Method for preparing novel conductive indium oxide target and indium oxide film

A technology of conductive oxidation and indium oxide, which is applied in the field of solar photovoltaics, can solve the problems of low light transmittance of transparent conductive films, abnormal arcing of targets, etc.

Active Publication Date: 2013-07-17
赣州市创发光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the indium oxide series transparent conductive film still has the problem of low light transmittance in the long wavelength region, and the phenomenon of abnormal arcing on the target during the sputtering process is serious and urgently needs to be improved.

Method used

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  • Method for preparing novel conductive indium oxide target and indium oxide film

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Experimental program
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Effect test

Embodiment 1

[0015] A method for preparing a new type of conductive indium oxide target material. The weight of the following substances is expressed in parts by weight: add 100 parts of indium oxide to mixed metal oxides, add 68 parts of zirconia balls, 30 parts of pure water and 2 parts Grind and mix the above materials to obtain a slurry, then pour the slurry into a three-inch porous mold, dry for 20 hours, remove the film to form an embryo body, and then sinter at a high temperature of 1400 degrees for 5.5 hours to form a splash The target body for plating is cut and ground into a three-inch conductive indium oxide target.

[0016] The mixed metal oxide is 1 part of tin oxide and 0.1 part of titanium oxide, and the grinding time is 7 hours.

[0017] Wherein the dispersant is an aqueous solution of sodium polyacrylate with a mass fraction of 0.5%.

[0018]A method for preparing a new type of conductive indium oxide film. The above-mentioned conductive indium oxide target material is fi...

Embodiment 2

[0020] A method for preparing a new type of conductive indium oxide target material. The weight of the following substances is expressed in parts by weight: add 100 parts of indium oxide to mixed metal oxides, add 68 parts of zirconia balls, 30 parts of pure water and 2 parts Grinding and mixing the above materials to obtain a slurry, then pouring the slurry into a three-inch porous mold, drying for 24 hours, demoulding to form an embryo body, and then sintering at a high temperature of 1480 degrees for 6.0 hours to form a splash The target body for plating is cut and ground into a three-inch conductive indium oxide target.

[0021] The mixed metal oxide is 5 parts of tin oxide and 1.5 parts of titanium oxide, and the grinding time is 8 hours.

[0022] Wherein the dispersant is an aqueous solution of sodium polyacrylate with a mass fraction of 1.2%.

[0023] A method for preparing a new type of conductive indium oxide film. The above-mentioned conductive indium oxide target m...

Embodiment 3

[0025] A method for preparing a new type of conductive indium oxide target material. The weight of the following substances is expressed in parts by weight: add 100 parts of indium oxide to mixed metal oxides, add 68 parts of zirconia balls, 30 parts of pure water and 2 parts Grinding and mixing the above materials to obtain a slurry, then pouring the slurry into a three-inch porous mold, drying for 28 hours, demoulding to form an embryo body, and then sintering at a high temperature of 1550 degrees for 6.5 hours to form a splash The target body for plating is cut and ground into a three-inch conductive indium oxide target.

[0026] The mixed metal oxide is 10 parts of tin oxide and 3.0 parts of titanium oxide, and the grinding time is 9 hours.

[0027] Wherein the dispersant is an aqueous solution of sodium polyacrylate with a mass fraction of 2%.

[0028] A method for preparing a new type of conductive indium oxide film. The above-mentioned conductive indium oxide target ma...

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Abstract

The invention discloses a method for preparing a novel conductive indium oxide target and an indium oxide film. A third element is added to an original binary oxide to improve the electric carrier mobility so as to further improve the light transmittance and the electrical conductivity; and the related target is prepared by the combination of casting molding and high-temperature sintering for the first time. Therefore, the uniformity and compactness of the target are improved; an abnormal electric arc in a sputtering process is greatly reduced; the service life of the target is prolonged; the utilization rate of the target is improved; the quality and the performance of the sputtering film are improved; the efficiency of a copper indium gallium selenide (CIGS) solar cell is effectively improved; and the requirements of production are met.

Description

technical field [0001] The invention relates to a method for preparing a novel conductive indium oxide target material and an indium oxide thin film, belonging to the field of solar photovoltaics. Background technique [0002] With the development of society and the rapid advancement of science and technology, the demand for functional materials is becoming increasingly urgent. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as displays, touch screens, semiconductors, and solar energy, a new functional material—transparent conducting oxide (TCO film for short)—is produced and developed. The so-called transparent conductive film refers to a film material with a light transmittance of more than 80% in the range of visible light, high conductivity, and a specific resistance value lower than 1x10 -3 Ω.cm. It is known that metals such as Au, Ag, Pt, Cu, Rh, Pd, Al, Cr, etc., ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/34
Inventor 黄信二
Owner 赣州市创发光电科技有限公司
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