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Method for making gallium arsenide/gallium stibide laminated focusing solar battery

A technology of solar cells and gallium arsenide, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of difficult space heat dissipation, complex day tracking mechanism, and high cost, and achieve low investment, high solar energy utilization, and long life. Effect

Inactive Publication Date: 2007-01-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

However, the main difficulty is that the cost is relatively high, the tracking mechanism for the sun is very complicated, and the space heat dissipation is very difficult

Method used

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  • Method for making gallium arsenide/gallium stibide laminated focusing solar battery

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Experimental program
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Effect test

Embodiment

[0040] (1): The top cell is based on a semi-insulating gallium arsenide single wafer;

[0041] (2): Using metal organic compound vapor deposition (MOCVD), molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) growth techniques to grow solar cell epitaxial wafers. The bottom layer of epitaxial growth is heavily doped n + - GaAs layer;

[0042] (3): The positive electrode is made on the epitaxial wafer of the top cell; the n above the semi-insulating gallium arsenide (SI-GaAs) substrate + -GaAs layer to make the back electrode of the top cell;

[0043] (4): Make a positive electrode on the epitaxial wafer of the bottom cell, and make a back electrode under the substrate;

[0044] (5): The top cell and the bottom cell are mechanically cascaded to make a mechanical laminated solar cell;

[0045] (6): Welding, testing, assembly, packaging, and comprehensive testing of solar cell components after packaging;

[0046](7): Use a bracket to install a concentrating device and ...

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Abstract

The invention is a method for making a gallium arsenide / gallium antimonide laminated light-collecting solar battery, comprising the steps of: a top battery uses semi-insulating gallium arsenide single crystal plate as substrate; growing an epitaxial plate by organometallic compound gas phase precipitation, molecular beam epitaxial growth technique and liquid phase epitaxial growth technique; making positive electrode on the gallium arsenide layer of the epitaxial plate of the top battery; making back electrode of the top battery on the heavy-doped n-type gallium arsenide layer on the bottom layer of the epitaxial plate; a bottom battery uses gallium antimonide single crystal plate as substrate; making positive electrode on an epitaxial plate of the bottom battery and making back electrode on the bottom surface of the substrate; making the top and bottom batteries into a mechanically laminated solar battery in a mechanical cascade mode, and then packing; using a bracket to equip light collector and solar tracker on the right side of the battery, and equip cooler on the back of the battery.

Description

technical field [0001] The invention relates to a method for manufacturing gallium arsenide / gallium antimonide (GaAs / GaSb) mechanical lamination concentrator solar cells. Background technique [0002] Concentrating solar cells can concentrate light intensity several times or even thousands of times, which not only helps to improve conversion efficiency, but also high light intensity can also increase the fill factor of the cell; at the same time, cheap concentrating materials greatly improve the unit The electricity generated by the cells greatly reduces the cost of power generation and improves the competitiveness of photovoltaic power generation in space satellite power systems and ground photovoltaic power generation systems. According to a rough estimate, the cost of the concentrating solar cell system can be reduced by more than 80% compared with the non-concentrating solar cell system. Therefore, the concentrating solar cell has a good application prospect. [0003] M...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈诺夫白一鸣梁平王晓晖
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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