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Optical frequency converter of silicon nitride micro-ring integrated gallium selenide film

A gallium selenide and silicon nitride technology, applied in the field of nonlinear optics, can solve the problems of complex preparation process and low conversion efficiency

Inactive Publication Date: 2021-07-06
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] In order to overcome the shortcomings of the existing silicon nitride photonic structure based on the second-order nonlinear effect to realize the optical frequency conversion technology, the preparation process is complex and the conversion efficiency is low, the present invention proposes an optical frequency converter with a silicon nitride microring integrated gallium selenide thin film , the frequency converter has a simple preparation process and a compact structure, which can realize efficient conversion of doubled frequency light and sum frequency light

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Embodiment Construction

[0025] Now in conjunction with embodiment, accompanying drawing, the present invention will be further described:

[0026] The implementation case of the present invention proposes a silicon nitride microring integrated gallium selenide film optical frequency converter, such as figure 1 As shown, the optical frequency converter is characterized by comprising an upper straight waveguide 1 , a micro-ring cavity 2 , a lower straight waveguide 3 and a gallium selenide thin film 4 ; the gallium selenide thin film 4 directly covers the upper surface of the micro-ring cavity 2 .

[0027] The upper straight waveguide 1, the micro-ring cavity 2, and the lower straight waveguide 3 are made of silicon nitride material with a thickness of 300 nm, and the substrate material is silicon dioxide grown on a 500 μm thick silicon substrate with a thickness of 2 μm; The width of the straight waveguide 1 and the micro-ring cavity 2 is 1100nm, the width of the lower straight waveguide is 520nm; the...

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Abstract

The invention relates to an optical frequency converter of a silicon nitride micro-ring integrated gallium selenide film, which comprises a double-straight- waveguide type silicon nitride micro-ring cavity and a gallium selenide film, and is characterized in that the gallium selenide film covers the upper surface of the double-straight-waveguide type silicon nitride micro-ring cavity. Pump light enters the silicon nitride micro-ring cavity from an upper straight waveguide through side edge coupling. The silicon nitride micro-ring cavity has an amplification effect on a pump light field, so that a very strong evanescent light field is formed on the surface of the micro-ring. The evanescent light field interacts with the gallium selenide film with an ultrahigh second-order nonlinear coefficient to efficiently generate frequency doubling light or sum frequency light. The generated frequency doubling light or sum frequency light is coupled to a lower straight waveguide through the silicon nitride micro-ring cavity and output. The optical frequency converter which is simple in preparation process, low in cost, compact in structure and high in conversion efficiency is formed, and is expected to be applied to the fields of optical communication, photonic integrated chips and the like.

Description

technical field [0001] The invention relates to an optical frequency converter and belongs to the technical field of nonlinear optics. In particular, it relates to an optical frequency converter integrated with a silicon nitride microring and gallium selenide thin film. Background technique [0002] Frequency doubling and summing are the most basic, typical and widely used technologies in frequency conversion technology in modern laser technology. At present, the second-order nonlinear effect represented by frequency doubling and sum frequency is an important means to obtain strong coherent light at new frequencies. Repeatedly using the second-order nonlinear effect for frequency up-conversion can continuously expand the laser wavelength to the ultraviolet region. With the gradual maturity of silicon nitride film growth and device fabrication technology, research has found that silicon nitride waveguides have the advantages of low transmission loss, wide transparent band, l...

Claims

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Application Information

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IPC IPC(8): G02F1/377
CPCG02F1/377
Inventor 甘雪涛纪亚飞顾林棚黎志文李家杰吴静澜
Owner NORTHWESTERN POLYTECHNICAL UNIV
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