Indium antimonide infrared focal plane array detector chip and manufacturing method thereof

Abstract

An indium antimonide infrared focal plane array detector chip, which includes an antireflection film [6], a low-temperature glue [7], an indium antimonide photosensitive array [8], a silicon readout circuit [9], and an indium column [10] , InSb substrate [11]. Wherein, the indium antimonide photosensitive array [8] is provided with an antireflection film [6] on the back, and an indium pillar [10] is provided on the front. The other end of the indium column [10] is connected to the silicon readout circuit [9], and the backside of the silicon readout circuit [9] is provided with an indium antimonide substrate [11], and the indium antimonide photosensitive array [8], the silicon A low-temperature glue [7] is arranged in the gap between the readout circuit [9] and the indium column [10]. The indium antimonide infrared focal plane array detector chip of the invention achieves thermal matching with the indium antimonide photosensitive array and the silicon readout circuit, reduces strain, and makes the indium antimonide infrared focal plane array detector have higher reliability. In addition, the invention provides a method for manufacturing the indium antimonide infrared focal plane array detector chip.

Description

Indium antimonide infrared focal plane array detector chip and manufacturing method thereof technical field The invention belongs to semiconductor photodetector manufacturing technology, and relates to an indium antimonide infrared focal plane array detector chip and a manufacturing method thereof. Background technique In the process of fabricating an InSb infrared focal plane array detector chip, structural design is a key process that determines the performance and reliability of the detector. The indium antimonide infrared focal plane array detector chip has to withstand the impact from normal temperature (300K) to liquid nitrogen temperature (77K) during testing and work. The thermal expansion coefficient of indium antimonide material is 5.04×10-6K, and the thermal expansion coefficient of silicon material The coefficient is 2.6×10-6K, and there is a large difference in the coefficient of thermal expansion between the two, so the stress caused by thermal mismatch is an...

AI Technical Summary

Problems solved by technology

In order to solve the problem of low reliability of the indium antimonide infrared focal plane array detector chip in the prior art, the present invention provides an indium antimonide infrared focal plane array detector chip with high reliability

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