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A kind of polishing method of gallium antimonide single wafer

A single-wafer, gallium antimonide technology, applied to polishing compositions containing abrasives, grinding/polishing equipment, grinding/polishing safety devices, etc. and other problems, to achieve the effect of low surface roughness, simple process and high surface quality

Active Publication Date: 2022-07-22
WUHAN GAOXIN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent CN106064326A provides a method for precise polishing of gallium antimonide single crystal substrates. The surface roughness is less than 0.3nm mainly through the three-step process of rough polishing, medium polishing and fine polishing. Among them, cerium oxide polishing cloth is used for rough polishing , black polyurethane polishing cloth is used for medium polishing, and black synthetic leather polishing cloth is used for fine polishing. The overall polishing process is complicated, with many operating steps, and it is easy to introduce surface defects

Method used

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  • A kind of polishing method of gallium antimonide single wafer

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Embodiment 1

[0033] (1) Remove the damage on the surface of the gallium antimonide single wafer; use quartz wax to evenly paste the gallium antimonide single wafer on the ceramic carrier and use natural curing, wipe off the excess quartz wax with alcohol, and then pass it through a grinding machine. Use 6000 mesh grinding wheel, 4000 rpm for double-sided grinding, and the removal amount is controlled to 40um.

[0034] (2) Chemical mechanical polishing: The polishing cloth is made of black synthetic leather, the velvet length of the polishing cloth is 225um, and the aperture of the polishing cloth is 50-90um.

[0035] The polishing liquid is made by mixing the following components according to the mass percentage: 50nm SiO 2 Suspended abrasive 1.2%, sodium dichloroisocyanurate 0.5%, sodium bicarbonate 2%, sodium pyrophosphate 0.25%, sodium benzenesulfonate 0.25%, and the balance is deionized water.

[0036] The technological parameters of the polishing process are as follows: the polishing...

Embodiment 2

[0040] The polishing process of the gallium antimonide single wafer provided in this embodiment is basically the same as the above-mentioned embodiment 1, except that the pile length of the polishing cloth is 350um, and the aperture diameter of the polishing cloth is 30-70um.

[0041] The polishing liquid is made by mixing the following components according to the mass percentage: 50nm SiO 2 Suspended abrasive 1.2%, sodium dichloroisocyanurate 0.25%, sodium bicarbonate 2%, sodium pyrophosphate 0.25%, sodium benzenesulfonate 0.25%, and the balance is deionized water.

[0042] The technological parameters of the polishing process are as follows: the polishing pressure is 200g / cm 2 , the polishing speed is 40-100 rpm, the polishing liquid flow is 30 mL / min, and the polishing time is 50 min.

Embodiment 3

[0044] The polishing process of the gallium antimonide single wafer provided in this embodiment is basically the same as that of the above-mentioned embodiment 1, except that the pile length of the polishing cloth is 225um, and the diameter of the polishing cloth is 50-90um.

[0045] The polishing liquid is made by mixing the following components according to the mass percentage: 50nm SiO 2 Suspended abrasive 1.2%, sodium dichloroisocyanurate 0.25%, sodium bicarbonate 2%, sodium pyrophosphate 0.25%, sodium benzenesulfonate 0.25%, and the balance is deionized water.

[0046] The technological parameters of the polishing process are as follows: the polishing pressure is 200g / cm 2 , the polishing speed is 70 rpm, the polishing liquid flow is 30 mL / min, and the polishing time is 50 min.

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Abstract

The present invention provides a method for polishing a gallium antimonide single wafer, which includes the following steps: 1) grinding both sides of the gallium antimonide single wafer to remove damage on the surface of the gallium antimonide single wafer; 2) grinding the surface of the gallium antimonide single wafer The gallium antimonide single wafer is chemically mechanically polished by using a polishing cloth and a polishing liquid; 3) the gallium antimonide single wafer after chemical mechanical polishing is removed and cleaned. By selecting and optimizing the composition and content of the polishing liquid and the polishing cloth matched with it, the invention realizes the one-step molding of the gallium antimonide single wafer polishing, without the need for three-step polishing of rough polishing, medium polishing and fine polishing. It is simple and stable, and the surface quality of the gallium antimonide single wafer after polishing is high, without scratches and fogging defects, and the surface roughness is low, and the roughness value Ra is less than 0.15nm.

Description

technical field [0001] The invention belongs to the technical field of surface processing of semiconductor materials, and in particular relates to a polishing method of a gallium antimonide single wafer. Background technique [0002] In recent years, infrared detectors developed with GaSb substrate material epitaxial antimonide type II superlattice materials have shown excellent detection performance in long-wave and very-long-wave infrared bands, and have good performance in gas monitoring, night vision, infrared imaging and other fields. application prospects. [0003] Epitaxial growth of high-quality antimonide type II superlattice materials puts forward high quality requirements for GaSb substrate materials, requiring substrate materials with low defect density, high lattice integrity, and atomic-level flatness. Epitaxial buffer layer , which puts forward high requirements on the surface quality of GaSb substrate, and its application depends on the development of polish...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B7/22B24B7/17B24B37/04B24B55/06C09G1/02
CPCB24B7/228B24B7/17B24B37/044B24B55/06C09G1/02
Inventor 黄立严冰梁红昱张冰洁张传杰刘伟华
Owner WUHAN GAOXIN TECH
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