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Terahertz isolator of magnetic surface plasma waveguide

A surface plasmon and plasma technology, applied in the field of terahertz applications, to achieve the effect of enhancing one-way transmission performance, improving operating frequency and bandwidth

Inactive Publication Date: 2013-02-06
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problems existing in existing terahertz isolators, the purpose of the present invention is to provide a terahertz isolator with high isolation and adjustable magnetic field and its control method

Method used

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  • Terahertz isolator of magnetic surface plasma waveguide
  • Terahertz isolator of magnetic surface plasma waveguide
  • Terahertz isolator of magnetic surface plasma waveguide

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Embodiment Construction

[0023] The working process of the present invention is illustrated by an example of a magnetic surface plasmon waveguide terahertz isolator working near a frequency of 1THz:

[0024] The device structure and the direction of the external magnetic field such as figure 1 As shown, the surface plasmon waveguide is composed of the gap between the metal wall and the semiconductor pillar array. The incident THz wave is transmitted along the waveguide, and its polarization direction is TM wave, that is, the direction of the electric field vector is in the x-y plane. The wave incident from the forward input end 5 is regarded as forward transmission, and the wave incident from the reverse input end 6 is regarded as reverse transmission. The height of the semiconductor column is greater than 100 μm, the column width is 60 μm, the distance between the centers of adjacent columns is 100 μm, the distance between the edge of the column and the metal wall is 50 μm, and the number of columns ...

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Abstract

The invention discloses a terahertz isolator device of a magnetic surface plasma waveguide and a control method thereof. The asymmetric and periodic surface plasma waveguide is formed by a metal wall and a semiconductor indium antimonide pillar array. By exerting an external magnetic field under low temperature, the indium antimonide shows the revolving electrical property, and the structure can generate a magnetic surface plasma mode, so that the function of unidirectional isolation transmission of the terahertz wave can be achieved. The unidirectional transmission working frequency range is higher than 1THz, the bandwidth is larger than 80 GHz, the isolation reaches 90dB, the insertion loss is lower than 0.25dB, and tuning on the working frequency range can be performed by controlling the external magnetic field strength. Under the temperature of 186K, the frequency of the external magnetic field can be adjusted to 0.7T from 0.1T, and the central working frequency of a unidirectional transmission frequency band of the device can be tuned to 1THz from 1.42THz. The terahertz isolator is low in loss, high in isolation, tunable in broadband and capable of reducing echo and scattered noises in a terahertz application system and improving transmission quality of the terahertz beam.

Description

technical field [0001] The invention belongs to the technical field of terahertz applications, and in particular relates to an adjustable terahertz wave isolator and a control method thereof. Background technique [0002] Terahertz (THz, 1THz=10 12 THz) waves refer to electromagnetic waves with a frequency in the range of 0.1-10 THz (corresponding to a wavelength of 3 mm to 30 μm). This band is between microwaves and light waves, and is the cross field of electronics and photonics. Due to its special position in the electromagnetic spectrum, THz waves have many superior characteristics such as perspective, safety, and high signal-to-noise ratio, and have very important academic and application values ​​in the fields of spectroscopy, imaging, and communication. However, due to the lack of low-loss, broadband unidirectional transmission devices in the THz band for a long time, such as isolators, circulators, etc., the reflected echo and scattered noise of the components in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/36
Inventor 范飞常胜江
Owner NANKAI UNIV
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