Recovery method of copper indium gallium selenide thin-film solar panel

A thin-film solar energy, copper indium gallium selenide technology, applied in element selenium/tellurium, photographic technology, instruments, etc., can solve the problems of long process, limited applicability, difficult control of two-electrode electrolysis process, etc., and achieves simplified process and easy operation. Effect

Active Publication Date: 2013-07-03
FIRST SEMICON MATERIALS
View PDF2 Cites 41 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The process of this method is long, the two-electrode electrolysis process is difficult to control, and the final product is a metal compound, which not only needs further pro

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The first step is to crush the CIGS thin-film solar panel until the particle size of the fragments is 1-5mm, and obtain CIGS thin-film solar panel fragments.

[0029] In the second step, measure 800 ml of sulfuric acid solution with a molar concentration of 2 mol / L, and add 120 g of hydrogen peroxide into the above sulfuric acid solution. Slowly warm the mixed solution of sulfuric acid and hydrogen peroxide to 50° C., add 600 g of CIGS thin-film solar panel fragments into the heated mixed solution, and soak for 5 hours to complete the leaching reaction.

[0030] The third step is to filter and wash the mixed solution soaked with CIGS thin film solar panel fragments. After filtering and washing, the obtained glass slag (leaching slag) is clean and transparent glass fragments, which can be directly recycled. In addition to the glass slag, 910ml of leaching solution was also obtained. The concentrations of Cu, In, Ga, and Se in the leaching solution were determined to be...

Embodiment 2

[0037] The first step is to crush the CIGS thin film solar panel until the particle size of the fragments is 1-5mm, and obtain CIGS thin film solar fragments.

[0038] In the second step, measure 800 ml of sulfuric acid solution with a molar concentration of 3 mol / L, and add 80 g of hydrogen peroxide into the above sulfuric acid solution. Slowly heat up the mixed solution of sulfuric acid and hydrogen peroxide to 60° C., and add 1000 g of CIGS thin-film solar panel fragments into the heated mixed solution. Soak for 4 hours to make the leaching reaction more complete.

[0039] The third step is to filter and wash the mixed solution soaked with CIGS thin film solar panel fragments. After filtering and washing, the obtained glass slag (leaching slag) is clean and transparent glass fragments, which can be directly recycled. In addition to the glass slag, 895ml of leaching solution was also obtained. The concentrations of Cu, In, Ga, and Se in the leaching solution were determin...

Embodiment 3

[0046] The first step is to crush the CIGS thin film solar panel until the particle size of the fragments is 1-5mm, and obtain CIGS thin film solar fragments.

[0047] In the second step, measure 800 ml of sulfuric acid solution with a molar concentration of 4 mol / L, and add 40 g of hydrogen peroxide into the above sulfuric acid solution. Slowly heat up the mixed solution of sulfuric acid and hydrogen peroxide to 70° C., and add 1200 g of CIGS thin-film solar panel fragments into the heated mixed solution. Soak for 3 hours to make the leaching reaction more complete.

[0048] The third step is to filter and wash the mixed solution soaked with CIGS thin film solar panel fragments. After filtering and washing, the obtained glass slag (leaching slag) is clean and transparent glass fragments, which can be directly recycled. In addition to the glass slag, 840ml of leaching solution was also obtained. After measurement, the concentrations of Cu, In, Ga, and Se in the leaching sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Granularityaaaaaaaaaa
Login to view more

Abstract

The invention provides a recovery method of a copper indium gallium selenide thin-film solar panel. The method comprises the steps that: the copper indium gallium selenide thin-film solar panel is crushed into pieces; the pieces are soaked by using a H2SO4+H2O2 system, such that a soaking liquid is obtained; the soaking liquid is filtered, such that a first leachate is obtained; with a first phase ratio of 1, the first leachate is extracted by using an extraction agent; separation is carried out, such that a first extraction liquid and a first raffinate are obtained; the extraction agent is composed of 30% of P2O4 and 70% of kerosene by volume percentage, the extraction and balance time is 5-20min; an HCl solution is adopted as a stripping agent, and the first extraction liquid is striped by using a second phase ratio, such that In and stripping residual liquid are obtained; a reducing agent is added into the first raffinate; when a reduction reaction is finished, crude Se and a second leachate are obtained by filtering; alkali is added into the second leachate, and a pH value is regulated such that the pH value is constantly higher than 14; when a reaction is finished, filtering is carried out, such that a filtering slag comprising a hydroxide of Cu and a water solution comprising Ga are obtained; the alkali is NaOH, the pH value adjustment process is to add the NaOH in the reaction process after pH=14 so that the pH is always kept more than 14 during the reaction process, and the reaction time is kept for 0.5-2h; and the water solution is electrolyzed.

Description

technical field [0001] The invention relates to a method for recycling thin-film solar panels, in particular to a method for recycling copper-indium-gallium-selenium thin-film solar panels. Background technique [0002] Solar photovoltaic materials contain many rare metals, such as indium, gallium, selenium and so on. As scarce resources, these rare metals need to be further recycled, which is conducive to the sustainable utilization of scarce resources and the sustainable development of solar photovoltaic materials. [0003] US Patent No. US5,779,877 issued on July 14, 1998 discloses a method for recycling copper indium selenium solar photovoltaic waste. The method mainly includes crushing, nitric acid leaching, two-electrode electrolytic separation of copper, selenium and indium, then evaporation and decomposition to obtain a mixture of oxides of indium and zinc, and oxidative distillation to separate copper and selenium. [0004] The process of this method is long, the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C22B7/00C22B3/08C22B3/38C22B3/44C25C1/22C22B15/00C22B58/00C01B19/02
CPCY02P10/20
Inventor 李琼芳朱刘
Owner FIRST SEMICON MATERIALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products