Cu-In-Ga-Se or Cu-In-Al-Se solar cell absorption layer target material and preparation method thereof

Abstract

The invention discloses a Cu-In-Ga-Se or Cu-In-Al-Se solar battery absorbing layer target pertaining to the field of photoelectric functional materials, and a preparation method thereof. High-purity cuprous selenide powder, indium selenide powder, gallium selenide powder or aluminum selenide powder are fully mixed evenly according to the stoichiometric ratio of a CuIn[1-x]GaxSe2 or CuIn[1-x]AlxSe2 solar battery absorbing layer, and then sintered and molded by hot-pressing under protective atmosphere or made into a biscuit after cold press molding or cold isostatic pressing, and the biscuit is sintered under protective atmosphere and certain pressure or does not go through pressure sintering. The technique of the invention is simple and convenient, has high efficiency and low cost, and the produced sputtering target is provided with uniform composition and homogeneous CuIn[1-x]GaxSe2 or CuIn[1-x]AlxSe2 phase, with the relative density more than 90 percent and stable performance. The invention is mainly applied to the preparation of a Cu-In-Ga-Se and Cu-In-Al-Se solar thin film battery absorbing layer.

Description

technical field

[0001] The invention belongs to the field of photoelectric functional materials, in particular to a copper indium gallium selenium or copper indium aluminum selenium solar cell absorption layer target material and a preparation method thereof Background technique

[0002] Copper indium selenide (CIS) thin-film solar cells have the characteristics of high photoelectric conversion rate, low cost, no performance attenuation, long life, and flexible substrates. It is one of the most promising photovoltaic cell technologies and is very promising in the future. obtain large-scale application. Copper indium selenide (CuInSe) with a chalcopyrite structure 2 ) with a bandgap width of 1.04eV, which is not a semiconductor material for optimum efficiency. Ga, Al, and In belong to Group III elements. Doping an appropriate amount of Ga in CIS, partially replacing In, forms CuIn 1-x Ga x Se 2 (CIGS) The bandgap width is continuously adjustable in the range of 1.04-1.67e...

Examples

Embodiment 1

[0025] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 2 hours at a mass ratio of 1:2.04:0.18 (x=0.1), so that the average particle size of the powder is below 30 μm. Put the mixed powder in a cold press mold, pressurize to 400-1000MPa and hold the pressure for 2-4 minutes to form a green body; or put the mixed powder in a cold isostatic press mold, pressurize to 100 ~280MPa and hold the pressure for 2~6 minutes to form a green body. Place the finished green body in a sintering furnace, evacuate to below 10Pa, maintain the vacuum condition or fill in 1 standard atmospheric pressure of hydrogen or nitrogen or argon inert gas, and raise the temperature to 650~650~ at a constant speed of 5~30℃ / min. 900°C, keep it warm for 0.5-12 hours, and then take it out after cooling to room temperature with the furnace, that is, the atomic percentages of Cu, In, Ga, and Se are about 25%, 22.5%, 2.5%, and 50%, respectively, and the comp...

Embodiment 2

[0027] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 6 hours at a mass ratio of 1:1.82:0.37 (x=0.2), so that the average particle size of the powder is below 30 μm. According to the method of Example 1, the atomic percentage contents of Cu, In, Ga, and Se are about 25%, 22.5%, 2.5%, and 50%, respectively, with uniform composition and uniform CuIn 1-x Ga x Se 2 phase, a CIGS target with a relative density greater than 90%.

Embodiment 3

[0029] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 10 hours at a mass ratio of 1:1.59:0.55 (x=0.3), so that the average particle size of the powder is below 30 μm. Fill the mixed powder evenly in the hot-pressing mold, vacuum the sintering furnace to below 10Pa, keep the vacuum condition or fill it with hydrogen or nitrogen or argon inert gas of 1 standard atmospheric pressure, at a constant speed of 5-30°C / min Rise to 500-900°C, apply 15-40MPa pressure after reaching the temperature, and then keep it warm for 0.5-12 hours, then cool to room temperature with the furnace, take it out after pressure relief, and then get Cu, In, Ga, Se atomic percentages of about 25%, 17.5%, 7.5%, 50%, uniform composition, with uniform CuIn 1-x Ga x Se 2 phase, a CIGS target with a relative density greater than 95%.

technical field

[0001] The invention belongs to the field of photoelectric functional materials, in particular to a copper indium gallium selenium or copper indium aluminum selenium solar cell absorption layer target material and a preparation method thereof Background technique

[0002] Copper indium selenide (CIS) thin-film solar cells have the characteristics of high photoelectric conversion rate, low cost, no performance attenuation, long life, and flexible substrates. It is one of the most promising photovoltaic cell technologies and is very promising in the future. obtain large-scale application. Copper indium selenide (CuInSe) with a chalcopyrite structure 2 ) with a bandgap width of 1.04eV, which is not a semiconductor material for optimum efficiency. Ga, Al, and In belong to Group III elements. Doping an appropriate amount of Ga in CIS, partially replacing In, forms CuIn 1-x Ga x Se 2 (CIGS) The bandgap width is continuously adjustable in the range of 1.04-1.67e...

Examples

Embodiment 1

[0025] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 2 hours at a mass ratio of 1:2.04:0.18 (x=0.1), so that the average particle size of the powder is below 30 μm. Put the mixed powder in a cold press mold, pressurize to 400-1000MPa and hold the pressure for 2-4 minutes to form a green body; or put the mixed powder in a cold isostatic press mold, pressurize to 100 ~280MPa and hold the pressure for 2~6 minutes to form a green body. Place the finished green body in a sintering furnace, evacuate to below 10Pa, maintain the vacuum condition or fill in 1 standard atmospheric pressure of hydrogen or nitrogen or argon inert gas, and raise the temperature to 650~650~ at a constant speed of 5~30℃ / min. 900°C, keep it warm for 0.5-12 hours, and then take it out after cooling to room temperature with the furnace, that is, the atomic percentages of Cu, In, Ga, and Se are about 25%, 22.5%, 2.5%, and 50%, respectively, and the comp...

Embodiment 2

[0027] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 6 hours at a mass ratio of 1:1.82:0.37 (x=0.2), so that the average particle size of the powder is below 30 μm. According to the method of Example 1, the atomic percentage contents of Cu, In, Ga, and Se are about 25%, 22.5%, 2.5%, and 50%, respectively, with uniform composition and uniform CuIn 1-x Ga x Se 2 phase, a CIGS target with a relative density greater than 90%.

Embodiment 3

[0029] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 10 hours at a mass ratio of 1:1.59:0.55 (x=0.3), so that the average particle size of the powder is below 30 μm. Fill the mixed powder evenly in the hot-pressing mold, vacuum the sintering furnace to below 10Pa, keep the vacuum condition or fill it with hydrogen or nitrogen or argon inert gas of 1 standard atmospheric pressure, at a constant speed of 5-30°C / min Rise to 500-900°C, apply 15-40MPa pressure after reaching the temperature, and then keep it warm for 0.5-12 hours, then cool to room temperature with the furnace, take it out after pressure relief, and then get Cu, In, Ga, Se atomic percentages of about 25%, 17.5%, 7.5%, 50%, uniform composition, with uniform CuIn 1-x Ga x Se 2 phase, a CIGS target with a relative density greater than 95%.