Indium arsenide (InAs) quantum dot material modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb) and growing method thereof

A quantum dot material, gallium arsenide technology, applied in the field of indium arsenide quantum dot material and its molecular beam epitaxy growth, can solve the problem of uneven quantum dot size and deterioration of laser gain, and achieve the effect of uniform size distribution

Inactive Publication Date: 2009-12-02
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

At the same time, the size inhomogeneity of quantum dots seriously deteriorates the gain of the laser

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  • Indium arsenide (InAs) quantum dot material modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb) and growing method thereof
  • Indium arsenide (InAs) quantum dot material modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb) and growing method thereof
  • Indium arsenide (InAs) quantum dot material modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb) and growing method thereof

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[0026] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings.

[0027] figure 1 The indium arsenide quantum dot structure modulated by gallium arsenide and gallium antimonide covering layers of the present invention is given. The structure includes a substrate on which a GaAs transition layer 10 is formed by a well-known molecular beam epitaxy method. The substrate temperature is 580°C. , The thickness of the GaAs transition layer is controlled to 500nm. Then, the InAs self-assembled quantum dot layer 11 is grown by molecular beam epitaxy on the GaAs transition layer 10, the substrate temperature is controlled to 510° C., and the thickness is preferably 0.81 nm. Then the substrate temperature was controlled to 510°C, and the first GaAs covering layer 12 was grown by molecular beam epitaxy on the InAs self-assembled quantum dot layer 11, the thickness of the covering layer 12 was 0.84 nm, and GaSb was grown on the coveri...

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Abstract

The invention provides an Indium arsenide (InAs) quantum dot structure modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb), comprising a GaAs buffer layer, an InAs self-assembled quantum dot layer, a first GaAs covering layer, a GaSb covering layer and a second GaAs covering layer, which are subjected to molecular beam epitaxy (MBE) on a substrate. Room temperature photoluminescence of the quantum dot obtained by the material structure can reach over 1.3mu m and half-peak breadth thereof is only 20mev. The quantum dot has good dimensional homogeneity. In addition, the invention also discloses a manufacturing method of an epitaxial homogeneous quantum dot material structure with wavelength of 1.3mu m.

Description

Technical field [0001] The invention relates to an indium arsenide (InAs) quantum dot material modulated by a gallium arsenide (GaAs) and gallium antimonide (GaSb) cover layer and a molecular beam epitaxial growth method thereof. technical background [0002] The 1.3-micron semiconductor laser is a key optical device widely used in optical fiber communication systems. The current commercial product is an indium gallium arsenide phosphor (InGaAsP) / indium phosphide (InP) laser. Due to the small difference in refractive index between InGaAsP and InP, the limitation of carriers in the active region is insufficient, resulting in poor temperature stability of the laser. The characteristic temperature is only about 70K. At the same time, it is difficult to prepare a vertical cavity surface emitting type laser with InGaAsP / InP materials. Therefore, the study of new GaAs-based near-infrared luminescent materials is an important topic in the field of optoelectronics. Since the discovery of...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L33/00H01L27/15H01S5/343H01S5/00
Inventor 蒋中伟王文新陈弘周均铭郭丽伟贾海强李卫高汉超
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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