Surface cleaning method of gallium antimonide substrate and second-type antimonide-base superlattice material

Abstract

The invention relates to a surface cleaning method of a gallium antimonide substrate and a second-type antimonide-base superlattice material. The method includes the steps of packing a sample into a high-vacuum chamber, wherein the vacuum degree is higher than 1*10 <-6> Torr; raising the temperature of the sample to a target temperature value and maintaining the temperature of the sample; releasing a beam of an atomic hydrogen source to cover the sample continuously for 1-50 minutes till oxidative products on the surface of the sample are completely removed, wherein the vacuum degree is 1*10 <-6> - 1*10 <-5> Torr during the process; closing the atomic hydrogen source, and executing a subsequent material generation process in the same vacuum system. According to the surface cleaning method,at a low temperature, through assistance of the atomic hydrogen, an oxidation layer and other remaining impurities on the surface are removed, so that damage caused by high temperature to the material surface or each interface of the superlattice can be avoided; the surface roughness of the material is low after cleaning, the subsequent generation of the material is greatly facilitated, and higher interface quality can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, in particular to a surface cleaning method for gallium antimonide substrates and antimonide-based type II superlattice materials, which can be applied to cleaning gallium antimonide substrates and antimonide-based II superlattice materials. The surface oxide layer and impurities of superlattice-like materials. Background technique [0002] Gallium antimonide (GaSb) substrates are often used to prepare semiconductor optoelectronic devices in the infrared band, such as infrared lasers, infrared detectors, solar cells, and the like. Since GaSb is easily oxidized in the air, before growing materials on GaSb substrates, the oxide layer and other residual impurities on the surface must be removed in a high vacuum environment, otherwise it will affect the growth quality of subsequent materials, thereby reducing the manufacturing efficiency. device performance. [0003] Anti...

AI Technical Summary

Problems solved by technology

Antimonide-based type II superlattice materials are two or more binary or multi-component compound semiconductor thin layers based on InAs and GaSb, which are periodically and repeatedly deposited according to a certain design sequence. These antimonide and arsenide materials are in It is easy to be oxidized in the air, so before regrowing other passivation materials on the etched superlattice material, the oxide layer and other residual impurities on the surface must be removed in a high vacuum environment, otherwise it will seriously affect the quality of subsequent materials. Quality, and will introduce interface states to increase leakage or non-radiative recombination, reducing device performance

[0004] Ordinary high-temperature deoxidation method can remove the surface oxide layer of GaSb substrate and antimonide-based type II superlattice material. However, this method requires a temperature of 500 degrees Celsius or above, and such a high temperature will damage the surface of the GaSb substrate and increase its Surface roughness, or damage to the interface between layers of superlattice materials, so it is very necessary to develop a surface cleaning process at a lower temperature