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Indium antimonide thin film terahertz metasurface and thermal tuning method and preparation method thereof

An indium antimonide and terahertz technology, applied in the field of terahertz waves, can solve problems such as small tuning range, damage, and material deformation, and achieve the effects of simple preparation method, increased tuning range, and increased application range

Active Publication Date: 2019-04-26
BEIJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

For example, the metasurface made of liquid crystal is tuned by voltage, and the metasurface made of elastic material is tuned by mechanical pressure. However, limited by the voltage adjustable range of the liquid crystal material, the above voltage tuning method has the problem of small tuning range. Moreover, the mechanical pressure tuning method has the problem of easily deforming or even damaging the material

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  • Indium antimonide thin film terahertz metasurface and thermal tuning method and preparation method thereof
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  • Indium antimonide thin film terahertz metasurface and thermal tuning method and preparation method thereof

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] An embodiment of the present invention provides a terahertz metasurface based on an indium antimonide thin film, including:

[0030] A rectangular substrate layer, a pillar array structure layer, and an indium antimonide thin film, wherein each pillar array structure in the pillar array structure layer is arranged on the rectangular substrate layer. figure 1 It is a schematic structural diagram of a terahertz metasurface based on an indium antimonide th...

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Abstract

The embodiment of the invention provides an indium antimonide thin film terahertz metasurface and a thermal tuning method and preparation method thereof. The terahertz metasurface is arranged to be ofa three-layer structure comprising a rectangular substrate layer, a column array structure layer and an indium antimonide thin film so that the dielectric constant of the indium antimonide thin filmcan be changed along with temperature change, and the resonance frequency of the terahertz metasurface is changed. Therefore, the terahertz metasurface can change the resonance frequency by changing the temperature, and meanwhile, the tuning range of the terahertz wave resonance frequency is enlarged. The terahertz metasurface is simple in preparation method and suitable for being widely applied to the field of photoelectric manufacturing, so that the application range of the terahertz metasurface is widened.

Description

technical field [0001] The invention relates to the technical field of terahertz waves, in particular to an indium antimonide thin-film terahertz metasurface, a thermal tuning method, and a preparation method thereof. Background technique [0002] Terahertz waves, also known as THz rays, refer to electromagnetic waves with frequencies ranging from 0.1THz to 10THz. Terahertz waves are widely used in sensing, imaging, biomedicine and other fields. However, compared with infrared rays or microwaves, the development of terahertz waves is relatively slow, because it is difficult to find materials in nature that can be directly used to detect terahertz waves. However, with the emergence and development of metamaterials, this problem has gradually been solved. Metamaterials are artificial composite structures or composite materials with extraordinary physical properties that natural materials do not have. Among them, the metasurface is a two-dimensional equivalent metamaterial. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/00G02F1/00
Inventor 杨大全张超李小刚兰楚文
Owner BEIJING UNIV OF POSTS & TELECOMM
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