Polishing method for gallium antimonide monocrystal wafer

Abstract

The invention provides a polishing method for a gallium antimonide monocrystal wafer. The polishing method comprises the following step (1) of grinding both sides of the gallium antimonide monocrystalwafer to remove damage from the surface of the gallium antimonide monocrystal wafer; the step (2) of chemically and mechanically polishing the ground gallium antimonide monocrystal wafer by using polishing cloth coordinated with polishing solutions; and the step (3) of taking and cleaning the gallium antimonide monocrystal wafer after chemical mechanical polishing. According to the polishing method, through selection and optimization of the components and content of the polishing solutions, and the polishing cloth coordinated with the polishing solutions, one-step forming of polishing of thegallium antimonide monocrystal wafer is achieved, and three steps of rough polishing, medium polishing and fine polishing are not required; the process is simple, and the stability is high; the surface quality of the polished gallium antimonide monocrystal wafer is high, and the defects of scratches and fogging are avoided; the surface roughness is low; and the roughness value Ra can be less than0.15 nm.

Description

technical field

[0001] The invention belongs to the technical field of surface processing of semiconductor materials, and in particular relates to a gallium antimonide single wafer polishing method. Background technique

[0002] In recent years, infrared detectors developed with epitaxial antimonide II superlattice materials on GaSb substrates have shown excellent detection performance in the long-wave and very long-wave infrared bands, and have good performance in the fields of gas monitoring, night vision, and infrared imaging. application prospects.

[0003] Epitaxial growth of high-quality antimonide II superlattice materials puts forward high quality requirements for GaSb substrate materials, requiring substrate materials with low defect density, high lattice integrity, and epitaxial buffer layers with atomic-level flatness , which puts high demands on the surface quality of GaSb substrates, and its application depends on the development of polishing technology. [00...

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