Mechanical-type chip clamping-pressing device for vacuum plasma technology

Abstract

The invention discloses a mechanical-type chip clamping-pressing device for vacuum plasma technology. The mechanical-type chip clamping-pressing device for the vacuum plasma technology comprises a chip substrate, an electrode, ceramic pressure rings, pressure ring connecting rods, a connecting rod support, a permanent magnet group, a drive motor and a motor support, wherein the chip substrate is positioned on the electrode, the ceramic pressure rings are arranged above the chip substrate and are connected with the connecting rod support through the pressure ring connecting rods, the permanent magnet group comprises a first group of permanent magnets and a second group of permanent magnets, wherein the first group of permanent magnets and the second group of permanent magnets are arranged in a corresponding mode are in magnetic coupling with each other, the first group of permanent magnets is fixedly connected with the connecting rod support, and the second group of permanent magnets is fixed on the drive motor which is movably connected with the motor support. The mechanical-type chip clamping-pressing device for the vacuum plasma technology can overcome the technical defect that an mechanical-type chip clamping-pressing device in the prior art can not be compatible with chip substrates with different thicknesses and surface evenness, is reliable in using, can reduce and eliminate instantaneous impact force generated by the ceramic pressure rings to the chip substrate when the ceramic pressure rings are contacted with the surface of the chip substrate, reduces the probability that the surface of the chip substrate is damaged or cracked, and improves production efficiency.

Description

technical field [0001] The invention relates to a mechanical chip clamping device for vacuum plasma technology, belonging to the technical field of vacuum plasma technology. Background technique [0002] In the manufacturing process of semiconductor chips and other types of microelectronic chips, plasma technology, especially plasma etching technology and vapor phase film growth technology, are widely used. Plasma etching is to locally and selectively remove substances on the surface of the substrate material; vapor phase film growth is to locally and selectively grow new substances on the substrate surface. To achieve this local selectivity, it is necessary to use a mask covering the surface of the substrate to produce precise pattern transfer, so that some areas on the substrate surface are covered and some areas are exposed. There are generally three types of substrate materials involved: elemental semiconductors (such as silicon, germanium, etc.), compound semiconductor...

AI Technical Summary

Problems solved by technology

Wafer substrate materials tend to be relatively brittle, and this instantaneous impact is likely to cause surface damage or rupture of the wafer substrate

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