Preparation method of low dislocation indium antimonide (111) direction single crystal

Abstract

The invention relates to a preparation method of a low dislocation indium antimonide (111) direction single crystal, and belongs to the technical field of photoelectric materials. According to the preparation method, the temperature, the seed crystal lifting pulling speed and the shouldering angle in the crystal pulling process are mainly regulated, growth of an indium antimonide (111) direction single crystal is realized by the vertical pulling method, and the formed indium antimonide (111) direction single crystal is annealed in situ after the crystal pulling process is finished, so that thedislocation of the prepared indium antimonide (111) direction single crystal can be greatly reduced, and the dislocation density of a large size indium antimonide (111) direction single crystal witha diameter of about 50 mm is lower than 30 / cm<2>. The performance of an infrared detector prepared from the low dislocation indium antimonide (111) direction single crystal is relatively stable. The method greatly broadens the application of the indium antimonide (111) direction single crystal in infrared detectors.

Description

Technical field [0001] The invention relates to a low dislocation indium antimonide <111> The preparation method of directional single crystal belongs to the technical field of optoelectronic materials. Background technique [0002] Indium antimonide is the material with the narrowest band gap and the largest mobility among the III-V compound semiconductors. Its physical and chemical properties are stable and it is widely used in infrared detectors and Hall devices. The quantum efficiency of infrared detectors is closely related to the selected infrared sensitive materials. Indium antimonide has high quantum efficiency in the 3μm~5μm band. In addition, indium antimonide has low cost in preparing infrared detectors. Indium antimonide infrared detection With its important military applications and broad prospects in civilian use, the device has attracted more and more attention. In addition, in order to adapt to the large-scale development trend of indium antimonide infrared...

AI Technical Summary

Problems solved by technology

However, the difficulty in preparing indium antimonide single crystals is to reduce dislocations. The device technology requires low or no dislocations for materials. The dislocation density of indium antimonide single crystals prepared by ordinary methods is at least several hundred per square centimeter. At present, there are relatively few studies on InSb direction low dislocation single crystals, and there is no report on the pulling method of InSb direction low dislocation single crystals, mainly because of the structure of direction single crystals Influenced by the influence, polycrystalline is easy to appear in the crystal pulling process, and it is difficult to pull a low dislocation single crystal with complete direction.