This invention proposes a circularly polarized
photodetector based on a triangular ferroelectric nanoisland structure and its fabrication method, belonging to the technical field of ferroelectric materials. It addresses the problems of traditional spintronic devices, such as reliance on external magnetic fields, low energy efficiency, complex structures, and insufficient sensitivity of existing circularly polarized photodetectors. The circularly polarized
photodetector of this invention consists of a bottom
electrode, a substrate, a ferroelectric layer, and a top
electrode stacked sequentially from bottom to top. The substrate is an Nb-doped SrTiO3 substrate, and the ferroelectric layer is an Eu-doped BiFeO3 thin film. The Nb-doped SrTiO3 substrate and the Eu-doped BiFeO3 thin film form a p-n
heterojunction. This invention achieves self-driven detection without an
external bias voltage, effectively suppresses
dark current, and significantly improves the axial selectivity response of circularly polarized light by utilizing the synergistic effect of the chiral geometry of the nanoislands and intrinsic spin splitting. The fabrication process is mature and facilitates large-scale integration applications.