44 results about "Indium antimonide" patented technology

The invention relates to a 4-inch low-dislocation indium antimonide lt; 211gt, 211gt; the invention discloses a preparation method of directional single crystals and belongs to the technical field of photoelectric materials. According to the method, a Czochralski method is adopted to grow the single crystal, a resistance furnace is arranged on the periphery of an induction coil of a heating device, and by accurately controlling heating conditions, designing a proper temperature field in a growth chamber and further combining growth conditions such as the state of a solid-liquid interface, the pulling speed, the rotating speed and particularly the shoulder expanding angle in the crystal growth process, the single crystal is obtained. The longitudinal temperature gradient in the crystal growth process is reduced, and the dislocation density of the large-size indium antimonide single crystal with the diameter of 4 inches can be obviously reduced, so that indium antimonide is enabled to be lt; 211gt, 211gt; the dislocation density of the directional single crystal is less than 100 / cm < 2 >.

This application relates to a method and product for preparing indium antimonide heterostructures that can reduce annealing thermal stress, belonging to the field of indium antimonide heterostructure manufacturing technology. The method includes: providing a donor indium antimonide substrate; forming an ion implantation layer, a weakening layer, and a residual substrate layer by ion implantation; providing a carrier indium antimonide substrate; depositing an Al2O3 passivation layer on the surfaces of the carrier indium antimonide substrate and the donor indium antimonide substrate; further depositing a SiO2 layer on the carrier indium antimonide substrate; bonding the SiO2 layer on the carrier indium antimonide substrate to the Al2O3 passivation layer on the donor indium antimonide substrate; annealing at a low temperature of ≤200℃ for 10~20h; peeling off the donor indium antimonide substrate; providing a SiC / Si substrate; bonding the peeled surface of the ion implantation layer to the SiC / Si substrate; and wet etching using BOE / DHF etching solution to obtain the heterostructure wafer.

This invention relates to a highly efficient automated splicing system for indium antimonide short crystal rods, belonging to the field of semiconductor material processing technology. Specifically, it relates to a highly efficient bonding and slicing technology for multiple short crystal rods of indium antimonide, indium phosphide, and other materials. The system includes a crystal rod conveying unit, a crystal orientation and size measurement unit, a splicing planning module, a buffer plate selection and adhesive application unit, and a crystal rod posture adjustment and bonding unit. This system achieves full automation from crystal rod loading to long rod assembly unloading. One operator can simultaneously manage three machines, requiring only periodic material replenishment; this reduces labor requirements by more than 80% compared to traditional manual splicing.

The present invention relates to the field of semiconductors, and in particular to a method for preparing a TMBS device, comprising the following steps: step 1, using a single crystal silicon material as a substrate material; step 2, forming an indium nitride buffer layer on the upper surface of the substrate base by chemical vapor deposition; step 3, growing a layer of indium germanium antimonide as an epitaxial layer on the surface of the buffer layer by chemical vapor deposition; step 4, opening a groove; step 5, setting a Schottky barrier and a metal layer, and obtaining the desired TMBS device. The epitaxial layer used in the present invention is indium germanium antimonide, which has lower surface defects and better breakdown resistance than indium antimonide, so that the TMBS device has a wide range of application prospects in the fields of power electronics, new energy vehicles, and photovoltaics.

The invention discloses an indium antimonide-based thermoelectric alloy, the chemical formula of the indium antimonide-based thermoelectric alloy is InSb1-xBix, x is 0.02-0.05, the invention also discloses a preparation method, and the preparation method comprises the following steps: (1) weighing alloy raw materials indium particles and antimony particles according to a molar ratio of 1: 1.01-1: 1.03, adding bismuth powder according to a molar ratio of x: 1 to indium, and uniformly mixing the indium particles, the antimony particles and the bismuth powder; through reasonable doping of bismuth, the alloy has high conductivity, high Seebeck coefficient and low thermal conductivity, and the thermoelectric performance of the alloy is improved.

The present invention provides a highly sensitive multifunctional terahertz metamaterial sensor, belonging to the field of terahertz sensing technology. The sensor is composed of a number of identical periodically arranged metamaterial structural units. The specific structure of the metamaterial structural unit is arranged successively from top to bottom as follows: a graphene pattern layer, an indium antimonide dielectric layer, and a metal reflection layer. Among them, the graphene pattern layer is composed of two sets of mutually nested resonant structures, and each set includes four L-shaped strips with equal size, biaxial and centrosymmetric. The present invention utilizes the electro-tunability of graphene and the thermal and magnetic sensitivity characteristics of indium antimonide to achieve excellent performance and diverse functions in sensing, expanding its application scope in the field of terahertz sensing.

The application discloses a kind of based on indium antimonide-medium composite super surface cascade active magneto-optical terahertz non-reciprocal deflection device, belong to novel artificial electromagnetic material and terahertz science and technology field.The application will combine indium antimonide, medium super surface and wave plate, and cascade two-layer structure, realize the multi-degree-of-freedom control and scanning of light beam.Different static magnetic field is applied by electromagnet, so that indium antimonide produces Faraday optical rotation effect to incident terahertz wave, to control the polarization angle of wave plate, further realize the spin state of incident to geometric phase super surface.Different deflection effects are produced to different spin states by geometric phase super surface.By the combination of the above-mentioned device, the application can realize the deflection of dynamic light beam, finally realize the active deflection device of terahertz in 0.4~0.55THz range, and the deflection angle range can reach 42° to 67.8°.And, due to the time reversal symmetry breaking introduced by magnetic field, the device also has non-reciprocity, protects the stability of system.The application has the advantages of active adjustable, integrable, good stability, etc., and has good application prospect in terahertz communication, radar and imaging fields.

The present invention discloses a design and manufacturing method of a micro-flow sensor. The core lies in the selection of the thin film material for the heating and temperature measuring elements of the thermal micro-flow sensor, as well as the fabrication of the heat insulation cavity of the sensor. The thin film material of the heating and temperature measuring elements selects indium antimonide thin film material to replace the traditional platinum resistance material. It has higher detection sensitivity and lower manufacturing cost compared with the sensors made of traditional platinum materials, so it is very suitable for the detection of micro-flows.

The present invention discloses a process for synthesizing indium arsenide epitaxial thin film wafers using arsenic tribromide, belonging to the technical field of semiconductor materials. The process comprises the following steps: (1) replacing the air in the reaction tube with hydrogen; placing an indium antimonide substrate in the reaction tube, and uniformly placing small-particle-size indium grains on the surface of the indium antimonide substrate; (2) heating the indium antimonide substrate and the indium grains to melt the indium grains and uniformly attach them to the surface of the indium antimonide substrate; (3) heating the liquid arsenic tribromide storage tank to vaporize the liquid arsenic tribromide and introducing it into the reaction tube through hydrogen; (4) heating the reaction tube to cause the small-particle-size indium grains, arsenic tribromide, and hydrogen to react to form indium arsenide on the indium antimonide substrate; (5) cooling to obtain the finished indium arsenide epitaxial thin film wafer. The present invention uses liquid arsenic tribromide as a raw material, reduces the dependence on high-purity arsenic as an upstream raw material, and reduces production costs; the thickness of the prepared indium arsenide epitaxial thin film wafer is also significantly improved.

A quantum well field effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer include undoped aluminum indium antimonide. The quantum well layer includes indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. The gate contact is on the dielectric layer, and the dielectric layer is on the spacer layer. By setting the barrier layer and the spacer layer as undoped layers, the performance of the QWFET can be improved.

The invention discloses a self-powered remote intelligent power distribution current continuous monitoring terminal system, and relates to the technical field of current monitoring. According to the invention, through a self-energy-supply design and a multifunctional monitoring structure, accurate and continuous monitoring of the current of the distribution cable is realized. The alternating-current and direct-current characteristics of a cable to be tested are utilized, electric energy is collected and stored through magnetic field induction, an indium antimonide plate and a wind power and solar power generation module, and self-powered operation of equipment is guaranteed. The arc-shaped cover and the power generation paddle structure generate power and dissipate heat through the airflow pressure difference, the resistance sliding rod monitors airflow changes to detect blockage of the exhaust port, and the maintenance efficiency is optimized. The clamping mechanism ensures stable installation of the cable, and the external generator adapts to a low-wind-speed environment.

The invention discloses a preparation method of indium antimonide. 100 gt; the invention discloses a wafer dislocation detection method and dislocation corrosive liquid, and relates to the technical field of semiconductor material defect detection. The dislocation etchant is obtained by mixing hydrofluoric acid, hydrogen peroxide and deionized water according to the volume ratio of 1: (1.2-1.8): (4-5), and the dislocation etchant is used for indium antimonide. 100 gt; when the wafer is corroded, regular and clear dislocation corrosion pits which are easy to identify can be shown, so that the indium antimonide lt can be identified; 100 gt; the dislocation number and density of the wafer are detected, and indium antimonide lt is detected; 100 gt; and an effective guarantee is provided for the production quality control of the wafer and the reliability of downstream devices.

The application provides a chiral metamaterial absorber for multifunctional sensing and a preparation method thereof, and relates to the technical field of optics.The absorber comprises a periodically arranged three-dimensional double-layer unit structure, each unit structure sequentially comprises a Z-shaped chiral metal layer and a temperature-sensitive semiconductor layer from top to bottom; the material of the Z-shaped chiral metal layer is gold; the material of the temperature-sensitive semiconductor layer is indium antimonide, the dielectric constant of which dynamically changes with temperature, thereby realizing active regulation of circular dichroism in the terahertz wave band.The application realizes strong chiral selective absorption in the terahertz wave band through the periodic three-dimensional structure of the Z-shaped chiral metal layer and the temperature-sensitive semiconductor layer, and has high-sensitivity temperature sensing at 300K-360K and a wide-range refractive index of 1.0-2.0, and high-quality factor guarantees efficient integrated functions.

The invention relates to an indium antimonide chip cleaning device and method, and is applied to the field of indium antimonide chip cleaning, the indium antimonide chip cleaning device comprises a shell, a rotating column is rotatably connected in the shell, a driving unit for driving the rotating column to rotate is arranged on the shell, a plurality of placing rings are arranged on the outer edge of the rotating column, and the placing rings are arranged on the outer edge of the rotating column. A plurality of cleaning units for placing chips are respectively arranged on the plurality of placing rings, and a spraying unit for spraying a cleaning agent is arranged on the shell. The automatic cleaning device has the technical effects that the driving unit is started, the rotating column is driven to rotate, the rotating column drives the placing ring and the cleaning unit to rotate synchronously, the spraying unit is started, and a cleaning agent is sprayed to the chip in the cleaning unit, so that the effect of automatically cleaning the indium antimonide chip is achieved, time and labor are saved, the labor cost is reduced, and the cleaning efficiency of the chip is improved.

The present invention relates to a surface cleaning method for an indium antimonide wafer with a (111) crystal orientation. The surface of the wafer is pre-cleaned with a solution containing a surfactant, and after rinsing, the wafer is immersed in a mixed solution of hydrogen peroxide, ammonia and water for etching; the wafer is then immersed in a dilute sulfuric acid solution containing ozone for cleaning. The etching with the mixed solution and the cleaning with the dilute sulfuric acid solution containing ozone achieve a better surface cleaning effect, thereby better reducing the particle density on the wafer surface, reducing metal residue and achieving uniform oxidation.

The invention discloses an InSb quantum dot and a preparation method thereof, and the preparation method comprises the following steps: dispersing indium nanocrystals and antimony nanocrystals in an organic solvent, uniformly mixing, heating to 60-300 DEG C in the presence of a ligand, and reacting for 0.1-120 minutes to obtain the InSb quantum dot. The invention also provides an application of the InSb quantum dot in preparation of a colloidal quantum dot infrared detector, a solar cell or a luminescent device. The indium antimonide quantum dot is prepared by taking the antimony nanocrystal and the indium nanocrystal as precursors, the preparation method of the antimony nanocrystal and the indium nanocrystal is simple, the required initial raw materials are cheap and easy to obtain, and the preparation cost of the indium antimonide quantum dot is reduced.

The present invention relates to a method for the production of InSb colloidal quantum dots comprising the steps of: a) providing a reaction solution comprising a solvent and a single-source precursor; and b) heating the reaction solution to a reaction temperature for a reaction period such that the single-source precursor thermally decomposes to form InSb colloidal quantum dots, wherein the single-source precursor is selected from InSb adducts, InSb oligomers, and combinations thereof.

An annealing method of an indium antimonide wafer includes the steps of: S1, growing an undoped Te InSb crystal by a pulling method, the carrier concentration of the InSb crystal being 2E14 / cm 3 The following InSb crystal; S2, slicing the InSb crystal as an InSb wafer; S3, grinding and polishing the InSb wafer; S4, adding a mixed solution of ethanol and tellurium tetrachloride into a flask through a grinding mouth of the flask, the mass fraction of the tellurium tetrachloride in the mixed solution being 1-5%, and the other grinding mouth of the flask being used for installing a recondensation device; S5, putting the ground and polished InSb wafer into the mixed solution in the flask through the grinding mouth and completely immersing the InSb wafer in the mixed solution; S6, installing the recondensation device on the corresponding grinding mouth of the flask and plugging the other grinding mouth of the flask; S7, heating the mixed solution in the flask to 60-70 DEG C and annealing for 10-20 hours in a recondensation mode, and completing the annealing. Thus, the doping uniformity of the indium antimonide wafer is improved, and the problem of uneven stripes of the manufactured InSb detector is fundamentally solved.

This invention discloses a surface polishing and cleaning method for indium antimonide based on gradient pressure release and dynamic chemical regulation. The steps include: waxing, primary rough polishing, secondary rough polishing, semi-fine polishing, wafer removal and wax removal, fine polishing, pre-cleaning, and cleaning. This method introduces a gradient pressure release strategy in the multi-stage polishing process, combined with dynamic chemical regulation of an organic acid and sodium salt system, to achieve progressive stress release and selective surface etching during polishing. In the fine polishing stage, an adsorption pad is used to stabilize the wafer, avoiding organic contamination introduced by traditional waxing. Combined with subsequent synergistic cleaning and surface passivation processes, an integrated polishing-cleaning-passivation synergistic process is formed. This invention can obtain a high-quality indium antimonide surface with a surface roughness Ra≤0.15nm, oxide layer thickness controlled within 1.2±0.3nm, no scratches, and ultra-cleanliness, significantly improving substrate surface quality and epitaxial growth compatibility.

A transparent horizontal gradient freeze (HGF) furnace enables determining a crystallizing growth rate of an ingot by optically monitoring the rate at which a solid / liquid interface traverses across a charge of melted precursor material. The crystallization can be recorded for subsequent analysis, or a machine vision system can monitor and report the solid / liquid traversing rate in near real time, thereby enabling automated regulation of the growth rate to ensure uniform growth. Embodiments implement the disclosed furnace to produce crystalline or polycrystalline indium antimonide mixed with 1.8 wt % nickel antimonide (InSb:NiSb) at a growth rate specified according to required InSb:NiSb properties and a predetermined relationship between the growth rate and the properties of the NiSb needles formed in the ingot. Growth rates can be between 0.02 and 0.08 cm / hr for substantially single crystal ingots, and between 0.5 and 1.5 cm / hr for polycrystalline ingots. The InSb:NiSb can be doped with tellurium.

The invention discloses a cascade active magneto-optical terahertz non-reciprocal deflection device based on an indium antimonide-medium composite metasurface, and belongs to the technical field of novel artificial electromagnetic materials and terahertz science. According to the invention, indium antimonide, the medium metasurface and the wave plate are combined, and the two layers of structures are cascaded, so that multi-degree-of-freedom control and scanning of light beams are realized. Different static magnetic fields are applied through an electromagnet, so that indium antimonide generates a Faraday optical rotation effect on incident terahertz waves, the polarization angle of the incident terahertz waves is controlled, and the spin state of the incident terahertz waves on the geometric phase metasurface is further achieved. And meanwhile, the geometric phase metasurface generates different deflection effects on different spinning states. Through the combination of the above devices, the terahertz active deflection device can realize the deflection of dynamic light beams, and finally realizes the terahertz active deflection device which works in a range of 0.4-0.55 THz and has a deflection angle range of 42-67.8 degrees. Moreover, due to the fact that the time reversal symmetry introduced by the magnetic field is broken, the device further has nonreciprocity, and the stability of the system is protected. The device has the advantages of active adjustability, integration, good stability and the like, and has a good application prospect in the fields of terahertz communication, radar, imaging and the like.

The invention relates to an indium antimonide-containing heterogeneous wafer preparation method capable of reducing annealing thermal stress and a product, and belongs to the technical field of indium antimonide-containing heterogeneous wafer manufacturing. The method comprises the following steps: providing a donor indium antimonide substrate, and performing ion implantation to form an ion implantation layer, a weakening layer and a donor substrate residual layer; providing a carrier indium antimonide substrate; depositing Al2O3 passivation layers on the surfaces of the carrier indium antimonide substrate and the donor indium antimonide substrate; continuously depositing a SiO2 layer on the carrier indium antimonide substrate; bonding the SiO2 layer of the carrier indium antimonide substrate with the Al2O3 passivation layer of the donor indium antimonide substrate, annealing for 10-20 hours at a low temperature of less than or equal to 200 DEG C, and stripping the donor indium antimonide substrate; providing a SiC / Si substrate, wherein the stripping surface of the ion implantation layer is bonded with the SiC / Si substrate; and carrying out wet etching by using BOE / DHF corrosive liquid to obtain a heterogeneous wafer.

The present invention discloses a hypersensitive terahertz liquid sensor based on the optical Tamm state photon spin Hall effect, which can be applied to liquid detection in chemical analysis. This sensor consists of an analyte layer, an indium antimonide layer, a near-zero refractive index material layer, and a Bragg reflection structure layer, and the analyte layer is the liquid to be measured. An incident linearly polarized light beam (terahertz band) is irradiated on the sensor structure, and by measuring the spin offset of the spin Hall effect of the reflected light after filling the liquid to be measured, the type and concentration of the filled liquid can be detected. This terahertz liquid sensor based on the optical Tamm state photon spin Hall effect has a large numerical value of the spin offset, is very sensitive to the changes in the type and concentration of the liquid to be measured, and has high intensity sensitivity and excellent sensing performance. When the sensor of the present invention detects a liquid, it has low dependence on environmental factors such as temperature and has good device stability.

The present invention relates to a method for the production of InSb colloidal quantum dots comprising the steps of: a) providing a reaction solution comprising a solvent and a single-source precursor; and b) heating the reaction solution to a reaction temperature for a reaction period such that the single-source precursor thermally decomposes to form InSb colloidal quantum dots, wherein the single-source precursor is selected from InSb adducts, InSb oligomers, and combinations thereof.

The invention discloses a method for preparing single-crystal-phase intermediate infrared band gap indium antimonide colloidal quantum dots through gradual crystallization, which comprises the following steps: (1) preparing a precursor solution containing an indium precursor and an antimony precursor, and heating at 100-300 DEG C for 10-180 minutes; (2) in an inert atmosphere, heating a solvent to a reduction temperature, adding a reducing agent and the heated precursor solution, and maintaining a reaction system at the reduction temperature for 5-60 minutes; and heating the system to a reaction temperature, keeping the temperature for 1-180 minutes, and stopping the reaction to obtain the single-crystal-phase intermediate infrared band gap indium antimonide colloidal quantum dots. The invention also discloses the intermediate infrared band gap indium antimonide colloidal quantum dot prepared by the preparation method. According to the preparation method disclosed by the invention, complicated post-treatment is not needed, the prepared intermediate infrared band gap indium antimonide colloidal quantum dots are in a single crystal phase, the size is large, the spectral response range is relatively wide, and the prepared indium antimonide colloidal quantum dots are good in repeatability.

The present invention discloses a tunable polarization-encoded antenna cover based on a multi-layer structure, comprising: an electromagnetic coil, a temperature controller, a dielectric layer, and a rotating carrier stage, arranged in sequence from top to bottom; a protective cover, which covers the electromagnetic coil, the temperature controller, the dielectric layer, and covers the carrier stage; a control circuit, which is used to change the intensity and direction of the magnetic field generated by the electromagnetic coil by controlling the current of the electromagnetic coil; a temperature controller, which is used to change the ambient temperature; and a dielectric layer comprising indium antimonide material, which is used to change the cyclotron frequency of the indium antimonide material and thus the dielectric constant of the dielectric layer according to changes in the intensity, direction, and temperature of the ambient magnetic field. Advantages: By adjusting the dielectric constant of the indium antimonide material by adjusting the temperature and magnetic induction intensity, the coded output of the four polarization forms of the electromagnetic wave is achieved; the present invention is integrated and adjustable, and is a high-performance signal selection and protection device.

According to the back thinning and polishing preparation method for the infrared focal plane array chip assembly, indium columns are evenly distributed between the lower surface of an indium antimonide chip and the upper surface of a circuit, and filling glue is poured between the lower surface of the indium antimonide chip and the upper surface of the circuit in a vacuum mode; the back thinning and polishing preparation method comprises the steps of inverted interconnection, epoxy glue filling and curing, quartz substrate bonding, single-point diamond turning, chemical mechanical polishing, cleaning and corrosion. According to the method, a single-point turning machining mode is adopted, so that damage and crack are not generated, pit-shaped point stress damage is not generated, the PV value is smaller than 1 micron, the machining process is controllable, a traditional downward pressurization grinding mode is changed, the difficulties of pressurization cracking and non-uniform thickness faced by module surface type warping are overcome, and the method can be widely applied to infrared focal plane array chips.

The application provides a hot tunable broadband achromatic terahertz metasurface lens based on indium antimonide, relates to the field of electromagnetic metasurfaces, and utilizes the dielectric properties of indium antimonide material sensitive to temperature to realize dynamic switching of functions by regulating the working temperature. The metasurface lens is composed of a high-resistivity silicon column layer and an indium antimonide dielectric layer, and the dielectric parameters of indium antimonide continuously change with the continuous change of temperature. Under the incidence of a conventional Gaussian beam, the device exhibits broadband achromatic focusing performance; under the incidence of a vortex beam, the device maintains a stable focal length position and high mode purity. The application integrates the functions of a broadband achromatic superlens and a tunable vortex generator in a single metasurface structure, breaks through the limitation of single function of a traditional metasurface, and significantly improves the flexibility, adaptability and integration of the device in the application in the terahertz wave band.

The invention relates to the technical field of cutting machining, and discloses an indium antimonide single crystal rod cutting machining device and method.The indium antimonide single crystal rod cutting machining device comprises a supporting frame, an indium antimonide single crystal rod input mechanism, a cut output mechanism and a cutting machining mechanism, first supporting legs are fixedly arranged at the corners of the bottom of the supporting frame, and the front portion of the supporting frame extends towards the left end to be fixedly connected with a transverse rod; a second supporting leg is fixedly arranged at the bottom of the left end of the transverse rod, the indium antimonide single crystal rod input mechanism is fixedly arranged at the near left end of the top of the transverse rod, the cut output mechanism is fixedly arranged at the near right end of the top of the transverse rod, and a cutting groove is formed in the near right end of the transverse rod; the cutting machining mechanism is installed above the supporting frame and used for cutting to the cutting groove. According to the automatic crystal bar cutting machine, automatic adaption to crystal bars of different specifications is achieved, the positioning precision is high, the crystal bars are stably input, the cutting machining mechanism achieves automatic overturning adjustment and high-speed cutting to the position above the crystal bars, after cutting, the output mechanism automatically controls the lifting adjustment drive to control output of the cut crystal bars, and the machining efficiency is greatly improved.

The invention relates to a back thinning method for an infrared focal plane detector, which belongs to the technical field of infrared focal plane detectors and comprises the following steps of: pasting a chip, smearing a binder on a substrate, and adhering an infrared focal plane detector chip needing back thinning to the substrate; clamping, namely clamping the substrate adhered with the silicon readout circuit and the indium antimonide photosensitive element chip onto a diamond single-point lathe; back thinning is conducted, specifically, back thinning is conducted on the indium antimonide photosensitive element chip, and the residual thickness of the indium antimonide photosensitive element chip is accurately controlled in the machining process; detection: detecting whether the surface roughness and the surface shape precision of the indium antimonide photosensitive element chip reach the standard or not, if so, carrying out the next process, and if not, carrying out scrap treatment; and cleaning and drying: washing the surface of the indium antimonide photosensitive element chip by using pure water, and blow-drying by using nitrogen after washing is completed. The diamond single-point turning back thinning device has the advantages of being high in machining speed, small in stress of a machined detector, low in cost and the like, and has beneficial economic benefits.