Epitaxy growth method for gallium antimonide on gallium arsenide substrate

A technology of epitaxial growth and gallium arsenide, applied in the field of epitaxial growth of gallium antimonide crystal, can solve the problems of rough surface, poor crystal quality and high dislocation density of GaSb material, and achieve the improvement of crystal quality, surface flatness, and smooth surface. The effect of increasing the degree of dislocation and decreasing the dislocation density
CN101148776AInactive Publication Date: 2008-03-26INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2008-03-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

The process of epitaxially growing GaSb on GaAs substrate is one double buffering layer growing process including the following steps: 1. growing a buffering GaAs layer on GaAs substrate at 580 deg.c; 2. growing a buffering AlSb layer on the buffering GaAs layer at 550 deg.c; and 3. growing an epitaxial GaSb layer on the buffering AlSb layer at 400-500 deg.c. The double buffering layer growing process can promote the 2D growth of the epitaxial GaSb layer, and raise the crystal quality and surface smoothness of the epitaxial GaSb layer effectively.
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Description

technical field

[0001] The invention relates to the technical field of gallium antimonide (GaSb) crystal epitaxial growth, in particular to a method for epitaxially growing GaSb on a gallium arsenide (GaAs) substrate by using a double buffer layer growth process. Background technique

[0002] GaSb-based semiconductor materials (InAs, GaSb, AlSb and their ternary compounds with a lattice constant of 6.1 Ȧ), both in terms of optical and electrical properties, make up for the shortcomings of traditional semiconductor materials, and are ideal for preparing high-speed, low-power New materials of choice for high electron mobility transistors (HEMTs) or mid-to-far infrared detectors and lasers (InAs / GaSb, superlattice infrared detectors and lasers).

[0003] Although GaSb single wafers have been commercialized, GaSb epitaxial layers are usually prepared on GaAs substrates due to the disadvantages of high cost and lack of semi-insulating substrates. In the heteroepitaxy process, a ...

Claims

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