1239 results about "Ion doping" patented technology

Copper indium diselenide, copper indium gallium diselenide, and other IB-IIIA-VIA compounds are produced by the liquid deposition on a substrate of a precursor-containing ink, followed by heating to produce the desired material. The precursor containing ink is a mixture of three parts. The first part is plurality of particulates of metal compounds of IB, IIIA. The second part is chalcogen source of selenium, sulfur, or organic chalcogen compounds dissolved in a liquid organic solvent. The third part solution function as viscosity adjustment, as introduction of dopant of sodium ion and / or as ink stabilizer. The precursor ink can be coated on substrate at room temperature and it can be transferred into copper indium (gallium) chalcogenide semiconductor thin film upon baking and a chalcogenization process. The resulting thin film semiconducting material can be incorporated into photovoltaic and other electronic devices.

A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.

The present invention is directed to a process for making an amorphous nanostructured cation-doped manganese oxide material useful as an ion intercalation host for rechargeable batteries, including the steps of preparing a solution containing cation permanganate combined optionally with a cation donor compound, mixing the solution with a reducing agent to yield a hydrogel comprising a manganese oxide compound, cryogenically freezing the hydrogel, drying the frozen gel to yield a cryogel amorphous nanostructured cation-doped manganese oxide, and heat treating the dried cryogel.

There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source / drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after oxygen is added to the oxide semiconductor layer, heat treatment is performed on the oxide semiconductor layer to remove the impurities. In order to add oxygen, it is preferable to use a method in which oxygen having high energy is added by an ion implantation method, an ion doping method, or the like.

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source / drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

Scintillation materials of this invention have an alkali halide host material, a (first) scintillation dopant of various types, and a variety of second dopants (co-dopants). In another embodiment, the scintillation materials of this invention have an alkali halide host material, a (first) scintillation dopant of various types, a variety of second dopants (co-dopants), and a variety of third dopants (co-dopants). Co-dopants of this invention are capable of providing a second auxiliary luminescent cation dopant, capable of introducing an anion size and electronegativity mismatch, capable of introducing a mismatch of anion charge, or introducing a mismatch of cation charge in the host material.

A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.

The invention relates to a hydrothermal synthesis preparation method of ion doping high-performance lithium iron phosphate. Iron source, nickel source, organic acid and phosphorus source are dissolved in deionized water according to a certain proportion, added with a dispersing agent, and mixed to obtain a mixed solution; lithium source which is uniformly dissolved in deionized water is dropwise and slowly added into the mixed solution; a pH is adjusted to 7.5-8.2 after dropping; the obtained alkalescent mixed solution is transferred to an autoclave; the autoclave is enclosed and insulated at 80-220 DEG C for 1 h-3 h; after cooling the autoclave is opened, and products are taken out, filtered with deionized water for several times and washed; an obtained filter cake is dried; then the obtained nickelic lithium iron phosphate powder and carbon contained organic compound in a mass ratio of 10:1-4 are treated with ball-milling for 1-3 h in alcohol, dried and sintered for 1-4 h at 600-800 DEG C under protection of nitrogen to obtain the product.

The invention relates to a preparation method of a constant high temperature circulation NCM 523 (nickel cobalt manganese acid lithium) ternary material for a lithium ion battery. The chemical formula of the constant high temperature circulation NCM 523 ternary material is Li(1+x)Ni0.5Co0.2Mn0.3AlxO2, wherein x is 0.02-0.1. According to the method, aluminum salt and oxide thereof are added in material sintering, a dry process is adopted to uniformly mix, then sintering is performed, high-temperature performance of NCM 523 is increased by admixing Al ions, so that the problems of worse high-temperature cycle performance and high-temperature storage performance of nickel cobalt manganese acid lithium are effectively solved; as the dry-process is adopted to admix, prepared NCM 523 cathode material has the advantages of large specific capacity, good cycle performance, stable quality, low cost, simple preparation technology and little pollution, does not produce waste water, and is easy for industrialization.

The invention discloses an afterglow nanomaterial and a preparation method of a long-afterglow nanomaterial with sizes and spectrum adjusted on basis of ion doping. An expression formula of the nanomaterial is Zn(1+x)Ga(2-2x)GexO4:0.75%Cr, wherein x is larger than or equal to 0 and smaller than or equal to 0.5, and the particle size is 7 nm-80 nm. According to the preparation method, a zinc nitrate solution, a gallium nitrate solution, a sodium germinate solution and a chromium nitrate solution in specific proportions are mixed together, ammonia water is added rapidly while the mixture is stirred, and the pH of the mixed solution is adjusted to 10; then, the mixed solution is transferred to a high-temperature hydrothermal kettle and reacts at the temperature of 120 DEG C, and the afterglow nanomaterial is obtained. The method is simple and easy to implement, severe experiment conditions and complicated large instruments are not required, synthesized nanoparticles are uniform in sizes and have a good water-phase dispersion property and high afterglow strength, the afterglow time can reach 10 h, and accordingly, the synthesized nanoparticles are suitable for improving the physical and chemical properties of the long-afterglow nanomaterial.

There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.

The invention discloses a sodion battery cathode material, which is an ion-doped carbon material, wherein the carbon material is from pyrolytic carbon of various organic matter materials; the prepared carbon material has the ion doping property and can provide a suitable sodion de-intercalation channel; and the sodion battery cathode material has reversible sodion de-intercalation performance and is very hopeful to become a sodion battery cathode material which is low in cost and environment-friendly.

The invention provides a purification material of gas-state pollutants. The purification material takes an adsorption material as a carrier; titanium dioxide, manganese oxide and reduced-state noble metal are loaded on the carrier, wherein the loading amount of the titanium dioxide is 0 to 60 percent of the mass of the adsorption material; the loading amount of the manganese oxide is 0.1 to 10 percent of the mass of the adsorption material; the loading amount of the reduced-state noble metal is 0.01 to 1 percent of the mass of the adsorption material; the reduced-state noble metal is one or two or more than two of platinum, palladium, gold and silver; the titanium dioxide is modified by adopting an ion doping modification manner and a photocatalyst is loaded by the adsorption material with a high adsorption property, so that a composite catalyst with high efficiency, low cost and no secondary pollution is prepared; the composite catalyst can be used for purifying VOCs (Volatile Organic Chemicals) including formaldehyde, benzene, toluene and the like in indoor air and eliminating O3 gas-state pollutants under room temprature; the disadvantage of an existing air purification technology that the efficiency of removing the gas-state pollutants is low is overcome.

A lithium-ion capacitor excellent in durability, which has high energy density and high capacity retention ratio when the capacitor is charged and discharged at a high load, is disclosed. The lithium-ion capacitor includes a positive electrode, a negative electrode and an aprotic organic solvent of a lithium salt as an electrolyte solution. In the lithium-ion capacitor, a positive electrode active material allows lithium ions and / or anions to be doped thereinto and de-doped therefrom, and a negative electrode active material allows lithium ions to be doped thereinto and de-doped therefrom. At least one of the negative electrode and the positive electrode is pre-doped with lithium ions so that after the positive electrode and the negative electrode are shortcircuited, a potential of the positive electrode is 2 V (relative to Li / Li+) or lower. A thickness of a positive electrode layer of the positive electrode is within a range from 18 to 108 μm.

An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

The present invention relates to rare earth upconversion nanoparticles, a preparation method and uses thereof, wherein the rare earth upconversion nanoparticles sequentially comprise an activator shell layer, an energy transfer agent shell layer and a sensitizing agent shell layer from inside to outside, each layer contains Yb<3+>, and the doping concentration of Yb<3+> is gradually reduced from inside to outside. According to the present invention, the ytterbium ion doping concentration gradient is set to effectively transfer the excitation state energy of the sensitizing agent to the activator, such that the upconversion luminescence quantum yield of the rare earth upconversion nanoparticles is effectively improved and achieves 0.22%, and the 800 nm continuous laser excitation at the excitation light source intensity of 2W / cm<2> is achieved; and the rare earth upconversion nanoparticles can produce strong upconversion luminescence under the infrared LED light source excitation, and the potable detection equipment based on the rare earth upconversion nanoparticle luminescence probe can be designed by using the unique packaging and array technology of the infrared LED light source so as to further expand the application of the upconversion luminescence material in the biomedical field.

The invention relates to an optical fiber and a manufacturing method of optical fiber. The optical fiber comprises a core layer and a coating layer, the optical fiber is characterized in that the average refractive index n1 of the core layer, the refractive index n2 of the coating layer and the refractive index n0 of pure silicon dioxide meet the following formula: n1 is equal to (0.997-1.0012)*n0, and n2 is equal to n1-(0.0025-0.0045)*n0; the core layer is a core layer doped with alkali metal ions or a core layer doped with no alkali metal ions, and the coating layer is composed of a silicon dioxide base material doped with fluorine and chlorine and containing a hydroxyl radical; and the fluorine doping concentration difference delta [F] of the materials of the coating layer and the core layer, the hydroxyl radical concentration difference delta [OH] of the materials of the core layer and the coating layer, the fluorine doping concentration difference delta [Cl] of the materials of the core layer and the coating layer and the alkali metal ion doping concentration sum [M] of the material of the core layer meet the following formulation: delta [F]-delta [Cl]-300*[M]-150000* delta [OH] <=0.8 mol%. According to the invention, the doping ingredients and the concentration difference are controlled to match the high temperature viscosity of the materials of the core layer and the coating layer of the optical fiber so as to obtain a single mode optical fiber with reduced Rayleigh scattering attenuation, and the scattering coefficient of the optical fiber is reduced to be not larger than 0.85 so as to effectively reduce the transmission dissipation of the optical fiber.

The invention relates to a method for preparing a rare earth doped yttrium aluminum garnet nanometer powder body by a partial liquid phase precipitation method. Y(NO3)3 and Al2O3 are used to synthesize the yttrium aluminum garnet nanometer powder body; and Nd, Yb, Cr and other rare earth elements are used for ion doping. Ammonium oxalate, NH4HCO3 or urea is adopted as a precipitant. Sediment is aged, fully washed, dried and calcined for 15 to 120 minutes at a temperature of between 1000 and 1600 DEG C under the aerobic condition, thereby acquiring the rare earth doped YAG powder body with a grain diameter between 80 to 200 nm. The method can realize the uniform doping of the rare earth elements, also avoid forming a colloidal substance which is unfavorable for washing, and prepare the rare earth doped YAG nanometer powder body material in high efficiency.

The invention discloses a method for preparing an aluminium-doped zinc oxide transparent conductive film by solvent thermal process; soluble organic slat and inorganic slat of zinc are taken as precursors, and the aluminium-doped zinc oxide transparent conductive film is deposited on a substrate by the solvent thermal process. By controlling the concentration of reactant precursor liquid, the aluminium ion doping quantity, the thermal reaction temperature of solvent, the thermal reaction time of the solvent, the cooling way of a reaction kettle and the filling amount of the reaction kettle, the technique can deposit the aluminium-doped zinc oxide transparent conductive film on the substrate at the temperature of below 200 DEG C; furthermore, the visible light transmission of the film can reach 80%, and the square resistance is less than 760 omega.

The invention relates to a method for preparing a transition metal ion-doped porous CdIn2S4 photocatalyst. The invention aims to solve the problem of low catalytic activity in the conventional CdIn2S4 photocatalyst. The method comprises the following steps of: 1, dissolving bivalent cadmium salt, trivalent indium salt and thioacetamide into water or a nonaqueous solvent, adding a template agent and performing ultrasonication until the bivalent cadmium salt, the trivalent indium salt and the thioacetamide are dissolved completely; 2, adding transition metal salt and performing ultrasonication to obtain yellow colloidal precipitate; 3, performing heat treatment, cooling to room temperature, performing centrifugation, collecting the precipitate, and washing with distilled water; and 4, performing centrifugation, collecting the precipitate, ultrasonically washing with absolute ethanol, performing suction filtration and performing vacuum drying to obtain the transition metal ion-doped porous CdIn2S4 photocatalyst. The method is simple in process and simple and convenient in operation; no other impurities are produced; the prepared transition metal ion-doped porous CdIn2S4 photocatalyst has high visible light catalytic hydrogen production activity; and the method is applied in the field of photocatalytic materials.

The invention provides a solid electrolyte material, a preparation method thereof and a solid-state lithium battery. The chemical formula of the solid electrolyte material is LiaMX<3+> a-yX'y, wherein1.5 < = a < = 4.5, 0 < y < = 3.0, M is one of rare earth elements La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, X is one of Cl, Br and I, and X' is at least one of F, Cl and Br'. The invention provides a solid electrolyte material. By doping halogen anions, the electrochemical stability is effectively improved, the ionic conductivity is further effectively improved after cation doping, the material can be compatible with a commercial positive electrode material, the material can be applied to an all-solid-state lithium secondary battery, a battery with high safety andrelatively high chemical stability and electrochemical stability can be obtained, and the application prospect is wide.

The invention discloses a cation-doped gradient high-nickel multi-material precursor and a preparation method and application thereof. An automatic program control system is combined with a special-designed U-shaped reactor; material component ratio and a preparation process are controlled; therefore, a high-nickel multi-material precursor with nano-spherical microstructure is prepared in controllable manner. The precursor herein comprises a core and a multilayer shell portion attached to the same. A cathode material prepared with the precursor herein has continuously gradient changes in composition and structure; no evident boundary occurs in the cathode material. A core portion of the cathode material has high nickel content, so that the specific capacity is very high; a shell portion has more stable structure and better electrochemical properties; doping components help improve conductivity and battery rate performance; therefore, a gradient material with excellent comprehensive performance is attained. The preparation method herein is highly operable, easy to control and suitable for large-scale industrial production.

A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

The invention discloses double active ion doped bicrystal glass ceramic fluorescence temperature probe materials and a preparation method thereof. The glass ceramic comprise components as follows: 30 mol%-50 mol% of SiO2,15 mol%-30 mol% of Al2O3, 0-20 mol% of NaF, 0-20 mol% of LiF, 0-15 mol% of ZnO, 5 mol%-15 mol% of ReF3, 5 mol%-20 mol% of Ga2O3, 0.001 mol%-2 mol% of LnF3 and 0.001 mol%-2 mol% of TM compounds, wherein Ln is the rare earth ion luminescence center; TM is the transition metal ion luminescence center. The glass ceramic is prepared with a melt quenching method and through follow-up crystallization and heat treatment. The glass ceramic has strong temperature-dependent emission intensity and can be taken as a self-correcting fluorescence temperature detecting material, and the sensitivity at the highest temperature can reach 8% K<-1>.

An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconductor film and is highly reliable.The TFT of crystalline semiconductor film has the gate electrode formed from a first gate electrode 113 and a second gate electrode in close contact with said first gate electrode and gate insulating film. The LDD is formed by ion doping using said first gate electrode as a mask, and the source-drain region is formed using said second gate electrode as a mask. After that the second gate electrode in the desired region is selectively removed. In this way it is possible to form LDD region which overlaps with the second gate electrode.