The invention relates to the technical field of
light emitting diode manufacturing, in particular to a method for improving the brightness of an LED
chip and a novel LED
chip. According to the method, the light emitted by the single LED
wafer is focused through the light reflecting
coating on the outer side of the single LED
wafer to improve the brightness of the LED
chip, and the light reflecting
coating wraps the other faces of the single LED
wafer except the side where the light rays are emitted. The light rays emitted by the LED chip are reflected by the reflective plating layer plated on the side surface of the single LED wafer, so that the LED chip can only emit the light rays from one surface, and the luminance of the LED chip is effectively improved. The LED chip comprises an
electrode, a light-emitting area and a structural layer, a back
gold layer is arranged on the side, away from the
electrode and the light-emitting area, of the structural layer, and the side, provided with the back
gold layer, of the structural layer and the adjacent side face are plated with side wall
evaporation layers. And one side and the adjacent side surface of the back
gold layer are plated with the side wall
evaporation layer, so that the light condensation effect of the LED chip is improved, and the brightness of the LED chip is improved.