Method for generating a classification neural network (CNN) model for reliability states of a
flash memory device (33) that can be read by sending a
threshold voltage shift read instruction (24) to the
flash memory device (33) which includes a
threshold voltage shift offset (TVSO) value for each
threshold voltage region required to read the
flash memory device (33), wherein the method comprises: Receiving (102) an input specifying a framework for the reliability state CNN model, wherein the framework includes test criteria and a training
algorithm; Receiving (103) training data files that specify for each of a plurality of different word lines a Flash
Characterization Test Error (FCT-ERROR) value, which specifies a number of Flash
Characterization Test Errors, wherein a marker specifies one of a plurality of reliability states and a set of minimum threshold
voltage shift offset (TVSOmin) values; Performing (105) the training to generate the reliability state CNN model using a training dataset that includes the received training data files, wherein the reliability state CNN model is configured to predict the reliability state of the flash storage device (33); Testing (106) the reliability state CNN model to determine whether the reliability state CNN model can predict each of the reliability states using the training
data set, the testing including determining whether the test criteria are met for each of the reliability states; If the trained neural classification
network model fails to meet the test criteria for a particular reliability state, remove (108) from the training data files corresponding to the reliability state that fails to meet the test criteria in a particular TVSO region, from training data files with a non-zero TVSO value to form an updated training dataset, and repeat the training and testing using the updated training dataset; and If test criteria for each of the reliability states are met, save (109) configuration files for the reliability state CNN model.