Method for producing copper indium gallium diselenide (CIGS) solar battery absorption layer through evaporation method

A solar cell, copper indium gallium selenide technology, applied in the direction of vacuum evaporation plating, coating, circuit, etc., can solve the problems of increasing the complexity of the process, affecting the purity of raw materials, and high equipment requirements, and avoiding large differences in evaporation temperature. The effect of reducing impurity pollution and simple and easy process

Inactive Publication Date: 2012-08-01
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method solves the problem that indium and gallium elements are easily lost in the selenization method after sputtering, but the target preparation process is very easy to introduce impurity pollution, which affects the purity of raw materials. Prepare multiple targets with different ratios and sputter sequentially, which increases the complexity of the process and requires high equipment requirements

Method used

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  • Method for producing copper indium gallium diselenide (CIGS) solar battery absorption layer through evaporation method
  • Method for producing copper indium gallium diselenide (CIGS) solar battery absorption layer through evaporation method
  • Method for producing copper indium gallium diselenide (CIGS) solar battery absorption layer through evaporation method

Examples

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Effect test

Embodiment 1

[0033] A method for preparing an absorption layer of a copper indium gallium selenide solar cell by an evaporation method, comprising the steps of:

[0034] (1) Cuprous selenide powder, indium selenide powder and gallium selenide powder with a particle size not greater than 75 μm are Cu 2 Se 28.7%, Ga 2 Se 3 20.3%, In 2 Se 3 The ratio of 51.0% is mixed evenly, and placed at the evaporation source in the vacuum coating machine;

[0035] (2) When the vacuum degree is greater than 3×10 -3 Under the condition of Pa, heat the substrate, the substrate is molybdenum-coated soda-lime glass, and make the temperature of the substrate reach 200°C, then, the evaporation source is heated up to 1200°C at a heating rate of 400°C / min, and then, 1200°C is used for mixing The powder was heated for 2 minutes, and the mixed powder was evaporated by heating and deposited on the substrate to prepare a copper indium gallium selenide thin film with a thickness of 2 μm.

[0036] Through X-ray di...

Embodiment 2

[0038] The method for preparing the absorption layer of a copper indium gallium selenide solar cell by evaporation method as described in Example 1, the difference is that:

[0039] The mass percentage of cuprous selenide powder, indium selenide powder and gallium selenide powder is Cu 2 Se 32.1%, Ga 2 Se 3 19.3%, In 2 Se 3 48.6%.

[0040] Through X-ray diffraction (XRD) analysis, the composition of the CuInGaSe thin film that makes is the CuInGaSe of the chalcopyrite structure that grows along (112) direction (such as figure 2 As shown), no impurity phase is generated, and the crystallization condition is good.

Embodiment 3

[0042] A method for preparing an absorption layer of a copper indium gallium selenide solar cell by an evaporation method, comprising the steps of:

[0043] (i) Respectively, the powder particle size is not more than 75μm 2 Se powder, In 2 Se 3 Powder and Ga 2 Se 3 Put the powder into the three evaporation sources of the three-source co-evaporation device;

[0044] (ii) In a vacuum greater than 3×10 -3 Under the condition of Pa, the substrate is heated, and the substrate is molybdenum-coated soda-lime glass, so that the temperature of the substrate reaches 150°C;

[0045] (iii) Simultaneous heating with In 2 Se 3 The evaporation source of the powder and the addition of Ga 2 Se 3 The evaporation source of the powder, at a heating rate of 400 ° C / min, so that the addition of In 2 Se 3 The temperature of the evaporation source of the powder is raised to 600°C, adding Ga 2 Se 3 The temperature of the evaporation source of the powder rises to 900 °C, In 2 Se 3 Powd...

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Abstract

The invention relates to a method for producing a CIGS solar battery absorption layer through an evaporation method, which includes the steps of evaporating cuprous selenide (Cu2Se) powder, indium selenide (In2Se3) powder and gallium selenide (Ga2Se3) powder by using a vacuum evaporation coating method and forming a CIGS film on a substrate. According to the method for producing the CIGS film, only one device is required, the film is formed once, the method is simple and easy to operate, the control of composition of the CIGS film is convenient to control through changing the proportion of the powder or changing the evaporation rate, and the production cost and the production cycle of the CIGS film solar battery can be effectively reduced.

Description

technical field [0001] The invention relates to a method for preparing an absorption layer of a copper indium gallium selenium solar cell by an evaporation method, and belongs to the technical field of thin film solar cell material preparation. Background technique [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 , referred to as CIGS) thin-film solar cells have the characteristics of low cost, high efficiency, long life, good low-light performance, and radiation resistance, and are considered to be very promising thin-film solar cells. The absorption layer material of CIGS solar cells, copper indium gallium selenide, is a direct bandgap semiconductor, characterized by high light absorption coefficient and its bandgap can be adjusted between 1.04eV and 1.65eV with the change of Ga content, which is very suitable as a solar energy The light absorbing layer of the battery. [0003] The preparation of CIGS absorber layer is the core process of CIGS thin film solar cells...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C14/34C23C14/18
CPCY02P70/50
Inventor 王汉斌王卿璞
Owner SHANDONG UNIV
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