11 results about "Indium antimonide" patented technology

This invention relates to a highly efficient automated splicing system for indium antimonide short crystal rods, belonging to the field of semiconductor material processing technology. Specifically, it relates to a highly efficient bonding and slicing technology for multiple short crystal rods of indium antimonide, indium phosphide, and other materials. The system includes a crystal rod conveying unit, a crystal orientation and size measurement unit, a splicing planning module, a buffer plate selection and adhesive application unit, and a crystal rod posture adjustment and bonding unit. This system achieves full automation from crystal rod loading to long rod assembly unloading. One operator can simultaneously manage three machines, requiring only periodic material replenishment; this reduces labor requirements by more than 80% compared to traditional manual splicing.

The invention discloses an indium antimonide-based thermoelectric alloy, the chemical formula of the indium antimonide-based thermoelectric alloy is InSb1-xBix, x is 0.02-0.05, the invention also discloses a preparation method, and the preparation method comprises the following steps: (1) weighing alloy raw materials indium particles and antimony particles according to a molar ratio of 1: 1.01-1: 1.03, adding bismuth powder according to a molar ratio of x: 1 to indium, and uniformly mixing the indium particles, the antimony particles and the bismuth powder; through reasonable doping of bismuth, the alloy has high conductivity, high Seebeck coefficient and low thermal conductivity, and the thermoelectric performance of the alloy is improved.

The invention discloses a preparation method of indium antimonide. 100 gt; the invention discloses a wafer dislocation detection method and dislocation corrosive liquid, and relates to the technical field of semiconductor material defect detection. The dislocation etchant is obtained by mixing hydrofluoric acid, hydrogen peroxide and deionized water according to the volume ratio of 1: (1.2-1.8): (4-5), and the dislocation etchant is used for indium antimonide. 100 gt; when the wafer is corroded, regular and clear dislocation corrosion pits which are easy to identify can be shown, so that the indium antimonide lt can be identified; 100 gt; the dislocation number and density of the wafer are detected, and indium antimonide lt is detected; 100 gt; and an effective guarantee is provided for the production quality control of the wafer and the reliability of downstream devices.

An annealing method of an indium antimonide wafer includes the steps of: S1, growing an undoped Te InSb crystal by a pulling method, the carrier concentration of the InSb crystal being 2E14 / cm 3 The following InSb crystal; S2, slicing the InSb crystal as an InSb wafer; S3, grinding and polishing the InSb wafer; S4, adding a mixed solution of ethanol and tellurium tetrachloride into a flask through a grinding mouth of the flask, the mass fraction of the tellurium tetrachloride in the mixed solution being 1-5%, and the other grinding mouth of the flask being used for installing a recondensation device; S5, putting the ground and polished InSb wafer into the mixed solution in the flask through the grinding mouth and completely immersing the InSb wafer in the mixed solution; S6, installing the recondensation device on the corresponding grinding mouth of the flask and plugging the other grinding mouth of the flask; S7, heating the mixed solution in the flask to 60-70 DEG C and annealing for 10-20 hours in a recondensation mode, and completing the annealing. Thus, the doping uniformity of the indium antimonide wafer is improved, and the problem of uneven stripes of the manufactured InSb detector is fundamentally solved.

This invention discloses a surface polishing and cleaning method for indium antimonide based on gradient pressure release and dynamic chemical regulation. The steps include: waxing, primary rough polishing, secondary rough polishing, semi-fine polishing, wafer removal and wax removal, fine polishing, pre-cleaning, and cleaning. This method introduces a gradient pressure release strategy in the multi-stage polishing process, combined with dynamic chemical regulation of an organic acid and sodium salt system, to achieve progressive stress release and selective surface etching during polishing. In the fine polishing stage, an adsorption pad is used to stabilize the wafer, avoiding organic contamination introduced by traditional waxing. Combined with subsequent synergistic cleaning and surface passivation processes, an integrated polishing-cleaning-passivation synergistic process is formed. This invention can obtain a high-quality indium antimonide surface with a surface roughness Ra≤0.15nm, oxide layer thickness controlled within 1.2±0.3nm, no scratches, and ultra-cleanliness, significantly improving substrate surface quality and epitaxial growth compatibility.

According to the back thinning and polishing preparation method for the infrared focal plane array chip assembly, indium columns are evenly distributed between the lower surface of an indium antimonide chip and the upper surface of a circuit, and filling glue is poured between the lower surface of the indium antimonide chip and the upper surface of the circuit in a vacuum mode; the back thinning and polishing preparation method comprises the steps of inverted interconnection, epoxy glue filling and curing, quartz substrate bonding, single-point diamond turning, chemical mechanical polishing, cleaning and corrosion. According to the method, a single-point turning machining mode is adopted, so that damage and crack are not generated, pit-shaped point stress damage is not generated, the PV value is smaller than 1 micron, the machining process is controllable, a traditional downward pressurization grinding mode is changed, the difficulties of pressurization cracking and non-uniform thickness faced by module surface type warping are overcome, and the method can be widely applied to infrared focal plane array chips.

The application provides a hot tunable broadband achromatic terahertz metasurface lens based on indium antimonide, relates to the field of electromagnetic metasurfaces, and utilizes the dielectric properties of indium antimonide material sensitive to temperature to realize dynamic switching of functions by regulating the working temperature. The metasurface lens is composed of a high-resistivity silicon column layer and an indium antimonide dielectric layer, and the dielectric parameters of indium antimonide continuously change with the continuous change of temperature. Under the incidence of a conventional Gaussian beam, the device exhibits broadband achromatic focusing performance; under the incidence of a vortex beam, the device maintains a stable focal length position and high mode purity. The application integrates the functions of a broadband achromatic superlens and a tunable vortex generator in a single metasurface structure, breaks through the limitation of single function of a traditional metasurface, and significantly improves the flexibility, adaptability and integration of the device in the application in the terahertz wave band.

The invention provides an indium antimonide chip beryllium ion implantation and rapid thermal annealing damage repair method and system, and relates to the technical field of semiconductor materials, and the method comprises the following steps: carrying out deep damage detection on a chip after beryllium ion implantation, determining a depth layer structure based on damage distribution data, generating a defect distribution map, and calculating annihilation activation energy. A temperature stage sequence is established, a segmented rapid thermal annealing curve is generated in combination with energy intervals, surface resistivity signals and reflectivity signals are monitored in the thermal treatment process, temperature stage termination time is adjusted, compensation thermal treatment is applied, lattice damage is efficiently repaired, and doping uniformity and chip stability are improved.

This application relates to the field of semiconductor crystal growth technology, specifically disclosing a quartz crucible anti-crack cooling method and crystal growth system for indium antimonide crystal growth. This application provides a quartz crucible anti-crack cooling method for indium antimonide crystal growth. First, before cooling begins, the relative position of the crucible within the single-crystal furnace is adjusted to fundamentally reduce the axial temperature difference of the crucible, laying a stable initial condition for subsequent uniform cooling. Subsequently, combined with a "segmented" cooling strategy, the cooling process is precisely adapted to the material properties of the quartz crucible and the indium antimonide crystal, effectively reducing the probability of quartz crucible breakage during cooling. This effectively solves the problem of quartz crucible breakage due to indium antimonide residue in existing quartz crucible cooling processes.

A method for the production of InSb colloidal quantum dots comprises the steps of: a) providing a reaction solution comprising a solvent and a single-source precursor; and b) heating the reaction solu

This invention belongs to the field of semiconductor material production and discloses a method for etching and cleaning indium antimonide seed crystals. The method includes: cooling the etching solution to 10-18°C, then immersing the indium antimonide seed crystal in the etching solution for etching; then transferring the indium antimonide seed crystal to warm water at 35-50°C for immersion, followed by rinsing with deionized water and drying. By controlling the etching temperature and the composition of the etching solution, a stable etching rate is achieved, precisely removing the damaged layer and contaminants from the surface of the indium antimonide seed crystal, and avoiding over-etching that could lead to rough crystal surfaces or defects.