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Chemical corrosion method of manganese doped gallium antimonide monocrystalline

A chemical corrosion, gallium antimonide technology, applied in the field of semiconductor material physics and chemistry, can solve the problem of no chemical corrosion and achieve good repeatability

Inactive Publication Date: 2010-10-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is little international research on manganese-doped gallium antimonide single crystal, so there has been no chemical etching method for this material.

Method used

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  • Chemical corrosion method of manganese doped gallium antimonide monocrystalline
  • Chemical corrosion method of manganese doped gallium antimonide monocrystalline

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Embodiment Construction

[0018] see figure 1 Shown, the chemical etching method of a kind of manganese-doped gallium antimonide single crystal of the present invention, comprises the following steps:

[0019] Step 1 (S10): Take a single wafer body, and use polishing powder to mechanically polish the single wafer body, wherein the material of the single wafer body is manganese-doped gallium antimonide, wherein the mechanical polishing is manual polishing , the polishing powder used is: Al 2 o 3 , to remove the cut marks on the surface of the single wafer.

[0020] The details that need to be paid attention to during the mechanical polishing process of single crystal include the following aspects. Before polishing, add water to the polishing powder, filter it with gauze, and use the filtered powder for polishing. This is mainly to filter out the large particles in the polishing powder, and try to avoid introducing new wear marks during mechanical polishing. When grinding, proceed in the order of ro...

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Abstract

The invention provides a chemical corrosion method of manganese doped gallium antimonide monocrystalline, comprising the following steps: step one, taking a monocrystalline sheet, and performing mechanical polishing on the monocrystalline sheet by polishing powder; step two, performing chemical polishing on the monocrystalline sheet after mechanical polishing by a reagent; and step three, preforming chemical corrosion on the monocrystalline sheet after mechanical polishing and chemical polishing.

Description

technical field [0001] The invention belongs to the field of semiconductor material physics and chemistry, and in particular relates to a method for displaying defects and growth stripes of manganese-doped gallium antimonide single crystal. The invention can conveniently, quickly and effectively display defects such as dislocations and grain boundaries and growth stripes in the manganese-doped gallium antimonide single crystal by using chemical reagents and certain experimental methods. Background of the invention [0002] In recent years, with the development of spintronics, the research of dilute magnetic semiconductor materials has become a hot spot. By doping magnetic transition metal elements or rare earth metal elements into semiconductors to form semiconductor materials with certain magnetic properties, it shows unique physical phenomena and broad application prospects. [0003] The preparation methods of dilute magnetic semiconductor materials are mainly thin film g...

Claims

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Application Information

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IPC IPC(8): G01N1/32C30B33/10C30B29/40C23F1/30
Inventor 陈晓锋陈诺夫吴金良张秀兰柴春林俞育德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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