Manufacturing method of trench isolation structure

A technology of isolation structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of deteriorating the characteristics and reliability of memory components, and achieve the effect of optimal component characteristics and reliability

Active Publication Date: 2012-08-29
WINBOND ELECTRONICS CORP
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the device characteristics and reliability of the memory device are seriously deteriorated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of trench isolation structure
  • Manufacturing method of trench isolation structure
  • Manufacturing method of trench isolation structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Generally speaking, since the peripheral area is usually used to form high-voltage elements and low-voltage elements, before the formation of the gate oxide layer, the peripheral area usually bears more wet etching than the memory cell area, and the high-voltage gate oxide layer in the peripheral area usually bears more wet etching. Thickness reduction is difficult or limited, so the corner thinning problem of the high-voltage gate oxide layer is also more serious in the peripheral region, and the low-voltage gate oxide layer may even grow in the recess. As a result, the device characteristics and reliability of the memory device are degraded. Therefore, the present invention forms the shallow trench isolation structure according to the characteristics of the peripheral area of ​​the memory element and the memory cell area, so as to avoid the angle thinning of the tunnel oxide layer and the gate oxide layer formed on the edge of the shallow trench isolation structure sub...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a manufacturing method of a trench isolation structure. The manufacturing method of the trench isolation structure comprises the following steps of: sequentially forming a patterned cushion layer and a patterned mask layer on a substrate, wherein the substrate comprises a storage unit region and a peripheral region; taking the patterned mask layer as a mask to remove a part of the substrate so as to form a plurality of trenches; forming a first liner on the substrate so as to cover the patterned mask layer, the patterned cushion layer and the surfaces of the trenches; removing the first liner for covering the patterned mask layer, the patterned cushion layer and the surfaces of the trenches in the peripheral region; after removing the first liner in the peripheral region, contracting inwardthe patterned mask layer, so that the contracting amount of the patterned mask layer in the peripheral region is greater than that of the patterned mask layer in the storage unit region; and forming insulating layers in the trenches to form a plurality of shallow trench isolation structures. Through the manufacturing method, a storage device element has better element characteristics and reliability.

Description

technical field [0001] The invention relates to a method for manufacturing an isolation structure, and in particular to a method for manufacturing a shallow trench isolation structure. Background technique [0002] With the advancement of semiconductor technology, the size of components is also continuously reduced. Therefore, in order to prevent the occurrence of short circuit between adjacent components, the isolation between components becomes very important. The more commonly used method today is the Shallow Trench Isolation (STI) process. [0003] Generally, the formation of the STI structure includes forming a pad oxide layer and a patterned mask layer on the substrate, and then removing part of the substrate by using the patterned mask layer as a mask to form shallow trenches in the substrate. . Then, an insulating material is filled in the shallow trench to form a shallow trench isolation structure, and then the pad oxide layer and the patterned mask layer are rem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
Inventor 倪志荣吕珈宏
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap