Method for preparing CIGS (copper indium gallium selenide) film with non-vacuum method
A non-vacuum, thin-film technology, applied in final product manufacturing, sustainable manufacturing/processing, coating, etc., can solve the problems of high investment cost and battery cost, difficult to control selenization process, low target utilization rate, etc. The effect of high utilization rate of raw materials, low production cost and low investment
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Embodiment 1
[0036] (1) Mixing powder: cuprous selenide (Cu 2 Se), indium selenide (In 2 Se 3 ), gallium selenide (Ga 2 Se 3 ) three powders by CuIn 0.7 Ga 0.3 Se 2 Stoichiometric configuration as mixed powder
[0037] (2) Ball milling: the mixed powder is mixed with ZrO in a high-energy ball mill 2 Mill the balls in absolute ethanol until the average particle size of the powder is 0.6 μm, and use a laser particle size analyzer to measure the average particle size of the powder;
[0038] (3) Prepare the slurry: mix the ball-milled powder with ethanol to make a slurry;
[0039] (4) Coating: scrape the slurry on the surface of the glass substrate;
[0040] (5) Baking: Baking the substrate coated with the slurry at 100°C for 1 hour to remove the solvent to form a CIGS precursor film with a thickness of 1.5 μm;
[0041] (6) Annealing: place the precursor film in H 2 Annealing treatment is carried out in Se+Ar mixed gas to form CIGS thin film. The annealing temperature is 550°C, the...
Embodiment 2
[0044] (1) Mixing powder: the purity of cuprous selenide (Cu 2 Se), indium selenide (In 2 Se 3 ), gallium selenide (Ga 2 Se 3) three powders by Cu 0.9 In 0.75 Ga 0.25 Se 1.95 The stoichiometric ratio is configured as a mixed powder;
[0045] (2) Ball milling: the mixed powder is ball-milled in absolute ethanol with agate balls in a high-energy ball mill until the average particle size of the powder is 1 μm, and the average particle size of the powder is measured by a laser particle size analyzer;
[0046] (3) Prepare slurry: mix the powder after ball milling with methanol to make slurry;
[0047] (4) Coating: Spin-coat the slurry on the surface of the stainless steel substrate;
[0048] (5) Baking: Baking the substrate coated with the slurry at 120°C for 0.5h to remove the solvent and form a CIGS precursor film with a thickness of 2 μm;
[0049] (6) Annealing: place the precursor film in solid selenium vapor and N 2 The annealing treatment is performed in a mixed ga...
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