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Ultra-thin multi-channel terahertz filter having temperature regulation

A multi-channel and filter technology, applied in the field of multi-channel terahertz filters, can solve the problems of difficult adjustment of slit width, thick indium antimonide film, low transmittance of terahertz light, etc.

Inactive Publication Date: 2009-08-12
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the transmittance of terahertz light in this device is low (only about 1.4% at the peak transmittance), and the slit width is not easy to adjust (it can only be adjusted on the micron rotating platform of the microscope). In addition, the indium antimonide thin film Thicker (456 microns)

Method used

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  • Ultra-thin multi-channel terahertz filter having temperature regulation
  • Ultra-thin multi-channel terahertz filter having temperature regulation
  • Ultra-thin multi-channel terahertz filter having temperature regulation

Examples

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Embodiment 1

[0030] In embodiment 1, the substrate is selected as high-impedance single crystal silicon, and the film material is undoped indium antimonide (InSb). The surface of the substrate is made into a sinusoidal surface shape (period 750 microns, surface fluctuation amplitude 150 microns) by photolithography, and then a layer of InSb film (thickness 2.0 microns) is grown on the sinusoidal surface of the substrate surface by laser deposition technology, This multi-channel terahertz filter structure has five resonance modes obtained in the electromagnetic wave frequency range of 0.1 to 3 terahertz, namely: 0.40 terahertz, 0.80 terahertz, 1.20 terahertz, 1.60 terahertz and 2.00 terahertz , when the ambient temperature decreases from 325K to 225K, these five resonance frequencies basically do not change with temperature, but their transmittance increases with the decrease of temperature, and the transmittance can reach up to 90%. Therefore, this multi-channel terahertz filter structure,...

Embodiment 2

[0031] In embodiment 2, the substrate is selected as gallium arsenide, and the thin film material is undoped InSb. The surface of the substrate is etched into a sinusoidal surface shape (period 750 microns, surface undulation amplitude 150 microns) by photolithography and other techniques. Then a layer of InSb thin film (thickness 2 microns) is grown on the sinusoidal surface of the substrate surface by laser deposition technology. This multi-channel terahertz filter has five resonant modes obtained in the electromagnetic wave frequency range of 0.1 to 3 terahertz, namely: 0.40 terahertz, 0.80 terahertz, 1.20 terahertz, 1.60 terahertz and 2.00 terahertz, When the ambient temperature decreases from 325K to 225K, these five resonance frequencies basically do not change with temperature, but their transmittance increases with the decrease of temperature, and the transmittance can reach up to 90%. Therefore, this multi-channel terahertz filter, in which the film thickness does no...

Embodiment 3

[0032] In embodiment 3, the substrate is selected as high-impedance single crystal silicon, and the film material is undoped indium antimonide (InSb). The surface of the substrate was made into a sinusoidal surface shape (period 600 microns, surface undulation amplitude 120 microns) by photolithography. Then a layer of InSb thin film (thickness 2.0 microns) is grown on the sinusoidal surface of the substrate by laser deposition technology. This multi-channel terahertz filter has five resonant modes obtained in the electromagnetic wave frequency range of 0.1 to 3 terahertz, namely: 0.50 terahertz, 1.00 terahertz, 1.50 terahertz, 2.00 terahertz and 2.50 terahertz, When the ambient temperature decreases from 325K to 225K, these five resonance frequencies basically do not change with temperature, but their transmittance increases with the decrease of temperature, and the transmittance can reach up to 93%. Therefore, this multi-channel terahertz filter, in which the film thickness...

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Abstract

The invention discloses an ultrathin multichannel terahertz wave filter with temperature regulation; in the wave filter, a curved surface is constructed on the surface of a high-impedance monocrystalline silicon or a gallium arsenide underlay; then, a layer of an indium antimonide film grows on the curved surface of the underlay; the thickness of the film material is ultrathin (the total thickness does not exceed 2.15 microns); the multichannel terahertz wave filter obtains five resonant transmission peaks within the frequency range between 0.1 and 3 terahertz; the resonant transmission frequency is not changed along the temperature basically; the transmissivity of five resonant modes is increased along the temperature fall; and the transmissivity reaches as high as 90 to 93 percent.

Description

1. Technical field [0001] The invention belongs to the field of photoelectric information functional materials, and in particular relates to an ultra-thin multi-channel terahertz filter with temperature regulation. 2. Background technology [0002] It is well known that the terahertz frequency range lies at the intersection of electronics and photonics. In recent years, with the rapid development of ultrafast laser technology, terahertz radiation imaging technology and time-domain spectroscopy technology have broad application prospects in biomedicine, safety inspection, industrial non-destructive testing, space physics, chemical analysis, military, communications and other fields . People hope to design some terahertz devices that can select frequencies in the terahertz band and have adjustable multi-channel filtering functions. For example, in 2008, Dr. T.H.Isaac's research group at Exeter University in the UK developed a terahertz device with multi-channel filtering fun...

Claims

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Application Information

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IPC IPC(8): H01P1/20
Inventor 彭茹雯吴昕高峰胡青李德林涛王牧
Owner NANJING UNIV
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