Cu-In-Ga-Se or Cu-In-Al-Se solar cell absorption layer target material and preparation method thereof
A solar cell, copper indium aluminum selenium technology, applied in coating, metal material coating process, ion implantation plating and other directions, can solve the problem of affecting process implementation and industrial production, loss of In and Ga elements, affecting film performance, etc problems, to achieve the effect of easily forming a large area uniform film, avoiding the loss of elements, and avoiding adverse effects
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Embodiment 1
[0025] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 2 hours at a mass ratio of 1:2.04:0.18 (x=0.1), so that the average particle size of the powder is below 30 μm. Put the mixed powder in a cold press mold, pressurize to 400-1000MPa and hold the pressure for 2-4 minutes to form a green body; or put the mixed powder in a cold isostatic press mold, pressurize to 100 ~280MPa and hold the pressure for 2~6 minutes to form a green body. Place the finished green body in a sintering furnace, evacuate to below 10Pa, maintain the vacuum condition or fill in 1 standard atmospheric pressure of hydrogen or nitrogen or argon inert gas, and raise the temperature to 650~650~ at a constant speed of 5~30℃ / min. 900°C, keep it warm for 0.5-12 hours, and then take it out after cooling to room temperature with the furnace, that is, the atomic percentages of Cu, In, Ga, and Se are about 25%, 22.5%, 2.5%, and 50%, respectively, and the comp...
Embodiment 2
[0027] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 6 hours at a mass ratio of 1:1.82:0.37 (x=0.2), so that the average particle size of the powder is below 30 μm. According to the method of Example 1, the atomic percentage contents of Cu, In, Ga, and Se are about 25%, 22.5%, 2.5%, and 50%, respectively, with uniform composition and uniform CuIn 1-x Ga x Se 2 phase, a CIGS target with a relative density greater than 90%.
Embodiment 3
[0029] Will Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 The powders (both purity ≥ 99.99%) are mixed and ball-milled for 10 hours at a mass ratio of 1:1.59:0.55 (x=0.3), so that the average particle size of the powder is below 30 μm. Fill the mixed powder evenly in the hot-pressing mold, vacuum the sintering furnace to below 10Pa, keep the vacuum condition or fill it with hydrogen or nitrogen or argon inert gas of 1 standard atmospheric pressure, at a constant speed of 5-30°C / min Rise to 500-900°C, apply 15-40MPa pressure after reaching the temperature, and then keep it warm for 0.5-12 hours, then cool to room temperature with the furnace, take it out after pressure relief, and then get Cu, In, Ga, Se atomic percentages of about 25%, 17.5%, 7.5%, 50%, uniform composition, with uniform CuIn 1-x Ga x Se 2 phase, a CIGS target with a relative density greater than 95%.
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