Thermal coreduction preparation method of gallium antimonide nano-semiconductor solvent
A nano-semiconductor, gallium antimonide technology, applied in chemical instruments and methods, antimony compounds, inorganic chemistry, etc., can solve the problems of high expulsion activity, high reaction temperature, complicated preparation process, etc., and achieves simple equipment and lower reaction temperature. , the effect of mitigating conditions
Inactive Publication Date: 2006-01-11
GUILIN UNIVERSITY OF TECHNOLOGY
View PDF0 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Metal-organic compound vapor deposition (MOCVD) and molecular beam epitaxy (MBE) developed in recent years have been widely used in the preparation of thin films and superlattices of compound semiconductors, but these methods generally require high temperatures of 500-600 ° C, and due to The reaction temperature is high, the activity of the reaction precursor is high, and it often requires absolute anhydrous and oxygen-free operation, which makes the preparation process quite complicated
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreExamples
Experimental program
Comparison scheme
Effect test
Embodiment
[0014] will analyze pure GaCl 3 , SbCl 3 , reducing agent metallic sodium mixes with organic solvent benzene, and is transferred to autoclave (polytetrafluoroethylene lining, volume 100 milliliters, filling degree 85%), then reducing agent is added reaction kettle, and autoclave is placed in baking oven, keeps The temperature was 200°C for 40 hours, then cooled to room temperature, and the reaction mixture was filtered. The obtained precipitate was washed successively three times with xylene, absolute ethanol, 1 molar dilute hydrochloric acid and absolute ethanol. Finally, the black powder was dried in a vacuum dryer at 40° C. for 4 hours to obtain the GaSb nano-powder.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A process for preparing the nano-particles of GaSb semiconductor by solvent heat coreduction method includes such steps as reacting between CaCl3, SbCl3, reducer and solvent at 120-350 deg.C for 10-60 hr, cooling, filtering, washing and drying. Its advantages are less pollution and low reaction temp.
Description
technical field [0001] The invention relates to a semiconductor material preparation technology, in particular to a gallium antimonide nano semiconductor solvothermal co-reduction preparation method. Background technique [0002] The method for preparing VIII-V compound semiconductors is generally obtained by reacting molten elemental substances at high temperatures in the solid phase. Metal-organic compound vapor deposition (MOCVD) and molecular beam epitaxy (MBE) developed in recent years have been widely used in the preparation of thin films and superlattices of compound semiconductors, but these methods generally require high temperatures of 500-600 ° C, and due to The high reaction temperature and high activity of the reaction precursor often require absolute anhydrous and oxygen-free operation, which makes the preparation process quite complicated. In order to achieve lower preparation temperature and better control of grain shape and size, it is very necessary to see...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C01G30/00C01G15/00
Inventor 肖顺华任玮
Owner GUILIN UNIVERSITY OF TECHNOLOGY