Method for synthesizing indium gallium selenide nanocrystal and film thereof from polyalcohol solution

A nanocrystal and indium selenide technology, applied in the field of indium gallium selenide nanomaterials, can solve the problems of uneven deposition in a large area, difficult control of stoichiometry, restricting application development, etc., and achieves low cost, improved crystallinity, and easy operation. Effect

Inactive Publication Date: 2015-09-09
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the gas-phase method has disadvantages such as high cost, complex process, vacuum environment, large-area uneven deposition, and difficult control of stoichiometry, which restrict its application and development.
However, the lower-cost liquid-phase preparation method is currently less reported.

Method used

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  • Method for synthesizing indium gallium selenide nanocrystal and film thereof from polyalcohol solution
  • Method for synthesizing indium gallium selenide nanocrystal and film thereof from polyalcohol solution
  • Method for synthesizing indium gallium selenide nanocrystal and film thereof from polyalcohol solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Examples 1-6 are a series of samples with different addition amounts of ethylenediamine. It can be seen from Table 2 that the main morphology of the product of Example 1 is flake, and the stoichiometric ratio is obviously rich in selenium. The products of Examples 2-6 are granular, and as the addition of ethylenediamine increases, the measured Ga / In molar ratio in the product increases, and the 2θ offset value also increases accordingly. At the same time, as the measured Ga / In molar ratio of the products of Examples 2-5 increases, the measured optical bandgap becomes wider. However, the optical bandgap measured in Example 6 decreases, and one of the reasons may be related to the defect energy level. In terms of the composition of the solution and the In:Ga:Se atomic ratio correspondence of the film sample, the film stoichiometry of Example 5 is closest to the feed ratio of In:Ga:Se=0.70:0.30:1.50 in the reaction solution, thus, Embodiment 5 is the optimum addition amo...

Embodiment 5

[0038] Examples 5 and 7 to 10 are a series of samples with different injection temperature / reflux temperature. It can be concluded from the results in Table 2 that in Example 7, that is, when the injection temperature / reflow temperature is 260 / 240° C., the morphology of the synthesized product is partially flake-like. The stoichiometric ratio of Example 5 is closest to the feed ratio of In:Ga:Se=0.70:0.30:1.50 in the reaction solution. It can be concluded that Example 5 is the optimum injection temperature / reflow temperature, namely 230 / 210°C.

[0039] Examples 5 and 11 to 13 are a series of samples with different addition amounts of dodecanethiol. In Example 11, that is, when the amount of dodecanethiol added is 25 μl, the enrichment of selenium in the stoichiometry is more obvious. In Examples 12, 5, and 13, the molar ratio of Ga / (In+Ga) increases with the increase of dodecanethiol addition. The stoichiometric ratios of Examples 5 and 13 are close to the feed ratio of In:...

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Abstract

The invention discloses a method for synthesizing indium gallium selenide nanocrystal and a film thereof from a polyalcohol solution. The method comprises the following steps: putting 40ml of triethylene glycol into a three-neck flask, adding 0.45mmol Se powder, and magnetically stirring; adding nitrogen and 25-100mu L of dodecyl mercaptan and 0.1-1.2ml of ethylenediamine solution to obtain an anion precursor solution; putting 10ml of triethylene glycol into the flask, adding indium chloride tetrahydrate and 0.1mmol/mL gallium chloride solution, and performing ultrasonic dissolution to obtain a cation precursor solution; slowly heating the anion solution in the three-neck flask to 220-260 DEG C; quickly injecting the cation precursor solution; keeping the temperature at 200-240 DEG C and performing reflux for 30min; cooling to room temperature to obtain a solution of (In(1-x)Gax)2Se3 nanocrystal; and performing purification and extraction to obtain a solid-state film of indium gallium selenide nanocrystal. According to the method disclosed by the invention, the reaction process is safe and reliable, the cost is low, the method is easy to operate, the product is stable, the stoichiometric ratio of In, Ga and Se is adjustable, and the repeatability is relatively good.

Description

technical field [0001] The invention relates to indium gallium selenide nanometer materials, in particular to a method for synthesizing indium gallium selenide nanometer crystals and films from ethylenediamine and dodecanethiol auxiliary polyol solution. Background technique [0002] Indium gallium selenide [(In,Ga) 2 Se 3 , IGSe] belongs to A 2 III B 3 VI type compound, is in indium selenide (In 2 Se 3 ) on the basis of gallium atoms partially replacing indium atoms to form a solid solution. (In,Ga) 2 Se 3 Can show a variety of phase transitions and different crystal structures, among which α, β, γ phases are common structures. By adjusting the ratio of indium and gallium, different values ​​of x can be obtained (In 1-x Ga x ) 2 Se 3 , so as to change the bandgap width to adapt to the working requirements of spectral matching. [0003] (In,Ga) 2 Se 3 It is a high-efficiency photovoltaic semiconductor chalcopyrite copper indium gallium selenide (CuIn 1-x Ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
Inventor 靳正国胡雅晰王健赖俊云纪焕丽
Owner TIANJIN UNIV
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