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This invention discloses a method for preparing a single-component InP polishing slurry, belonging to the technical field of polishing slurry. The polishing slurry comprises the following components by mass percentage: 1%–20% modified colloidal silica, 0.01%–5% oxidant, 0.001%–1% metal corrosion inhibitor, 0.001%–0.6% surfactant, with the balance being a pH adjuster and deionized water; the pH adjuster is used to adjust the pH of the polishing slurry to 2.0–5.0. The modified colloidal silica is obtained by surface grafting modification of ordinary colloidal silica with a specific bisphosphonate-sulfonylimide silane coupling agent. The bisphosphonate groups in this structure can strongly chelate the InP surface, enhancing chemical cutting and improving the removal rate; the sulfonylimide groups ionize to provide a high negative charge, which, in synergy with steric hindrance, endows the polishing slurry with excellent long-term storage stability. This invention provides a ready-to-use, highly stable, high-removal-rate, and ultra-smooth surface-forming single-component polishing slurry.