing liquid, at the pressure of 30 to 100 g/cm<2>, the rotating speed of 20 to 60 r/min and the flow of 5 to 10 mL/min. The polishing process is simple and easy to operate; the gallium antimonide single crystal wafer is low in surface damage and easy to clean, and the surface roughness is 0.3 nm.

Description

technical field [0001] The invention relates to the processing of semiconductor materials, in particular to a polishing method for gallium antimonide single wafer. Background technique [0002] GaSb is a versatile III-V semiconductor material. The heterojunction between GaSb and other semiconductor materials is used in near-infrared lasers, light-emitting diodes, air pollution detectors, thermal-optical devices, and wavelength ranges of 2-5 and 8-14μm. It shows a good application prospect on the photodetector. In addition, the lattice constant of GaSb makes it very suitable as the epitaxial growth surface of AlGaIn, AsSb and other ternary or quaternary III-V semiconductors and other superlattice structures. [0003] The application of gallium antimonide depends on the development of its polishing technology. Because the chemical properties of gallium antimonide are very active and the surface is easily oxidized, the chemical action of gallium antimonide is quite difficult t...

Claims

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Application Information

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IPC IPC(8): B24B1/00B24B37/04
CPCB24B1/00B24B37/042B24B37/044
Inventor 高飞李晖徐世海张颖武练小正张弛王磊徐永宽程红娟
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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