Rheotaxial preparation method of gallium antimonide quantum dot

A liquid phase epitaxy, gallium antimonide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high toxicity and high cost, and achieve low production cost, wide application prospects, and uniform size distribution. Effect
CN102347221AInactive Publication Date: 2012-02-08SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Publication Date
2012-02-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a rheotaxial preparation method of a gallium antimonide quantum dot. The method comprises the steps of rapidly pushing a growth source with an overcooling degree from the surface of a gallium arsenide substrate through a drive motor; and consequently forming a material structure of the gallium antimonide quantum dot on the surface of the substrate due to the lattice mismatch between the material of the quantum dot and the surface of the substrate. The preparation method provided by the invention is simpler and lower in cost, and the problems in high cost and high toxicity in the prior art are solved.
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Description

technical field

[0001] The invention relates to a preparation method of gallium antimonide quantum dot material, in particular to a liquid phase epitaxy preparation method of gallium antimonide quantum dot, which is widely used in solar devices, information function devices and the like. Background technique

[0002] In recent years, people have been looking for a material system that can more effectively improve the efficiency of solar cells. Theoretical calculations show that the efficiency of solar cells with GaAs / GaSb quantum dots / GaAs composite structures can reach 44.5%. Therefore, GaSb quantum dot composite solar cells have attracted great attention. At present, the preparation of GaSb quantum dot materials mainly adopts two methods: molecular beam epitaxy (MBE) and low pressure-organic metal chemical vapor deposition (LP-MOCVD):

[0003] (1) Growth of GaSb quantum dots by molecular beam epitaxy

[0004] The technology of growing GaSb quantum dots by molecular beam ...

Claims

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