27 results about "Indium antimonide" patented technology

This application relates to a method and product for preparing indium antimonide heterostructures that can reduce annealing thermal stress, belonging to the field of indium antimonide heterostructure manufacturing technology. The method includes: providing a donor indium antimonide substrate; forming an ion implantation layer, a weakening layer, and a residual substrate layer by ion implantation; providing a carrier indium antimonide substrate; depositing an Al2O3 passivation layer on the surfaces of the carrier indium antimonide substrate and the donor indium antimonide substrate; further depositing a SiO2 layer on the carrier indium antimonide substrate; bonding the SiO2 layer on the carrier indium antimonide substrate to the Al2O3 passivation layer on the donor indium antimonide substrate; annealing at a low temperature of ≤200℃ for 10~20h; peeling off the donor indium antimonide substrate; providing a SiC / Si substrate; bonding the peeled surface of the ion implantation layer to the SiC / Si substrate; and wet etching using BOE / DHF etching solution to obtain the heterostructure wafer.

This invention relates to a highly efficient automated splicing system for indium antimonide short crystal rods, belonging to the field of semiconductor material processing technology. Specifically, it relates to a highly efficient bonding and slicing technology for multiple short crystal rods of indium antimonide, indium phosphide, and other materials. The system includes a crystal rod conveying unit, a crystal orientation and size measurement unit, a splicing planning module, a buffer plate selection and adhesive application unit, and a crystal rod posture adjustment and bonding unit. This system achieves full automation from crystal rod loading to long rod assembly unloading. One operator can simultaneously manage three machines, requiring only periodic material replenishment; this reduces labor requirements by more than 80% compared to traditional manual splicing.

The invention discloses an indium antimonide-based thermoelectric alloy, the chemical formula of the indium antimonide-based thermoelectric alloy is InSb1-xBix, x is 0.02-0.05, the invention also discloses a preparation method, and the preparation method comprises the following steps: (1) weighing alloy raw materials indium particles and antimony particles according to a molar ratio of 1: 1.01-1: 1.03, adding bismuth powder according to a molar ratio of x: 1 to indium, and uniformly mixing the indium particles, the antimony particles and the bismuth powder; through reasonable doping of bismuth, the alloy has high conductivity, high Seebeck coefficient and low thermal conductivity, and the thermoelectric performance of the alloy is improved.

The application discloses a kind of based on indium antimonide-medium composite super surface cascade active magneto-optical terahertz non-reciprocal deflection device, belong to novel artificial electromagnetic material and terahertz science and technology field.The application will combine indium antimonide, medium super surface and wave plate, and cascade two-layer structure, realize the multi-degree-of-freedom control and scanning of light beam.Different static magnetic field is applied by electromagnet, so that indium antimonide produces Faraday optical rotation effect to incident terahertz wave, to control the polarization angle of wave plate, further realize the spin state of incident to geometric phase super surface.Different deflection effects are produced to different spin states by geometric phase super surface.By the combination of the above-mentioned device, the application can realize the deflection of dynamic light beam, finally realize the active deflection device of terahertz in 0.4~0.55THz range, and the deflection angle range can reach 42° to 67.8°.And, due to the time reversal symmetry breaking introduced by magnetic field, the device also has non-reciprocity, protects the stability of system.The application has the advantages of active adjustable, integrable, good stability, etc., and has good application prospect in terahertz communication, radar and imaging fields.

The invention discloses a self-powered remote intelligent power distribution current continuous monitoring terminal system, and relates to the technical field of current monitoring. According to the invention, through a self-energy-supply design and a multifunctional monitoring structure, accurate and continuous monitoring of the current of the distribution cable is realized. The alternating-current and direct-current characteristics of a cable to be tested are utilized, electric energy is collected and stored through magnetic field induction, an indium antimonide plate and a wind power and solar power generation module, and self-powered operation of equipment is guaranteed. The arc-shaped cover and the power generation paddle structure generate power and dissipate heat through the airflow pressure difference, the resistance sliding rod monitors airflow changes to detect blockage of the exhaust port, and the maintenance efficiency is optimized. The clamping mechanism ensures stable installation of the cable, and the external generator adapts to a low-wind-speed environment.

The invention discloses a preparation method of indium antimonide. 100 gt; the invention discloses a wafer dislocation detection method and dislocation corrosive liquid, and relates to the technical field of semiconductor material defect detection. The dislocation etchant is obtained by mixing hydrofluoric acid, hydrogen peroxide and deionized water according to the volume ratio of 1: (1.2-1.8): (4-5), and the dislocation etchant is used for indium antimonide. 100 gt; when the wafer is corroded, regular and clear dislocation corrosion pits which are easy to identify can be shown, so that the indium antimonide lt can be identified; 100 gt; the dislocation number and density of the wafer are detected, and indium antimonide lt is detected; 100 gt; and an effective guarantee is provided for the production quality control of the wafer and the reliability of downstream devices.

The application provides a chiral metamaterial absorber for multifunctional sensing and a preparation method thereof, and relates to the technical field of optics.The absorber comprises a periodically arranged three-dimensional double-layer unit structure, each unit structure sequentially comprises a Z-shaped chiral metal layer and a temperature-sensitive semiconductor layer from top to bottom; the material of the Z-shaped chiral metal layer is gold; the material of the temperature-sensitive semiconductor layer is indium antimonide, the dielectric constant of which dynamically changes with temperature, thereby realizing active regulation of circular dichroism in the terahertz wave band.The application realizes strong chiral selective absorption in the terahertz wave band through the periodic three-dimensional structure of the Z-shaped chiral metal layer and the temperature-sensitive semiconductor layer, and has high-sensitivity temperature sensing at 300K-360K and a wide-range refractive index of 1.0-2.0, and high-quality factor guarantees efficient integrated functions.

The present invention relates to a surface cleaning method for an indium antimonide wafer with a (111) crystal orientation. The surface of the wafer is pre-cleaned with a solution containing a surfactant, and after rinsing, the wafer is immersed in a mixed solution of hydrogen peroxide, ammonia and water for etching; the wafer is then immersed in a dilute sulfuric acid solution containing ozone for cleaning. The etching with the mixed solution and the cleaning with the dilute sulfuric acid solution containing ozone achieve a better surface cleaning effect, thereby better reducing the particle density on the wafer surface, reducing metal residue and achieving uniform oxidation.

The present invention relates to a method for the production of InSb colloidal quantum dots comprising the steps of: a) providing a reaction solution comprising a solvent and a single-source precursor; and b) heating the reaction solution to a reaction temperature for a reaction period such that the single-source precursor thermally decomposes to form InSb colloidal quantum dots, wherein the single-source precursor is selected from InSb adducts, InSb oligomers, and combinations thereof.

An annealing method of an indium antimonide wafer includes the steps of: S1, growing an undoped Te InSb crystal by a pulling method, the carrier concentration of the InSb crystal being 2E14 / cm 3 The following InSb crystal; S2, slicing the InSb crystal as an InSb wafer; S3, grinding and polishing the InSb wafer; S4, adding a mixed solution of ethanol and tellurium tetrachloride into a flask through a grinding mouth of the flask, the mass fraction of the tellurium tetrachloride in the mixed solution being 1-5%, and the other grinding mouth of the flask being used for installing a recondensation device; S5, putting the ground and polished InSb wafer into the mixed solution in the flask through the grinding mouth and completely immersing the InSb wafer in the mixed solution; S6, installing the recondensation device on the corresponding grinding mouth of the flask and plugging the other grinding mouth of the flask; S7, heating the mixed solution in the flask to 60-70 DEG C and annealing for 10-20 hours in a recondensation mode, and completing the annealing. Thus, the doping uniformity of the indium antimonide wafer is improved, and the problem of uneven stripes of the manufactured InSb detector is fundamentally solved.

This invention discloses a surface polishing and cleaning method for indium antimonide based on gradient pressure release and dynamic chemical regulation. The steps include: waxing, primary rough polishing, secondary rough polishing, semi-fine polishing, wafer removal and wax removal, fine polishing, pre-cleaning, and cleaning. This method introduces a gradient pressure release strategy in the multi-stage polishing process, combined with dynamic chemical regulation of an organic acid and sodium salt system, to achieve progressive stress release and selective surface etching during polishing. In the fine polishing stage, an adsorption pad is used to stabilize the wafer, avoiding organic contamination introduced by traditional waxing. Combined with subsequent synergistic cleaning and surface passivation processes, an integrated polishing-cleaning-passivation synergistic process is formed. This invention can obtain a high-quality indium antimonide surface with a surface roughness Ra≤0.15nm, oxide layer thickness controlled within 1.2±0.3nm, no scratches, and ultra-cleanliness, significantly improving substrate surface quality and epitaxial growth compatibility.

A transparent horizontal gradient freeze (HGF) furnace enables determining a crystallizing growth rate of an ingot by optically monitoring the rate at which a solid / liquid interface traverses across a charge of melted precursor material. The crystallization can be recorded for subsequent analysis, or a machine vision system can monitor and report the solid / liquid traversing rate in near real time, thereby enabling automated regulation of the growth rate to ensure uniform growth. Embodiments implement the disclosed furnace to produce crystalline or polycrystalline indium antimonide mixed with 1.8 wt % nickel antimonide (InSb:NiSb) at a growth rate specified according to required InSb:NiSb properties and a predetermined relationship between the growth rate and the properties of the NiSb needles formed in the ingot. Growth rates can be between 0.02 and 0.08 cm / hr for substantially single crystal ingots, and between 0.5 and 1.5 cm / hr for polycrystalline ingots. The InSb:NiSb can be doped with tellurium.

The invention relates to an indium antimonide-containing heterogeneous wafer preparation method capable of reducing annealing thermal stress and a product, and belongs to the technical field of indium antimonide-containing heterogeneous wafer manufacturing. The method comprises the following steps: providing a donor indium antimonide substrate, and performing ion implantation to form an ion implantation layer, a weakening layer and a donor substrate residual layer; providing a carrier indium antimonide substrate; depositing Al2O3 passivation layers on the surfaces of the carrier indium antimonide substrate and the donor indium antimonide substrate; continuously depositing a SiO2 layer on the carrier indium antimonide substrate; bonding the SiO2 layer of the carrier indium antimonide substrate with the Al2O3 passivation layer of the donor indium antimonide substrate, annealing for 10-20 hours at a low temperature of less than or equal to 200 DEG C, and stripping the donor indium antimonide substrate; providing a SiC / Si substrate, wherein the stripping surface of the ion implantation layer is bonded with the SiC / Si substrate; and carrying out wet etching by using BOE / DHF corrosive liquid to obtain a heterogeneous wafer.

The present invention relates to a method for the production of InSb colloidal quantum dots comprising the steps of: a) providing a reaction solution comprising a solvent and a single-source precursor; and b) heating the reaction solution to a reaction temperature for a reaction period such that the single-source precursor thermally decomposes to form InSb colloidal quantum dots, wherein the single-source precursor is selected from InSb adducts, InSb oligomers, and combinations thereof.

The present invention discloses a tunable polarization-encoded antenna cover based on a multi-layer structure, comprising: an electromagnetic coil, a temperature controller, a dielectric layer, and a rotating carrier stage, arranged in sequence from top to bottom; a protective cover, which covers the electromagnetic coil, the temperature controller, the dielectric layer, and covers the carrier stage; a control circuit, which is used to change the intensity and direction of the magnetic field generated by the electromagnetic coil by controlling the current of the electromagnetic coil; a temperature controller, which is used to change the ambient temperature; and a dielectric layer comprising indium antimonide material, which is used to change the cyclotron frequency of the indium antimonide material and thus the dielectric constant of the dielectric layer according to changes in the intensity, direction, and temperature of the ambient magnetic field. Advantages: By adjusting the dielectric constant of the indium antimonide material by adjusting the temperature and magnetic induction intensity, the coded output of the four polarization forms of the electromagnetic wave is achieved; the present invention is integrated and adjustable, and is a high-performance signal selection and protection device.

According to the back thinning and polishing preparation method for the infrared focal plane array chip assembly, indium columns are evenly distributed between the lower surface of an indium antimonide chip and the upper surface of a circuit, and filling glue is poured between the lower surface of the indium antimonide chip and the upper surface of the circuit in a vacuum mode; the back thinning and polishing preparation method comprises the steps of inverted interconnection, epoxy glue filling and curing, quartz substrate bonding, single-point diamond turning, chemical mechanical polishing, cleaning and corrosion. According to the method, a single-point turning machining mode is adopted, so that damage and crack are not generated, pit-shaped point stress damage is not generated, the PV value is smaller than 1 micron, the machining process is controllable, a traditional downward pressurization grinding mode is changed, the difficulties of pressurization cracking and non-uniform thickness faced by module surface type warping are overcome, and the method can be widely applied to infrared focal plane array chips.

The application provides a hot tunable broadband achromatic terahertz metasurface lens based on indium antimonide, relates to the field of electromagnetic metasurfaces, and utilizes the dielectric properties of indium antimonide material sensitive to temperature to realize dynamic switching of functions by regulating the working temperature. The metasurface lens is composed of a high-resistivity silicon column layer and an indium antimonide dielectric layer, and the dielectric parameters of indium antimonide continuously change with the continuous change of temperature. Under the incidence of a conventional Gaussian beam, the device exhibits broadband achromatic focusing performance; under the incidence of a vortex beam, the device maintains a stable focal length position and high mode purity. The application integrates the functions of a broadband achromatic superlens and a tunable vortex generator in a single metasurface structure, breaks through the limitation of single function of a traditional metasurface, and significantly improves the flexibility, adaptability and integration of the device in the application in the terahertz wave band.

The invention relates to the technical field of cutting machining, and discloses an indium antimonide single crystal rod cutting machining device and method.The indium antimonide single crystal rod cutting machining device comprises a supporting frame, an indium antimonide single crystal rod input mechanism, a cut output mechanism and a cutting machining mechanism, first supporting legs are fixedly arranged at the corners of the bottom of the supporting frame, and the front portion of the supporting frame extends towards the left end to be fixedly connected with a transverse rod; a second supporting leg is fixedly arranged at the bottom of the left end of the transverse rod, the indium antimonide single crystal rod input mechanism is fixedly arranged at the near left end of the top of the transverse rod, the cut output mechanism is fixedly arranged at the near right end of the top of the transverse rod, and a cutting groove is formed in the near right end of the transverse rod; the cutting machining mechanism is installed above the supporting frame and used for cutting to the cutting groove. According to the automatic crystal bar cutting machine, automatic adaption to crystal bars of different specifications is achieved, the positioning precision is high, the crystal bars are stably input, the cutting machining mechanism achieves automatic overturning adjustment and high-speed cutting to the position above the crystal bars, after cutting, the output mechanism automatically controls the lifting adjustment drive to control output of the cut crystal bars, and the machining efficiency is greatly improved.

The invention relates to a back thinning method for an infrared focal plane detector, which belongs to the technical field of infrared focal plane detectors and comprises the following steps of: pasting a chip, smearing a binder on a substrate, and adhering an infrared focal plane detector chip needing back thinning to the substrate; clamping, namely clamping the substrate adhered with the silicon readout circuit and the indium antimonide photosensitive element chip onto a diamond single-point lathe; back thinning is conducted, specifically, back thinning is conducted on the indium antimonide photosensitive element chip, and the residual thickness of the indium antimonide photosensitive element chip is accurately controlled in the machining process; detection: detecting whether the surface roughness and the surface shape precision of the indium antimonide photosensitive element chip reach the standard or not, if so, carrying out the next process, and if not, carrying out scrap treatment; and cleaning and drying: washing the surface of the indium antimonide photosensitive element chip by using pure water, and blow-drying by using nitrogen after washing is completed. The diamond single-point turning back thinning device has the advantages of being high in machining speed, small in stress of a machined detector, low in cost and the like, and has beneficial economic benefits.

The invention provides a chiral metamaterial absorber for multifunctional sensing and a preparation method thereof, and relates to the technical field of optics, the absorber comprises three-dimensional double-layer unit structures arranged periodically, and each unit structure sequentially comprises a Z-like chiral metal layer and a temperature-sensitive semiconductor layer from top to bottom; the Z-like chiral metal layer is made of gold; the temperature-sensitive semiconductor layer is made of indium antimonide, the dielectric constant of the temperature-sensitive semiconductor layer dynamically changes along with the temperature, and active regulation and control of the terahertz wave band circular dichroism are achieved. Through a periodic three-dimensional structure of the Z-shaped chiral metal layer and the temperature-sensitive semiconductor layer, strong chiral selective absorption is realized in a terahertz wave band, and the terahertz temperature sensor has a 300-360K high-sensitivity temperature sensing function, a 1.0-2.0 wide-range refractive index and a high-quality factor guarantee efficient integration function.

The invention relates to a surface cleaning method of an (111) crystal orientation indium antimonide wafer, which comprises the following steps of: pre-cleaning the surface of the wafer by using a solution containing a surfactant, and immersing the wafer in a mixed solution of hydrogen peroxide, ammonia water and water for corrosion after washing; then the wafer is immersed in a dilute sulphuric acid solution containing ozone to be cleaned, and a better surface cleaning effect is achieved through mixed solution corrosion and cleaning with the dilute sulphuric acid solution containing ozone, so that the particle density of the surface of the wafer is better reduced, metal residues are reduced, and uniform oxidation is achieved.

The invention relates to a photoelectric detector with an organic material-indium antimonide quantum dot blending as a photoactive layer and a preparation method thereof, and the device structure of the photoelectric detector comprises a metal electrode layer, an electron transport layer, a photosensitive active layer, a hole transport layer and a transparent conductive glass layer from top to bottom in sequence. Wherein the material of the photosensitive active layer is a thin film prepared by blending an organic semiconductor material and indium antimonide (InSb) quantum dots, the indium antimonide quantum dots are used for generating photon-generated carriers, the organic material is used as an external transmission channel of the photon-generated carriers, and the combination of the indium antimonide quantum dots and the organic material effectively improves the charge generation and transfer characteristics, so that the photoelectric conversion efficiency is improved. The novel photoelectric detector formed by the indium antimonide quantum dots is successfully realized on the indium tin oxide transparent conductive glass substrate, the photoelectric detector has high light current response and high response speed, and the wide spectrum response of an infrared band can be realized; the invention further provides a preparation method of the photoelectric detector, the preparation method is simple, raw materials are rich, the device performance is high, and the photoelectric detector has a relatively high application prospect in the field of infrared detection.

The invention provides an indium antimonide chip beryllium ion implantation and rapid thermal annealing damage repair method and system, and relates to the technical field of semiconductor materials, and the method comprises the following steps: carrying out deep damage detection on a chip after beryllium ion implantation, determining a depth layer structure based on damage distribution data, generating a defect distribution map, and calculating annihilation activation energy. A temperature stage sequence is established, a segmented rapid thermal annealing curve is generated in combination with energy intervals, surface resistivity signals and reflectivity signals are monitored in the thermal treatment process, temperature stage termination time is adjusted, compensation thermal treatment is applied, lattice damage is efficiently repaired, and doping uniformity and chip stability are improved.

This application relates to the field of semiconductor crystal growth technology, specifically disclosing a quartz crucible anti-crack cooling method and crystal growth system for indium antimonide crystal growth. This application provides a quartz crucible anti-crack cooling method for indium antimonide crystal growth. First, before cooling begins, the relative position of the crucible within the single-crystal furnace is adjusted to fundamentally reduce the axial temperature difference of the crucible, laying a stable initial condition for subsequent uniform cooling. Subsequently, combined with a "segmented" cooling strategy, the cooling process is precisely adapted to the material properties of the quartz crucible and the indium antimonide crystal, effectively reducing the probability of quartz crucible breakage during cooling. This effectively solves the problem of quartz crucible breakage due to indium antimonide residue in existing quartz crucible cooling processes.

A method for the production of InSb colloidal quantum dots comprises the steps of: a) providing a reaction solution comprising a solvent and a single-source precursor; and b) heating the reaction solu

This invention belongs to the field of semiconductor material production and discloses a method for etching and cleaning indium antimonide seed crystals. The method includes: cooling the etching solution to 10-18°C, then immersing the indium antimonide seed crystal in the etching solution for etching; then transferring the indium antimonide seed crystal to warm water at 35-50°C for immersion, followed by rinsing with deionized water and drying. By controlling the etching temperature and the composition of the etching solution, a stable etching rate is achieved, precisely removing the damaged layer and contaminants from the surface of the indium antimonide seed crystal, and avoiding over-etching that could lead to rough crystal surfaces or defects.

A hybrid heterostructure (10) includes a semiconductor layer (12) including indium antimonide, a superconductor layer (16) including aluminum, and a shield layer (14) between the semiconductor layer and the superconductor layer, the shield layer including indium arsenide. By including an indium arsenide shield layer between the indium antimonide semiconductor layer and the aluminum superconductor layer, a high performance and durable hybrid heterostructure suitable for use in a quantum computing device is provided.