531 results about "Ion doping" patented technology

The invention relates to a preparation method of a nickel ion doped modified ferric sodium pyrophosphate positive electrode material, and belongs to the technical field of sodium ion battery positive electrode materials. The nickel ion doped modified ferric sodium pyrophosphate positive electrode material is prepared by adopting an integrated process system of liquid phase uniform mixing, spray granulation and precise segmented calcination. According to the process system, atomic-scale uniform doping of nickel ions and a specific microstructure of a precursor are realized through spray drying, and a plurality of inherent key technical problems of low electronic conductivity, low ion diffusion rate, impurity phase generation and the like of an NFPP material are solved together through a synergistic effect with a subsequent calcining process; furthermore, the discharge capacity of the ferric sodium phosphate pyrophosphate composite material at high rate is improved, so that the battery has relatively high cycling stability.

The invention discloses a sodium ferric pyrophosphate material with a sodium storage dominant crystal face regulated and controlled by cation doping as well as a preparation method and application of the sodium ferric pyrophosphate material. The chemical formula of the prepared sodium ferric pyrophosphate material with the regulated and controlled crystal structure is Na < 4 > Fe < 2.97 > M < 0.03 > (PO4) < 2 > P < 2 > O < 7 >. Wherein M = Sr, or Sr and a second doping element, and the second doping element is selected from one of Cd, Bi, Mo, Ni and Al. The material is prepared by adopting a sol-gel method, an iron source, a chelating agent, a sodium source, a phosphorus source and doping elements are dissolved in deionized water, and stirring is performed until a gel state is formed; and drying and calcining twice to obtain a final product. The sodium ferric pyrophosphate electrode material prepared by the invention has more sodium storage dominant crystal faces, shows good electrochemical performance, has the advantages of simple preparation process, easily available raw materials and low cost, has remarkable industrial application value, and is easy for large-scale production.

The invention relates to the technical field of integrated circuits, in particular to a simulation test method and device for a semiconductor device. The method comprises the following steps: acquiring simulation parameter information of a first target device, wherein the simulation parameter information of the first target device comprises a first nuclear blocking correction parameter value; performing a simulation test based on the simulation parameter information of the first target device, and obtaining simulation transverse ion doping concentration distribution and a simulation threshold voltage value of the preset region; updating simulation parameter information of the first target device; performing a simulation test based on the updated simulation parameter information of the first target device, and obtaining another simulation transverse ion doping concentration distribution and another simulation threshold voltage value of the preset area; and taking the simulation threshold voltage value with the highest matching degree with the actual threshold voltage value of the first target device in all the simulation threshold voltage values as a target threshold voltage value, and determining the simulation transverse ion doping concentration distribution corresponding to the target threshold voltage value as target transverse ion doping concentration distribution.

The invention discloses an oxide-coated ion-doped sodium ferric sulfate positive electrode material as well as a preparation method and application thereof. The positive electrode material is formed by compounding a sodium ferric sulfate bulk phase material doped with various valence metal cations and anions and coated with carbon similar to a positive temperature coefficient thermosensitive metal oxide. Wherein the metal cations with various valence states are doped on Na or Na / Fe ion sites of the sodium ferric sulfate, the doped anions occupy part of three-dimensional S-O tetrahedron positions, the inorganic carbon in the carbon compound is uniformly distributed in the sodium ferric sulfate bulk phase material, and the organic carbon is uniformly distributed outside the sodium ferric sulfate bulk phase material. The positive electrode plate assembled battery prepared from the positive electrode material has the advantages of high reversible charge-discharge capacity, excellent cycle performance and rate capability and high electron and ion migration rate in a low-temperature environment. The method is low in raw material cost, simple in synthesis method, short in production period and suitable for large-scale continuous production.

The invention belongs to the technical field of positive electrode materials for lithium ion secondary batteries, and particularly discloses a high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material and a preparation method thereof, the chemical formula of the high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material is Li < 1.13 > (Mn < 0.522 > Ni < 0.261 > Co < 0.087 >) < 1-x > Nb < x > O < 2 >, and x is greater than or equal to 0 and less than or equal to 0.005. According to the high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material and the preparation method thereof, by doping the Nb doped high-nickel lithium-rich manganese-based positive electrode material, the voltage attenuation is effectively reduced, the long cycle performance of the material is improved, the rate capability of the material is improved, in addition, a firm Nb-O bond can effectively stabilize an oxygen lattice frame, and the high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material is prepared. Phase change is slowed down, so that irreversible release of oxygen is inhibited, and the structural stability of the material is improved.

The invention belongs to the technical field of sodium ion battery positive electrode materials, and discloses a preparation method and application of an iron ion doped sodium vanadium phosphate positive electrode material. Modification is carried out by doping iron ions in vanadium sites and taking citric acid as a carbon source for coating, iron nitrate nonahydrate serves as an iron source to participate in the modification process, meanwhile, citric acid is used for carrying out carbon coating on the material, and the citric acid and the doped iron ions synergistically increase the ionic conductivity, so that the problem that the sodium vanadium phosphate material is poor in conductivity is solved. Besides, in the sintering treatment process, the Na3V1.8 Fe0.2 (PO4) 3 / C positive electrode material obtained by doping 0.2 molar weight of iron ions and coating citric acid is always kept in the atmosphere of argon-hydrogen mixed gas, after circulation at the current density of 0.1 C to 20 C, the capacity recovery rate can reach up to 96.1%, and the capacity can still be kept to be 74.1% of the initial capacity at the high rate of 20 C; after 500 cycles under 1C current density, the capacity retention rate is 89.8%, while the capacity retention rate is only 72% after 500 cycles of pure NVP, the rate capability and cycling stability of the material are both improved, and the electrochemical performance of the material is effectively ensured.

The invention relates to the technical field of sodium-ion batteries, and discloses a preparation method and application of a cation-doped polyanion type sodium-ion battery positive electrode material, the chemical formula of the positive electrode material is Na < 4 + x > Fe < 3-y > TMy (PO4) 2P2O7, TM is one or more of transition metals with the same valence state as Fe < 2 + > in Mn, Co, Ni, Cu and Zn, x is more than 0 and less than or equal to 0.5, y is more than 0 and less than or equal to 0.4; precursor wet gel is obtained through a sol-gel process, and is sintered after being dried. The transition metal cations with the same valence state and different electronic structures are introduced into the Fe site of the material, and the electron transmission rate is effectively increased and the ion diffusion kinetics is enhanced by adjusting the Fe coordination environment; when the Na < 4 + x > Fe < 3-y > TMy (PO4) 2P2O7 positive electrode material prepared by the invention is applied to a sodium ion battery, high specific discharge capacity, excellent rate capability and cycle performance are shown.

The invention discloses a NiZnCu ferrite composite metasurface with a P wave band broadband and a low RCS (Radar Cross Section) based on 1-bit coding. Firstly, the impedance matching condition of the ferrite is improved through Mn < 2 + > ion doping, so that when the thickness of the NiZnCu ferrite is 2 mm, effective wave absorption with the reflection loss smaller than-10 dB is achieved within the range of 0.25 GHz to 1.0 GHz. Furthermore, NiZnCu ferrite is combined with a sandwich structure (square metal sheet / FR4 / metal back plate, 6 mm) to construct a 1-bit coding metasurface structure unit, optimal array arrangement is obtained by adopting a genetic algorithm, and directional reflection is reduced to the greatest extent. And finally, full-wave simulation software is used for verification, and the result shows that the NiZnCu ferrite composite coding metasurface can further reduce the RCS by using the diffuse reflection effect on the basis of keeping the ferrite wave absorbing effect, the range of the RCS is 0.50 GHz-0. 75 GHz, and the maximum RCS reduction value can reach 29.4 dB.

The invention provides application of a metal ion doped aminated graphene oxide membrane material in catalyzing CO2 to synthesize cyclic carbonate. The metal ion doped aminated graphene oxide membrane material has an acidic catalytic site and an alkaline catalytic site at the same time, and a two-dimensional interlayer channel of the metal ion doped aminated graphene oxide membrane material also has a confinement effect. In the process of catalyzing a CO2 / epoxy compound cycloaddition reaction, epoxy compound molecules entering a two-dimensional interlayer confinement channel of the metal ion doped aminated graphene oxide membrane material are subjected to efficient ring opening under the combined action of organic amine molecules and metal ions and react with CO2; and finally, realizing CO2 high-efficiency (the reaction time is less than or equal to 5 minutes, and the conversion rate of the epoxy compound is 75-100%) synthesis of the cyclic carbonate under the conditions of room temperature and low pressure (greater than 0.1 MPa and less than or equal to 1 MPa).

This invention discloses a core-shell structured lithium-rich manganese-based cathode material with the general formula Li. 1+a Mn x Co y Ni z O 2‑b‑d (XO c ) b X d It has a core-shell structure, with the core being a disordered polyanion-doped lithium-rich manganese-based material, Li. 1+a Mn x Co y Ni z O 2‑b (XO c ) b The outer shell is made of lithium-rich manganese-based material Li, which is doped with gradient non-metallic ions. 1+ a Mn x Co y Ni z O 2‑d X d This application also provides a method for preparing a core-shell structured lithium-rich manganese-based cathode material. The method employs a combination of rapid Joule heating and surface plasma cleaning to prepare the aforementioned core-shell structured lithium-rich manganese-based cathode material, achieving a bulk disordered structure design with polyanion doping and a core-shell structure with surface gradient non-metallic ion doping. Specifically, the bulk polyanions can immobilize transition metal elements to suppress their migration to the lithium layer, reducing harmful consumption of active sites and stabilizing the crystal structure. Furthermore, the strong bond energy between the surface non-metallic elements and the transition metal elements can suppress transition metal dissolution during cycling, reducing irreversible oxygen oxidation and inhibiting harmful phase transitions.

The invention provides a semiconductor device and a manufacturing method thereof, and is applied to the technical field of semiconductors. In the invention, the isolating ring structure comprises a first buried layer located in a substrate, the first buried layer comprises a plurality of ion injection layers, and doping types of ions injected into different ion injection layers are different. Ion implantation, such as P-type implantation, with the doping type opposite to that of a buried layer, such as an N-type buried layer, in the isolating ring structure is added around the buried layer, such as the N-type buried layer, so that punch-through, caused by low ion doping of the substrate, between the substrate and a first sub-buried layer, with the doping type opposite to that of the substrate, in the isolating ring structure is cut off; and the breakdown voltage of the high-voltage device is improved.

The invention provides an anion-cation co-doped solid electrolyte, a preparation method thereof, a solid-state battery and electric equipment, and relates to the field of solid electrolytes. The general chemical formula of the anion-cation co-doped solid electrolyte is Li < 2 + > (4-m) x Zr < 1-x > M < x > X < 6-ayAy, 0 < x < = 0.4, 0 < y < = 0.8, m is the valence state of M, and a is the valence state of A; m comprises a metal doping element with the ion radius larger than that of Zr < 4 + > and the valence state lower than that of Zr; x comprises a halogen element; a comprises one or more of O, S, N and P; the ion radius of A is smaller than X; the valence state of M comprises + 2 and / or + 3. The Li2ZrX6 solid electrolyte is subjected to anion and cation co-ion doping, so that the disorder degree of a crystal structure can be increased, a Li < + > transmission channel is widened, and the ionic conductivity is improved.

The invention belongs to the technical field of scintillation materials, and particularly relates to a chromium ion doped near-infrared scintillation crystal and a preparation method and application thereof. The chromium ion-doped near-infrared scintillation crystal has a molecular formula of A3B2-xCrxC3O12, x is greater than or equal to 0.005 and less than or equal to 0.1, and after a chromium ion-doped ultraviolet-visible light inorganic scintillator is adopted, light is emitted at the wavelength of 650-950 nm and has good wavelength matching with a silicon photoelectric detector. Besides, single crystal growth is carried out by adopting a Czochralski method, the crystal growth process is optimized, the ion doping concentration is regulated and controlled, the scintillation performance of the chromium ion doped near-infrared scintillation crystal in the near-infrared band is improved, the requirement of the chromium ion doped near-infrared scintillation crystal in the radiation detection field is further met, and the problem that an existing scintillation crystal is low in transparency is solved.

The invention is applicable to the technical field of photoelectricity, and provides a single-matrix white-light rare earth lead-free perovskite nanocrystal, a preparation method and application, and the single-matrix white-light rare earth lead-free perovskite nanocrystal is Eu < 3 + > ion doped Cs3TbCl6 nanocrystal. The rare earth ion Eu < 3 + > is doped into the Cs3TbCl6 nanocrystal, full-spectrum white light emission of blue light (matrix self-limiting state exciton emission), green light (Tb < 3 + > ion emission) and red light (Eu < 3 + > ion emission) is obtained, excellent thermal stability and environmental stability are achieved, and the nanocrystal material also shows excitation light dependent color adjustable emission (blue light, green light, red light and white light) and has good application prospects. The nanocrystal prepared based on a solution method can be applied to large-area flexible photoelectric devices; the fluorescent conversion layer can be used as a fluorescent conversion layer of a white light emitting diode with a high color rendering index, and can also be applied to anti-counterfeiting and information encryption.

The invention belongs to the technical field of materials, and particularly relates to an efficient yellow light-emitting perovskite material, a preparation method thereof and a light-emitting device. Wherein the chemical formula of the hybrid perovskite yellow light-emitting material is (C4H12N) 2In1-xCl5. DMF: Sbx, and x is more than 0 and less than or equal to 0.05. According to the antimony ion doped organic-inorganic hybrid perovskite yellow light-emitting material, the perovskite matrix material provides a suitable crystal field environment for doping of Sb, perovskite doping is achieved by replacing an In site with Sb, efficient yellow light emission of Sb can be achieved under the structure, the light-emitting efficiency is high and is close to 100%, and the structure is stable. In addition, the luminescent material does not contain heavy metal lead, so that the harm of the material to human bodies and the environment can be avoided.

The invention provides a Se anion-doped ferric phosphate pyrophosphate / carbon positive electrode active material and a preparation method and application thereof, and relates to the technical field of electrochemical energy storage device positive electrode active materials, the positive electrode active material comprises a ferric phosphate pyrophosphate base material and a carbon coating layer, in the crystal structure of the base material, part of O is partially replaced by Se, and the general formula of the base material is Na4Fe3 (PO4) 2 (P2O7-xSex), x is less than or equal to 1.0; o < 2-> is partially replaced by Se < 2-> in a crystal structure of a matrix material to construct a Se-doped solid solution, so that an electron energy band structure of the material is regulated and controlled; due to introduction of Se, the band gap of the material can be remarkably reduced, the electron conductivity can be improved, local lattice distortion can be caused, a Na < + > diffusion channel can be widened, and the ion migration capability can be improved; the material keeps a complete main phase structure, electron and ion transmission is synergistically optimized, and the rate capability is remarkably improved.

The invention discloses a lithium lanthanum zirconium composite oxide solid electrolyte and a preparation method and application thereof, the chemical general formula of the lithium lanthanum zirconium composite oxide solid electrolyte is Li7-aGabLa3-cCecZr2-dMeO12-fZf, M is a cation doped element, Z is an anion doped element, 0 < a < = 2, 0 < b < = 0.5, 0 < c < = 1.5, 0 < = d < = 1.5, 0 < = e < = 1.5, 0 < = f < = 0.5, and 0 < = f < = 0.5. According to the lithium lanthanum zirconium oxide solid electrolyte obtained by the preparation method, generation of holes in the electrolyte can be reduced, meanwhile, the density of the electrolyte is improved, and the interface impedance is reduced.

The invention relates to the technical field of photocatalytic materials, in particular to a multi-ion doped TiO2 nanosheet material suitable for degradation of dyes in water and a preparation method of the multi-ion doped TiO2 nanosheet material. The preparation method comprises the following steps: pre-embedding a self-sacrifice template in a germanium-tungsten composite doping solution, carrying out hydrothermal conversion to construct a Ge-W synergetic optimized regular TiO2 substrate, carrying out atomic layer deposition to realize nitrogen / silver uniform doping, and carrying out synergetic surface modification on silver nitrate-ethanolamine and perfluorosilane to prepare the TiO2 nanosheet material. Germanate serves as lattice strain guidance to guide TiO2 lattice growth to form a low-defect matrix, tungstate is cooperatively doped in the matrix to construct a strong built-in electric field to improve the charge separation efficiency, Ge-W elements cooperate to stabilize a bulk phase and a grain boundary, and a gradient protection barrier is constructed with selective shielding of a fluorosilane layer. The TiO2 catalyst is synergistically improved in the aspects of high catalytic activity and long-acting environmental stability, and is suitable for efficient pollutant purification in a complex water quality environment.

The invention discloses a bismuth oxide-based fuel cell electrolyte material and a preparation method thereof, and relates to the technical field of cell electrolyte materials. The material is composed of a trication-doped delta-Bi2O3 core and a zirconium oxide coating layer, the trication-doped delta-Bi2O3 core is co-doped with erbium, tungsten and aluminum ions, and the material comprises the following components in parts by mass: 75-80 parts of bismuth oxide (Bi2O3); 14 to 19 parts of erbium oxide (Er2O3); 1 to 3 parts of tungsten oxide (WO3); 1 to 3 parts of aluminum oxide (Al2O3); the zirconium oxide coating layer is formed by a coprecipitation method, and the thickness of the zirconium oxide coating layer is 5-20nm, so that the technical problems that the working temperature range of delta-Bi2O3 is difficult to broaden, and the low-temperature phase change and reduction under low oxygen partial pressure are difficult to inhibit are solved.

A semiconductor structure includes a gate structure region; a source region and a drain region disposed on two sides of the gate structure respectively. The gate structure region includes a channel region and a gate region disposed from inside to outside. The channel region is surrounded inside an inner cavity of the gate region and attached to the source region, the drain region, and the gate region, and an ion doping type of the drain region, an ion doping type of the source region and an ion doping type of the channel region are same.

The invention discloses a Zn / N co-doped porous soft and hard carbon composite negative electrode material and a preparation method thereof, and belongs to the technical field of secondary battery negative electrode materials. According to the method, bagasse is taken as a carbon source, asphalt is supplemented to regulate and control a carbon structure, a zinc source induces ion doping, micropore construction and Zn-NH2 bond formation, heteroatom doping is realized by a nitrogen source, and the hard carbon material with high N doping efficiency and a hierarchical porous structure is constructed through a doping-pore forming-stabilizing three-in-one cooperative regulation and control strategy. Through the integrated design of Zn induced doping stability, structure regulation and interface optimization, a new thought and a technical path are provided for developing a high-performance sodium ion battery negative electrode material.

The application belongs to the technical field of luminescent materials, and particularly relates to a nickel ion doped fluoride near-infrared two-region long-wave luminescent nano probe and a preparation method thereof, wherein the nano probe comprises a fluoride nanocrystal matrix and transition metal nickel ions as a luminescent center, or a core-shell structure nano probe formed by taking the above-mentioned substances as a shell layer and being externally coated with an inert shell layer or a homogenous epitaxial layer. The probe realizes wide-range regulation of an emission peak in a 1300nm to 2150nm near-infrared two-region long-wave band; through core-shell structure design and inert shell layer coating, surface defects are effectively passivated, luminescent quantum efficiency is significantly improved, and particle size is precisely controlled. Through nickel ion doping and crystal field regulation strategies, the application develops a new type of non-lanthanide near-infrared two-region long-wave luminescent material; the application has unique dual-wavelength excitation characteristics and wideband emission characteristics, and has wide application prospects in multi-channel biological detection and imaging analysis.

The invention provides an efficient light-emitting perovskite quantum dot for an LED and a preparation method and application of the efficient light-emitting perovskite quantum dot, according to the method, cesium chloride and cadmium chloride are used as main raw materials, the light-emitting efficiency is improved through tin ion doping, and efficient light-emitting perovskite is prepared. According to the perovskite prepared by the invention, a simple hydrothermal reaction process is utilized, and the purity and the yield of the product are improved to the maximum extent. According to the invention, environment-friendly raw materials different from the traditional lead-containing perovskite are adopted, and by improving the traditional process and adding the dopant, the luminous efficiency is greatly improved, and the influence on the environment is reduced at the same time. The perovskite prepared by the invention is simple in process, low in cost, high in luminous efficiency and easy for industrial and large-scale production, achieves the purpose of the invention, can be applied to an LED (Light Emitting Diode), and is particularly suitable for a high-resolution display screen and a high-efficiency light source. In addition, due to high color purity and stable light output performance, the invention has a wide application prospect in commercial and consumer electronics.

The application provides a method for reducing epitaxial resistance, and provides a semiconductor structure, which at least comprises: a source-drain region and a gate stack of an NMOS region; a source-drain region and a gate stack of a PMOS region; a first protective layer covering the source-drain region and the gate; the first protective layer on the PMOS region is opened by using photoetching and etching to form a first sidewall on the sidewall of the gate stack; a first epitaxial layer containing ion doping and a first cap layer on the first epitaxial layer are formed on the source-drain region of the PMOS region; the source-drain region of the PMOS region is subjected to rapid thermal annealing treatment, so that the doping ions in the first epitaxial layer diffuse to the first epitaxial layer at the bottom of the sidewall; the remaining first protective layer is removed, and then a second protective layer covering the NMOS region and the PMOS region is formed. The application reduces the channel resistance of the PMOS source-drain region to the gate edge, and improves the Idsat (saturation current) and Ioff (off-state current) performance of the device.

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

The invention belongs to the technical field of inorganic advanced nano materials, and particularly relates to a niobium ion doped hydrotalcite nano material, a preparation method thereof and an oxygen evolution method for electro-catalysis of alkaline water. The niobium ion doped hydrotalcite nanometer material comprises a conductive substrate, a hydrotalcite nanometer material growing on the surface of the conductive substrate and niobium ions doped in crystal lattices of the hydrotalcite nanometer material. The niobium ion doped hydrotalcite material is used as an anode catalyst for electrocatalysis of alkaline water reaction for the first time, niobium atoms can attract electrons around nickel atoms, the nickel atoms are promoted to be in a higher energy state after the reaction, the activity of alkaline water oxygen evolution reaction is improved, and the reaction efficiency is improved. Meanwhile, due to doping of niobium, the hydrotalcite material can be reconstructed earlier and faster in the oxygen evolution reaction process, and the occurrence rate of the oxygen evolution reaction is increased.

A rare earth ion doped complex oxide with Formula (I) (Ca1+xMgSi2Eu0025O6+x (x = 0.2, 0.4, 0.6, 0.8, 1.2, 1.4, 1.6, 1.8, 2.0)) or Formula (II) (Mg1-xCo3NiCuZnCexO8+x (x = 0.05, 0.1, 0.5, 1.0)). A method of preparing said rare earth ion doped complex oxide, and the use of said complex oxide in photoluminescence phosphor are also addressed. A method 5 of predicting photoluminescence emission characteristics of the complex oxide is further addressed.

The invention belongs to the technical field of detector preparation, and particularly discloses a preparation method of a B-site cation doped perovskite X-ray detector and a product. Comprising the following steps: respectively preparing a bottom-layer precursor solution SL with low doping concentration of B-site cations and a top-layer precursor solution SH with high doping concentration of B-site cations; firstly blade-coating the bottom-layer precursor solution SL on a base, then blade-coating the top-layer precursor solution SH on the surface of the base in a laminated manner to form a wet mold with a B-site cation longitudinal concentration gradient, and introducing a 2D organic cation solution into the surface of the wet mold to perform an in-situ reaction so as to construct a 2D / 3D perovskite heterostructure; and carrying out segmented annealing crystallization on the wet mold constructed with the 2D / 3D perovskite heterostructure to obtain a compact gradient doped perovskite thick film, and then preparing a metal electrode on the surface of the gradient doped perovskite thick film. According to the invention, doped ions adjust an energy band structure, the effective quality of carriers is reduced, and the mobility is improved, so that the photo-generated current response and the signal-to-noise ratio are improved.

The application discloses a vanadium-based nano drug capable of reversing cisplatin drug resistance through multiple targets and a preparation method thereof.The preparation method of the drug comprises the following steps: (1) preparation of mesoporous silica; (2) vanadium ion doping; (3) surface amino modification; (4) loading of a Pt(IV) prodrug; and (5) PDGF modification on the surface of the drug-loaded nanoparticles, thereby obtaining the vanadium-based nano drug.The vanadium-based nano drug prepared by the method has excellent performance, can reverse cisplatin drug resistance through multiple targets, and provides a new idea for constructing a lung cancer precision treatment scheme for reversing cisplatin drug resistance through multiple targets.

This invention relates to the field of encryption and anti-counterfeiting technology, specifically to a method for preparing and using an organic Sn(IV)-based metal halide reversible light-emitting conversion triple anti-counterfeiting material, comprising introducing organic ligands into a Sn(IV)X4 lattice and doping with ns 2 This invention uses Sn(IV) with a high oxidation state to replace Pb(II) in order to obtain anti-counterfeiting materials. 4+ The outer electron configuration is 4d 10 5s 0 The absence of unstable 5s orbitals gives Sn(IV)-based metal halides their typically excellent environmental and thermal stability, providing the compounds with a rigid crystal structure and stereochemical inertness. Furthermore, through ns... 2 Type Sb metal ions 3+ Doping strategies are employed to enhance the luminescence efficiency of low-dimensional organotin (IV)-based metal halides. This invention utilizes Sb... 3+ Ion doping methods are used to modulate the optical properties of compounds. Sb 3+ Ions belong to ns 2 Type metal ions and Sn 4+ With similar ionic radii and unique photophysical properties, it solves the problem of low luminous efficiency in existing luminescent materials.