Method for epitaxial generation of gallium antimonide on gallium arsenide substrate

A technology of epitaxial growth and gallium antimonide, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high dislocation density, low peak intensity, poor crystal quality, etc., and achieve the reduction of density and screw position The effect of reducing the error density and increasing the strength

Inactive Publication Date: 2008-06-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are the following disadvantages: due to the lattice mismatch of about 7% between the GaAs substrate and the GaSb epitaxial layer, GaSb grows in a three-dimensional island shape, and the obtained GaSb material has a rough surface, high dislocation density, and poor crystal quality
[0006] However, the test ...

Method used

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  • Method for epitaxial generation of gallium antimonide on gallium arsenide substrate
  • Method for epitaxial generation of gallium antimonide on gallium arsenide substrate
  • Method for epitaxial generation of gallium antimonide on gallium arsenide substrate

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Embodiment 1

[0069] After high-temperature deoxidation and degassing of the cleaned GaAs substrate, the temperature of the GaAs substrate is lowered to 580°C, the Ga source furnace shutter is opened, the Ga source temperature is 1150°C, and the GaAs high-temperature buffer layer is crystallized on the GaAs substrate grow. The growth time of the GaAs buffer layer is 30 minutes, and the thickness is 0.5 μm. The molecular beam epitaxy growth chamber pressure is 5×10 -9 mbar.

[0070] Then close the Ga source furnace shutter, lower the substrate temperature to about 550°C, close the As source furnace shutter, open the Sb source furnace shutter, open the Al source furnace shutter, the Al source temperature is 1180°C, and grow a low-temperature AlSb buffer on the GaAs buffer layer. layer, the growth time is 12 minutes, and the thickness is about 100nm. The molecular beam epitaxy growth chamber pressure is 5×10 -9 mbar.

[0071] Then close the shutter of the Al source furnace, lower the subs...

Embodiment 2、3

[0074] The GaSb / AlSb superlattices of different period numbers are 20 (C), 30 (D) respectively, all the other are the same as embodiment 1. The PL spectrum measured under 10K is as follows image 3 shown.

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Abstract

The invention discloses a method of the epitaxial growth GaSb on a gallium arsenide substrate. A three buffer layers growth process is adopted in the method. The method specifically comprises the following steps: firstly, a GaAs buffer layer grows on a GaAs substrate under the condition of 580 DEG C; secondly, an AlSb buffer layer grows on the grown GaAs buffer layer under the condition of 550 DEG C; thirdly, a GaSb/AlSb super crystal lattice buffer layer grows on the AlSb buffer layer under the condition of 450 DEG C; fourthly, a GaSb epitaxial layer grows on the GaSb/AlSb super crystal lattice buffer layer under the condition of 400 to 500 DEG C. By utilizing the invention, a doublebuffer layer process is changed into a three-buffer layer process, firstly the GaAs buffer layer grows on the GaAs substrate, then the AlSb buffer layer grows on the grown GaAs buffer layer, the GaSb/AlSb super crystal lattice buffer layer grows on the AlSb buffer layer, finally the GaSb epitaxial layer grows on the GaSb/AlSb super crystal lattice buffer layer, and the perforating dislocation is reduced effectively, thereby the optical quality of the GaSb epitaxial layer is enhanced.

Description

technical field [0001] The invention relates to gallium antimonide (GaSb) crystal epitaxial growth technology, in particular to a method for epitaxially growing GaSb on a gallium arsenide (GaAs) substrate by adopting a three-buffer layer growth process. Background technique [0002] GaSb-based semiconductor material (lattice constant is InAs, GaSb, AlSb and their ternary compounds), both in terms of optical and electrical properties, they make up for the shortcomings of traditional semiconductor materials, and are ideal for preparing high-speed, low-power electronic devices-high electron mobility transistors (HEMTs) ) or new materials of choice for mid-to-far infrared detectors and lasers (InAs / GaSb, superlattice infrared detectors and lasers). [0003] Although GaSb single wafers have been commercialized, GaSb epitaxial layers are usually prepared on GaAs substrates due to the disadvantages of high cost and lack of semi-insulating substrates. In the heteroepitaxy process...

Claims

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Application Information

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IPC IPC(8): H01L21/203
Inventor 郝瑞亭周志强任正伟徐应强牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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