Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof

A solar cell, copper indium gallium selenide technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of underutilization, affecting the photoelectric conversion efficiency of CIGS solar cells, and the light absorption efficiency cannot be further improved. , to improve the overall absorbance and photoelectric conversion efficiency, high photoelectric conversion efficiency, and enhance the effect of absorbance

Inactive Publication Date: 2011-05-25
JENN FENG NEW ENERY CO LTD
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  • Application Information

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Problems solved by technology

[0009] However, the disadvantage of the existing technology is that, limited by the intrinsic light absorption characteristics of CuGaSe2 and CuInSe2, about 50% of the light energy in the wavelength ran

Method used

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  • Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof
  • Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof
  • Light absorption layer of copper indium gallium selenide (CIGS) solar cell and manufacturing method thereof

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Embodiment Construction

[0028] The following describes the embodiments of the present invention in more detail with the accompanying drawings of the specification, so that those skilled in the art can implement them after studying the specification.

[0029] Refer to Figure 4 , Is a schematic structural diagram of the first embodiment of the present invention. Such as Figure 4 As shown, the CIGS solar cell 3 of the present invention deposits the back electrode layer 20 and the molybdenum-copper-aluminum-silver alloy layer 22 on the glass substrate 10, and then combines the cuprous sulfide layer 24, the first mixed layer 41, and the second mixed layer. The layer 42 and the third mixed layer 43 are sequentially stacked on the molybdenum copper aluminum silver alloy layer 22, and the cuprous sulfide layer 24, the first mixed layer 41, the second mixed layer 42, and the third mixed layer 43 are heat treated to form a high A copper indium gallium sulfide selenide light absorbing layer with light absorption...

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Abstract

The invention discloses a light absorption layer of a copper indium gallium selenide (CIGS) solar cell and a manufacturing method thereof. The method comprises the following steps of: forming a cuprous sulfide layer by utilizing a sputtering method; forming a plurality of CIGS stacking layers by utilizing a CIGS sol-gel solution in a soaking, rotating, printing or spraying mode by matching with pre-drying; then fusing the cuprous sulfide layer and the CIGS stacking layers to form a CIGS light absorption layer by utilizing quick heating heat treatment so as to form the CIGS solar cell having high photoelectric conversion efficiency and high light absorbancy.

Description

Technical field [0001] The invention relates to a copper indium gallium selenium solar cell and a manufacturing method thereof, in particular to the structure of a light absorption layer of a copper indium gallium selenium solar cell and a manufacturing method thereof. Background technique [0002] With the gradual depletion of petrochemical energy, the search for stable and reliable alternative energy has become the biggest survival issue facing all mankind in this century, and various energy sources including bioenergy, geothermal energy, wind energy, and nuclear energy are in source reliability, Considering the safety of use and environmental protection, it is inferior to solar energy derived from solar radiation, because sunlight can be received on the surface of the earth, and the light energy is only converted into electrical energy during use, without any pollution Natural materials are produced, so solar energy is currently the cleanest alternative energy source. [0003] ...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0216H01L31/042H01L31/18
CPCY02E10/50Y02P70/50
Inventor 庄泉龙
Owner JENN FENG NEW ENERY CO LTD
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