Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for preparing CIGS (copper indium gallium selenide) film with non-vacuum method

A non-vacuum, thin-film technology, applied in final product manufacturing, sustainable manufacturing/processing, coating, etc., can solve the problems of high investment cost and battery cost, difficult to control selenization process, low target utilization rate, etc. The effect of high utilization rate of raw materials, low production cost and low investment

Active Publication Date: 2013-10-23
BEIJING SIFANG JIBAO AUTOMATION
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sputtering metal pre-film + selenization two-step method has low target utilization, long film formation time, difficult control of selenization process, high investment cost and battery cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing CIGS (copper indium gallium selenide) film with non-vacuum method
  • Method for preparing CIGS (copper indium gallium selenide) film with non-vacuum method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Mixing powder: cuprous selenide (Cu 2 Se), indium selenide (In 2 Se 3 ), gallium selenide (Ga 2 Se 3 ) three powders by CuIn 0.7 Ga 0.3 Se 2 Stoichiometric configuration as mixed powder

[0037] (2) Ball milling: the mixed powder is mixed with ZrO in a high-energy ball mill 2 Mill the balls in absolute ethanol until the average particle size of the powder is 0.6 μm, and use a laser particle size analyzer to measure the average particle size of the powder;

[0038] (3) Prepare the slurry: mix the ball-milled powder with ethanol to make a slurry;

[0039] (4) Coating: scrape the slurry on the surface of the glass substrate;

[0040] (5) Baking: Baking the substrate coated with the slurry at 100°C for 1 hour to remove the solvent to form a CIGS precursor film with a thickness of 1.5 μm;

[0041] (6) Annealing: place the precursor film in H 2 Annealing treatment is carried out in Se+Ar mixed gas to form CIGS thin film. The annealing temperature is 550°C, the...

Embodiment 2

[0044] (1) Mixing powder: the purity of cuprous selenide (Cu 2 Se), indium selenide (In 2 Se 3 ), gallium selenide (Ga 2 Se 3) three powders by Cu 0.9 In 0.75 Ga 0.25 Se 1.95 The stoichiometric ratio is configured as a mixed powder;

[0045] (2) Ball milling: the mixed powder is ball-milled in absolute ethanol with agate balls in a high-energy ball mill until the average particle size of the powder is 1 μm, and the average particle size of the powder is measured by a laser particle size analyzer;

[0046] (3) Prepare slurry: mix the powder after ball milling with methanol to make slurry;

[0047] (4) Coating: Spin-coat the slurry on the surface of the stainless steel substrate;

[0048] (5) Baking: Baking the substrate coated with the slurry at 120°C for 0.5h to remove the solvent and form a CIGS precursor film with a thickness of 2 μm;

[0049] (6) Annealing: place the precursor film in solid selenium vapor and N 2 The annealing treatment is performed in a mixed ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a CIGS (copper indium gallium selenide) film with a non-vacuum method, which comprises the following steps of: (1) preparing powder: weighing and mixing three types of powder: high-purity cuprous selenide (Cu2Se), indium selenide (In2Se3) and gallium selenide (Ga2Se3); preparing mixed powder of the required stoichiometric ratio with the three types of powder; (2) ball milling: carrying out ball milling on the mixed powder for a long time in a high-energy ball mill to ensure that the average grain diameter of the powder is less than or equal to 2mu m; (3) preparing slurry: mixing the ball-milled powder and alcohol to obtain slurry; (4) coating: coating the surface of a substrate with the slurry; (5) baking: baking the coated substrate to remove solvent to form a CIGS precursor film; and (6) annealing: carrying out annealing processing under the protection of the selenium-containing atmosphere to obtain the CIGS film. The method for preparing the CIGS film with the non-vacuum method has the advantages of less investment, simple technology, high raw material use ratio and low production cost and is suitable for large-area film formation, and no expensive vacuum equipment is adopted.

Description

technical field [0001] The invention relates to a method for preparing a CIGS film by a non-vacuum method, belonging to the technical field of thin film solar cells. Background technique [0002] Copper indium gallium selenide (CIGS) thin-film solar cell is the thin-film solar cell with the highest conversion efficiency. It has the characteristics of high efficiency, no performance degradation, long life, and flexible substrate. It is currently one of the most popular solar cell production technologies in the world. At present, some companies such as the United States, Japan, and Germany have begun large-scale production and practical application of CIGS batteries. The CIGS absorber layer is a key factor determining the photoelectric performance of CIGS thin film solar cells. The methods for preparing CIGS absorbing layer mainly include vacuum method and non-vacuum method. The vacuum method is mainly divided into a co-evaporation method and a two-step method. The co-evapo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18C23C24/00
CPCY02P70/50
Inventor 张宁张涛余新平张至树徐刚
Owner BEIJING SIFANG JIBAO AUTOMATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com