Chemical and mechanical polishing liquid for semiconductor indium antimonide

An indium antimonide chemical and mechanical polishing technology is applied in the field of polishing liquid, which can solve the problems of increasing the content of metal ions in the polishing liquid, affecting the performance of devices, and having less chelating rings, achieving low hardness, solving cleaning difficulties, and low product viscosity. Effect

Inactive Publication Date: 2006-11-08
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sodium hypochlorite will introduce sodium ions, form ion contamination, and affect device performance, which is very unfavorable for production and will cause serious environmental pollution
[0006] In addition, most of the existing chelating agents use chelating agents

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Prepare 5000ml of InSb polishing solution.

[0028] Add organic base: 75ml of hydroxyethylethylenediamine, active agent: 40ml of O-20, chelating agent: 5ml of FA / O, oxidant: 100ml of hydrogen peroxide. The particle size is 10nm, sio 2 Concentration is 30% silica sol 4780ml.

[0029] First, stir the silica sol evenly; then add the above-mentioned amount of hydroxyethylethylenediamine, O-20 active agent, FA / O chelating agent under continuous stirring, and finally add hydrogen peroxide, and stir evenly to obtain InSb polishing liquid.

[0030] The pH of the polishing solution is 12.

[0031] After polishing, no scratches were observed on the surface, and the roughness was 0.5nm.

Embodiment 2

[0033] Prepare 5000ml of InSb polishing solution.

[0034] Add organic base: 75ml of hydroxyethylethylenediamine, active agent: 40ml of O-20, chelating agent: 5ml of FA / O, oxidant: 100ml of hydrogen peroxide. The particle size is 50nm, sio 2 Concentration is 2780ml of 30% silica sol, 2000ml of deionized water.

[0035] First, stir the silica sol evenly; then add the above-mentioned amount of hydroxyethylethylenediamine, O-20 active agent, FA / O chelating agent under continuous stirring, and finally add hydrogen peroxide, and stir evenly to obtain InSb polishing liquid.

[0036] The pH value of the polishing solution is 11.5.

[0037] After polishing, no scratches were observed on the surface, and the roughness was 0.7nm.

Embodiment 3

[0039] Prepare 5000ml of InSb polishing solution.

[0040] Add organic base: 75ml of hydroxyethylethylenediamine, active agent: 40ml of O-20, chelating agent: 25ml of FA / O, oxidant: 100ml of hydrogen peroxide. The particle size is 30nm, sio 2 Concentration is 30% silica sol 3780ml, deionized water 975ml.

[0041] First, stir the silica sol evenly; then add the above-mentioned amount of hydroxyethylethylenediamine, O-20 active agent, FA / O chelating agent under continuous stirring, and finally add hydrogen peroxide, and stir evenly to obtain InSb polishing liquid.

[0042] The pH value of the polishing solution is 11.7.

[0043] After polishing, no scratches were observed on the surface, and the roughness was 0.6nm.

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Abstract

The present invention discloses a kind of chemical and mechanical polishing liquid for polishing semiconductor indium antimonide, and the polishing liquid has organic alkali to replace inorganic alkali, increased chelating agent and activator to result in less scoring and high flatness of indium antimonide surface. The polishing liquid of the present invention consists of silica sol of SiO2 concentration 30-50% in 50-98 vol%, amine alkali 0.1-1.5 vol%, chelating agent 0.1-0.5 vol%, surfactant 0.5-2 vol%, oxidant 0.5-2 vol% and deionized water for the rest. The present invention has less scoring in the surface of indium antimonide, lowered surface roughness of indium antimonide and simple post cleaning.

Description

technical field [0001] The invention relates to a polishing liquid, more specifically, to a chemical mechanical polishing liquid with high concentration, small particle size and high activity suitable for indium antimonide materials. Background technique [0002] The InSb staring infrared focal plane device with a response in the 1-5.5um band has the advantages of high sensitivity (compared to PtSi), mature technology (compared to MCT), and good cost-effectiveness. At present, it occupies a dominant position in the field of military staring infrared. Examples include the U.S. ballistic missile defense system and several key conventional tactical weapons systems. InSb focal plane devices are widely used in guidance and thermal imaging devices. In terms of civil use, InSb thermal imaging technology is widely used in medical diagnosis, fire protection, rescue, industrial monitoring, forest protection and other fields. In air-to-air imaging guidance applications, the 64×64 el...

Claims

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Application Information

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IPC IPC(8): C09G1/14
Inventor 刘玉岭刘承霖
Owner HEBEI UNIV OF TECH
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