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Temperature-sensitive-type terahertz detector based on phase change material and preparation method

A technology of terahertz detectors and phase change materials, which is applied in the field of terahertz photodetectors to achieve high sensitivity response, simple manufacturing process, and increase the effect of sensing ambient temperature

Active Publication Date: 2019-12-27
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, most of the researches on terahertz devices based on phase-change material modulation still only focus on the influence of temperature on optical transmission-reflection curves, and do not directly involve the research on terahertz detection devices.

Method used

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  • Temperature-sensitive-type terahertz detector based on phase change material and preparation method
  • Temperature-sensitive-type terahertz detector based on phase change material and preparation method
  • Temperature-sensitive-type terahertz detector based on phase change material and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0032]1. Select (111) crystal direction undoped single throw indium antimonide single crystal material, use epoxy resin glue to paste the single throw surface of the indium antimonide material sample on the amorphous alumina substrate 3, mechanically thin, The thickness of the indium antimonide single crystal is reduced to 10 microns. The photoresist AZ 4330 is selected, and the photolithography pattern is obtained after the photolithography process such as uniform layer exposure, development, and post-baking. Wet etching is carried out first, and an etching solution is prepared according to the ratio of HF: HAC: H2O2 = 1:1:1 to obtain an indium antimonide mesa with an etching depth of about 8um. Dry etching is then performed to remove the remaining 2um indium antimonide material layer. So far, an indium antimonide sensitive cell 1 mesa with a thickness of 10 um and a size of 90 um×20 um (length×width) has been obtained. Clean the sample sheet again with acetone, alcohol, an...

Embodiment 2

[0038] 1. Select (111) crystal direction undoped single throw indium antimonide single crystal material, use epoxy resin glue to paste the single throw surface of the indium antimonide material sample on the amorphous alumina substrate 3, mechanically thin, The thickness of the indium antimonide single crystal is reduced to 10 microns. The photoresist AZ 4330 is selected, and the photolithography pattern is obtained after the photolithography process such as uniform layer exposure, development, and post-baking. Wet etching is carried out first, and an etching solution is prepared according to the ratio of HF: HAC: H2O2 = 1:1:1 to obtain an indium antimonide mesa with an etching depth of about 8um. Dry etching is then performed to remove the remaining 2um indium antimonide material layer. So far, the indium antimonide sensitive element 1 mesa with a thickness of 10 um and a size of 120 um×20 um (length×width) has been obtained. Clean the sample sheet again with acetone, alcoh...

Embodiment 3

[0044] 1. Select (111) crystal direction undoped single throw indium antimonide single crystal material, use epoxy resin glue to paste the single throw surface of the indium antimonide material sample on the amorphous alumina substrate 3, mechanically thin, The thickness of the indium antimonide single crystal is reduced to 10 microns. The photoresist AZ 4330 is selected, and the photolithography pattern is obtained after the photolithography process such as uniform layer exposure, development, and post-baking. Wet etching is carried out first, and an etching solution is prepared according to the ratio of HF: HAC: H2O2 = 1:1:1 to obtain an indium antimonide mesa with an etching depth of about 8um. Dry etching is then performed to remove the remaining 2um indium antimonide material layer. So far, an indium antimonide sensitive cell 1 mesa with a thickness of 10 um and a size of 140 um×20 um (length×width) has been obtained. Clean the sample sheet again with acetone, alcohol, ...

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Abstract

The invention discloses a temperature-sensitive-type terahertz detector based on phase change material and a preparation method. The detector is composed of an alumina substrate, an indium antimonide-sensitive element, a vanadium dioxide grating structure layer, a half-wave antenna and a device socket. According to the temperature-sensitive-type terahertz detector prepared according to the invention, the vanadium dioxide grating structure layer is introduced on the basis of a traditional metal-semiconductor-metal structure, the phase change transition characteristic of vanadium dioxide at an ambient temperature of 68 DEG C is used, thus a drastic change of conductivity of the grating structure layer is caused, then field enhancement effects caused by local plasmons of the whole device areenabled to be different, and a modulation purpose of terahertz wave detection is achieved; and a new function of sensing the ambient temperature is added while fast highly-sensitive response of a widewave band of 0.01- 3THZ is realized. The detector has very important significance for both device structure design optimization and device function perfection, and can play important roles in the fields of science, technology and the like.

Description

technical field [0001] The invention relates to the field of terahertz photodetectors, more specifically, to a temperature-sensitive terahertz detector based on a phase change material and a preparation method. Background technique [0002] Terahertz wave is an electromagnetic wave with a wavelength between microwave and infrared. Its frequency range is 0.1-10THz. It has the characteristics of good orientation, strong penetration, and high safety. It has been widely used in communications, medical diagnosis, environmental testing etc. Due to the generally low power of terahertz radiation sources and the increasing demand for multifunctional integration of detectors, the development of terahertz detectors with higher sensitivity, high responsivity, and multifunctionality has become one of the current research hotspots. one. [0003] In recent years, the development of metamaterials has laid the foundation for the study of multifunctional modulated terahertz detectors. Taki...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/44G01J1/42G01K7/00H01L31/10H01L31/18
CPCG01J1/44G01J1/4257G01K7/00H01L31/10H01L31/18Y02P70/50
Inventor 黄志明胡涛张惜月陈允枫张志博阎蒋伟潘昌翊谢浩王广艳
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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