Substrate diffusion and furbishing process

An effect of N reducing cost, improving performance, and simple and feasible polishing process

Inactive Publication Date: 2003-12-31
衡阳科晶微电子有限公司
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To solve the shortcomings of VDMOS transistors made of single crystals of specifications such as P, N, and P

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] NSubstrate diffusion and polishing process. It includes the following steps:

[0012] 1. Phosphorus pre-diffusion: It is to deposit a certain amount of phosphorus atoms on the surface of the silicon wafer under certain temperature and oxygen and nitrogen atmosphere conditions;

[0013] 2. Phosphorus main diffusion: Under certain temperature and oxygen and nitrogen atmosphere conditions, the junction depth can reach the required value through high temperature diffusion to meet the performance requirements of the device;

[0014] 3. Grinding wafer: using mechanical grinding method to control the thickness and surface of the silicon wafer after main expansion;

[0015] 4. Polishing: Use a polishing liquid to polish away the damage layer on the surface of the silicon wafer after the grinding wafer, and the mirror surface with good shape layer;

[0016] 5. Cleaning: Use a mixture of electronic cleaning fluid and water to clean the polished silicon wafer to remove impurities and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a N100 substrate diffusion and furbishing process, comprising phosphor pre-diffusion, phosphor primary diffusion, and using the single crystal sheet to make VDMOS tube. The process improves the product performance as well as reduces the cost for making, the diffusion and furbishing process is simple and applicable.

Description

Technical field [0001] The invention relates to a substrate diffusion and polishing process for manufacturing a VDMOS tube by using a single crystal silicon wafer, especially a N<100> substrate diffusion and polishing process. Background technique [0002] At present, the single crystals used to make VDMOS tubes are P<100>, N<111>, P<111>. There are three specifications and models, and the use of single crystals of these specifications and models to manufacture VDMOS tubes has the problem of difficulty in improving product performance and high manufacturing costs. At the same time, when the single crystals of these specifications and models are polished by chemical and mechanical polishing processes, there are also disadvantages of complex processes. Summary of the invention [0003] The purpose of the present invention is to provide a substrate diffusion and polishing process for manufacturing a VDMOS tube wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/225H01L21/304
Inventor 刘桂芝符孝权梁晓玲邓泳梅
Owner 衡阳科晶微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap