Indium arsenide (InAs) quantum dot material modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb) and growing method thereof

A quantum dot material, gallium arsenide technology, applied in the field of indium arsenide quantum dot material and its molecular beam epitaxy growth, can solve the problem of uneven quantum dot size and deterioration of laser gain, and achieve the effect of uniform size distribution
CN101593679AInactive Publication Date: 2009-12-02INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2009-12-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides an Indium arsenide (InAs) quantum dot structure modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb), comprising a GaAs buffer layer, an InAs self-assembled quantum dot layer, a first GaAs covering layer, a GaSb covering layer and a second GaAs covering layer, which are subjected to molecular beam epitaxy (MBE) on a substrate. Room temperature photoluminescence of the quantum dot obtained by the material structure can reach over 1.3mu m and half-peak breadth thereof is only 20mev. The quantum dot has good dimensional homogeneity. In addition, the invention also discloses a manufacturing method of an epitaxial homogeneous quantum dot material structure with wavelength of 1.3mu m.
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Description

Technical field

[0001] The invention relates to an indium arsenide (InAs) quantum dot material modulated by a gallium arsenide (GaAs) and gallium antimonide (GaSb) cover layer and a molecular beam epitaxial growth method thereof. technical background

[0002] The 1.3-micron semiconductor laser is a key optical device widely used in optical fiber communication systems. The current commercial product is an indium gallium arsenide phosphor (InGaAsP) / indium phosphide (InP) laser. Due to the small difference in refractive index between InGaAsP and InP, the limitation of carriers in the active region is insufficient, resulting in poor temperature stability of the laser. The characteristic temperature is only about 70K. At the same time, it is difficult to prepare a vertical cavity surface emitting type laser with InGaAsP / InP materials. Therefore, the study of new GaAs-based near-infrared luminescent materials is an important topic in the field of optoelectronics. Since the discovery of...

Claims

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