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Epitaxy growth method for gallium antimonide on gallium arsenide substrate

A technology of epitaxial growth and gallium arsenide, applied in the field of epitaxial growth of gallium antimonide crystal, can solve the problems of rough surface, poor crystal quality and high dislocation density of GaSb material, and achieve the improvement of crystal quality, surface flatness, and smooth surface. The effect of increasing the degree of dislocation and decreasing the dislocation density

Inactive Publication Date: 2008-03-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are the following disadvantages: due to the lattice mismatch of about 7% between the GaAs substrate and the GaSb epitaxial layer, GaSb grows in a three-dimensional island shape, and the obtained GaSb material has a rough surface, high dislocation density, and poor crystal quality

Method used

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  • Epitaxy growth method for gallium antimonide on gallium arsenide substrate
  • Epitaxy growth method for gallium antimonide on gallium arsenide substrate
  • Epitaxy growth method for gallium antimonide on gallium arsenide substrate

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Experimental program
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Effect test

Embodiment 1

[0055] After high-temperature deoxidation and degassing of the cleaned GaAs substrate, the temperature of the GaAs substrate is lowered to 580°C, the Ga source furnace shutter is opened, the Ga source temperature is 1150°C, and the GaAs high-temperature buffer layer is crystallized on the GaAs substrate grow. The growth time of the GaAs buffer layer is 30 minutes, and the thickness is 0.5 μm.

[0056] Then close the Ga source furnace shutter, lower the substrate temperature to about 550°C, close the As source furnace shutter, open the Sb source furnace shutter, open the Al source furnace shutter, the Al source temperature is 1180°C, and grow a low-temperature AlSb buffer on the GaAs buffer layer. layer, the growth time is 12 minutes, and the thickness is about 100nm.

[0057] Then close the shutter of the Al source furnace, lower the substrate temperature to 500°C, open the shutter of the Ga source furnace, and grow the epitaxial layer GaSb on the AlSb buffer layer. The surfa...

Embodiment 2、3

[0059] The epitaxial layer growth temperatures at lower temperatures were 460° C. and 480° C., and the rest were the same as in Example 1. The surface roughness measured by the atomic force microscope and the FWHM value measured by the DCXRD rocking curve are listed in Table 1.

[0060] Example

[0061] Table 1

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Abstract

The process of epitaxially growing GaSb on GaAs substrate is one double buffering layer growing process including the following steps: 1. growing a buffering GaAs layer on GaAs substrate at 580 deg.c; 2. growing a buffering AlSb layer on the buffering GaAs layer at 550 deg.c; and 3. growing an epitaxial GaSb layer on the buffering AlSb layer at 400-500 deg.c. The double buffering layer growing process can promote the 2D growth of the epitaxial GaSb layer, and raise the crystal quality and surface smoothness of the epitaxial GaSb layer effectively.

Description

technical field [0001] The invention relates to the technical field of gallium antimonide (GaSb) crystal epitaxial growth, in particular to a method for epitaxially growing GaSb on a gallium arsenide (GaAs) substrate by using a double buffer layer growth process. Background technique [0002] GaSb-based semiconductor materials (InAs, GaSb, AlSb and their ternary compounds with a lattice constant of 6.1 Ȧ), both in terms of optical and electrical properties, make up for the shortcomings of traditional semiconductor materials, and are ideal for preparing high-speed, low-power New materials of choice for high electron mobility transistors (HEMTs) or mid-to-far infrared detectors and lasers (InAs / GaSb, superlattice infrared detectors and lasers). [0003] Although GaSb single wafers have been commercialized, GaSb epitaxial layers are usually prepared on GaAs substrates due to the disadvantages of high cost and lack of semi-insulating substrates. In the heteroepitaxy process, a ...

Claims

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Application Information

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IPC IPC(8): C30B25/02C30B29/42
Inventor 郝瑞亭周志强任正伟徐应强牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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