407 results about "Ion doping" patented technology

The invention relates to a preparation method of a nickel ion doped modified ferric sodium pyrophosphate positive electrode material, and belongs to the technical field of sodium ion battery positive electrode materials. The nickel ion doped modified ferric sodium pyrophosphate positive electrode material is prepared by adopting an integrated process system of liquid phase uniform mixing, spray granulation and precise segmented calcination. According to the process system, atomic-scale uniform doping of nickel ions and a specific microstructure of a precursor are realized through spray drying, and a plurality of inherent key technical problems of low electronic conductivity, low ion diffusion rate, impurity phase generation and the like of an NFPP material are solved together through a synergistic effect with a subsequent calcining process; furthermore, the discharge capacity of the ferric sodium phosphate pyrophosphate composite material at high rate is improved, so that the battery has relatively high cycling stability.

The invention relates to the technical field of integrated circuits, in particular to a simulation test method and device for a semiconductor device. The method comprises the following steps: acquiring simulation parameter information of a first target device, wherein the simulation parameter information of the first target device comprises a first nuclear blocking correction parameter value; performing a simulation test based on the simulation parameter information of the first target device, and obtaining simulation transverse ion doping concentration distribution and a simulation threshold voltage value of the preset region; updating simulation parameter information of the first target device; performing a simulation test based on the updated simulation parameter information of the first target device, and obtaining another simulation transverse ion doping concentration distribution and another simulation threshold voltage value of the preset area; and taking the simulation threshold voltage value with the highest matching degree with the actual threshold voltage value of the first target device in all the simulation threshold voltage values as a target threshold voltage value, and determining the simulation transverse ion doping concentration distribution corresponding to the target threshold voltage value as target transverse ion doping concentration distribution.

The invention discloses an oxide-coated ion-doped sodium ferric sulfate positive electrode material as well as a preparation method and application thereof. The positive electrode material is formed by compounding a sodium ferric sulfate bulk phase material doped with various valence metal cations and anions and coated with carbon similar to a positive temperature coefficient thermosensitive metal oxide. Wherein the metal cations with various valence states are doped on Na or Na / Fe ion sites of the sodium ferric sulfate, the doped anions occupy part of three-dimensional S-O tetrahedron positions, the inorganic carbon in the carbon compound is uniformly distributed in the sodium ferric sulfate bulk phase material, and the organic carbon is uniformly distributed outside the sodium ferric sulfate bulk phase material. The positive electrode plate assembled battery prepared from the positive electrode material has the advantages of high reversible charge-discharge capacity, excellent cycle performance and rate capability and high electron and ion migration rate in a low-temperature environment. The method is low in raw material cost, simple in synthesis method, short in production period and suitable for large-scale continuous production.

The invention belongs to the technical field of positive electrode materials for lithium ion secondary batteries, and particularly discloses a high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material and a preparation method thereof, the chemical formula of the high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material is Li < 1.13 > (Mn < 0.522 > Ni < 0.261 > Co < 0.087 >) < 1-x > Nb < x > O < 2 >, and x is greater than or equal to 0 and less than or equal to 0.005. According to the high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material and the preparation method thereof, by doping the Nb doped high-nickel lithium-rich manganese-based positive electrode material, the voltage attenuation is effectively reduced, the long cycle performance of the material is improved, the rate capability of the material is improved, in addition, a firm Nb-O bond can effectively stabilize an oxygen lattice frame, and the high-valence cation doped high-nickel lithium-rich manganese-based positive electrode material is prepared. Phase change is slowed down, so that irreversible release of oxygen is inhibited, and the structural stability of the material is improved.

The invention relates to the technical field of sodium-ion batteries, and discloses a preparation method and application of a cation-doped polyanion type sodium-ion battery positive electrode material, the chemical formula of the positive electrode material is Na < 4 + x > Fe < 3-y > TMy (PO4) 2P2O7, TM is one or more of transition metals with the same valence state as Fe < 2 + > in Mn, Co, Ni, Cu and Zn, x is more than 0 and less than or equal to 0.5, y is more than 0 and less than or equal to 0.4; precursor wet gel is obtained through a sol-gel process, and is sintered after being dried. The transition metal cations with the same valence state and different electronic structures are introduced into the Fe site of the material, and the electron transmission rate is effectively increased and the ion diffusion kinetics is enhanced by adjusting the Fe coordination environment; when the Na < 4 + x > Fe < 3-y > TMy (PO4) 2P2O7 positive electrode material prepared by the invention is applied to a sodium ion battery, high specific discharge capacity, excellent rate capability and cycle performance are shown.

The invention provides application of a metal ion doped aminated graphene oxide membrane material in catalyzing CO2 to synthesize cyclic carbonate. The metal ion doped aminated graphene oxide membrane material has an acidic catalytic site and an alkaline catalytic site at the same time, and a two-dimensional interlayer channel of the metal ion doped aminated graphene oxide membrane material also has a confinement effect. In the process of catalyzing a CO2 / epoxy compound cycloaddition reaction, epoxy compound molecules entering a two-dimensional interlayer confinement channel of the metal ion doped aminated graphene oxide membrane material are subjected to efficient ring opening under the combined action of organic amine molecules and metal ions and react with CO2; and finally, realizing CO2 high-efficiency (the reaction time is less than or equal to 5 minutes, and the conversion rate of the epoxy compound is 75-100%) synthesis of the cyclic carbonate under the conditions of room temperature and low pressure (greater than 0.1 MPa and less than or equal to 1 MPa).

This invention discloses a core-shell structured lithium-rich manganese-based cathode material with the general formula Li. 1+a Mn x Co y Ni z O 2‑b‑d (XO c ) b X d It has a core-shell structure, with the core being a disordered polyanion-doped lithium-rich manganese-based material, Li. 1+a Mn x Co y Ni z O 2‑b (XO c ) b The outer shell is made of lithium-rich manganese-based material Li, which is doped with gradient non-metallic ions. 1+ a Mn x Co y Ni z O 2‑d X d This application also provides a method for preparing a core-shell structured lithium-rich manganese-based cathode material. The method employs a combination of rapid Joule heating and surface plasma cleaning to prepare the aforementioned core-shell structured lithium-rich manganese-based cathode material, achieving a bulk disordered structure design with polyanion doping and a core-shell structure with surface gradient non-metallic ion doping. Specifically, the bulk polyanions can immobilize transition metal elements to suppress their migration to the lithium layer, reducing harmful consumption of active sites and stabilizing the crystal structure. Furthermore, the strong bond energy between the surface non-metallic elements and the transition metal elements can suppress transition metal dissolution during cycling, reducing irreversible oxygen oxidation and inhibiting harmful phase transitions.

The invention provides a semiconductor device and a manufacturing method thereof, and is applied to the technical field of semiconductors. In the invention, the isolating ring structure comprises a first buried layer located in a substrate, the first buried layer comprises a plurality of ion injection layers, and doping types of ions injected into different ion injection layers are different. Ion implantation, such as P-type implantation, with the doping type opposite to that of a buried layer, such as an N-type buried layer, in the isolating ring structure is added around the buried layer, such as the N-type buried layer, so that punch-through, caused by low ion doping of the substrate, between the substrate and a first sub-buried layer, with the doping type opposite to that of the substrate, in the isolating ring structure is cut off; and the breakdown voltage of the high-voltage device is improved.

The invention provides an anion-cation co-doped solid electrolyte, a preparation method thereof, a solid-state battery and electric equipment, and relates to the field of solid electrolytes. The general chemical formula of the anion-cation co-doped solid electrolyte is Li < 2 + > (4-m) x Zr < 1-x > M < x > X < 6-ayAy, 0 < x < = 0.4, 0 < y < = 0.8, m is the valence state of M, and a is the valence state of A; m comprises a metal doping element with the ion radius larger than that of Zr < 4 + > and the valence state lower than that of Zr; x comprises a halogen element; a comprises one or more of O, S, N and P; the ion radius of A is smaller than X; the valence state of M comprises + 2 and / or + 3. The Li2ZrX6 solid electrolyte is subjected to anion and cation co-ion doping, so that the disorder degree of a crystal structure can be increased, a Li < + > transmission channel is widened, and the ionic conductivity is improved.

The invention belongs to the technical field of scintillation materials, and particularly relates to a chromium ion doped near-infrared scintillation crystal and a preparation method and application thereof. The chromium ion-doped near-infrared scintillation crystal has a molecular formula of A3B2-xCrxC3O12, x is greater than or equal to 0.005 and less than or equal to 0.1, and after a chromium ion-doped ultraviolet-visible light inorganic scintillator is adopted, light is emitted at the wavelength of 650-950 nm and has good wavelength matching with a silicon photoelectric detector. Besides, single crystal growth is carried out by adopting a Czochralski method, the crystal growth process is optimized, the ion doping concentration is regulated and controlled, the scintillation performance of the chromium ion doped near-infrared scintillation crystal in the near-infrared band is improved, the requirement of the chromium ion doped near-infrared scintillation crystal in the radiation detection field is further met, and the problem that an existing scintillation crystal is low in transparency is solved.

The invention is applicable to the technical field of photoelectricity, and provides a single-matrix white-light rare earth lead-free perovskite nanocrystal, a preparation method and application, and the single-matrix white-light rare earth lead-free perovskite nanocrystal is Eu < 3 + > ion doped Cs3TbCl6 nanocrystal. The rare earth ion Eu < 3 + > is doped into the Cs3TbCl6 nanocrystal, full-spectrum white light emission of blue light (matrix self-limiting state exciton emission), green light (Tb < 3 + > ion emission) and red light (Eu < 3 + > ion emission) is obtained, excellent thermal stability and environmental stability are achieved, and the nanocrystal material also shows excitation light dependent color adjustable emission (blue light, green light, red light and white light) and has good application prospects. The nanocrystal prepared based on a solution method can be applied to large-area flexible photoelectric devices; the fluorescent conversion layer can be used as a fluorescent conversion layer of a white light emitting diode with a high color rendering index, and can also be applied to anti-counterfeiting and information encryption.

The invention provides a Se anion-doped ferric phosphate pyrophosphate / carbon positive electrode active material and a preparation method and application thereof, and relates to the technical field of electrochemical energy storage device positive electrode active materials, the positive electrode active material comprises a ferric phosphate pyrophosphate base material and a carbon coating layer, in the crystal structure of the base material, part of O is partially replaced by Se, and the general formula of the base material is Na4Fe3 (PO4) 2 (P2O7-xSex), x is less than or equal to 1.0; o < 2-> is partially replaced by Se < 2-> in a crystal structure of a matrix material to construct a Se-doped solid solution, so that an electron energy band structure of the material is regulated and controlled; due to introduction of Se, the band gap of the material can be remarkably reduced, the electron conductivity can be improved, local lattice distortion can be caused, a Na < + > diffusion channel can be widened, and the ion migration capability can be improved; the material keeps a complete main phase structure, electron and ion transmission is synergistically optimized, and the rate capability is remarkably improved.

The invention relates to the technical field of photocatalytic materials, in particular to a multi-ion doped TiO2 nanosheet material suitable for degradation of dyes in water and a preparation method of the multi-ion doped TiO2 nanosheet material. The preparation method comprises the following steps: pre-embedding a self-sacrifice template in a germanium-tungsten composite doping solution, carrying out hydrothermal conversion to construct a Ge-W synergetic optimized regular TiO2 substrate, carrying out atomic layer deposition to realize nitrogen / silver uniform doping, and carrying out synergetic surface modification on silver nitrate-ethanolamine and perfluorosilane to prepare the TiO2 nanosheet material. Germanate serves as lattice strain guidance to guide TiO2 lattice growth to form a low-defect matrix, tungstate is cooperatively doped in the matrix to construct a strong built-in electric field to improve the charge separation efficiency, Ge-W elements cooperate to stabilize a bulk phase and a grain boundary, and a gradient protection barrier is constructed with selective shielding of a fluorosilane layer. The TiO2 catalyst is synergistically improved in the aspects of high catalytic activity and long-acting environmental stability, and is suitable for efficient pollutant purification in a complex water quality environment.

A semiconductor structure includes a gate structure region; a source region and a drain region disposed on two sides of the gate structure respectively. The gate structure region includes a channel region and a gate region disposed from inside to outside. The channel region is surrounded inside an inner cavity of the gate region and attached to the source region, the drain region, and the gate region, and an ion doping type of the drain region, an ion doping type of the source region and an ion doping type of the channel region are same.

The invention discloses a Zn / N co-doped porous soft and hard carbon composite negative electrode material and a preparation method thereof, and belongs to the technical field of secondary battery negative electrode materials. According to the method, bagasse is taken as a carbon source, asphalt is supplemented to regulate and control a carbon structure, a zinc source induces ion doping, micropore construction and Zn-NH2 bond formation, heteroatom doping is realized by a nitrogen source, and the hard carbon material with high N doping efficiency and a hierarchical porous structure is constructed through a doping-pore forming-stabilizing three-in-one cooperative regulation and control strategy. Through the integrated design of Zn induced doping stability, structure regulation and interface optimization, a new thought and a technical path are provided for developing a high-performance sodium ion battery negative electrode material.

The application belongs to the technical field of luminescent materials, and particularly relates to a nickel ion doped fluoride near-infrared two-region long-wave luminescent nano probe and a preparation method thereof, wherein the nano probe comprises a fluoride nanocrystal matrix and transition metal nickel ions as a luminescent center, or a core-shell structure nano probe formed by taking the above-mentioned substances as a shell layer and being externally coated with an inert shell layer or a homogenous epitaxial layer. The probe realizes wide-range regulation of an emission peak in a 1300nm to 2150nm near-infrared two-region long-wave band; through core-shell structure design and inert shell layer coating, surface defects are effectively passivated, luminescent quantum efficiency is significantly improved, and particle size is precisely controlled. Through nickel ion doping and crystal field regulation strategies, the application develops a new type of non-lanthanide near-infrared two-region long-wave luminescent material; the application has unique dual-wavelength excitation characteristics and wideband emission characteristics, and has wide application prospects in multi-channel biological detection and imaging analysis.

The application provides a method for reducing epitaxial resistance, and provides a semiconductor structure, which at least comprises: a source-drain region and a gate stack of an NMOS region; a source-drain region and a gate stack of a PMOS region; a first protective layer covering the source-drain region and the gate; the first protective layer on the PMOS region is opened by using photoetching and etching to form a first sidewall on the sidewall of the gate stack; a first epitaxial layer containing ion doping and a first cap layer on the first epitaxial layer are formed on the source-drain region of the PMOS region; the source-drain region of the PMOS region is subjected to rapid thermal annealing treatment, so that the doping ions in the first epitaxial layer diffuse to the first epitaxial layer at the bottom of the sidewall; the remaining first protective layer is removed, and then a second protective layer covering the NMOS region and the PMOS region is formed. The application reduces the channel resistance of the PMOS source-drain region to the gate edge, and improves the Idsat (saturation current) and Ioff (off-state current) performance of the device.

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

The invention belongs to the technical field of detector preparation, and particularly discloses a preparation method of a B-site cation doped perovskite X-ray detector and a product. Comprising the following steps: respectively preparing a bottom-layer precursor solution SL with low doping concentration of B-site cations and a top-layer precursor solution SH with high doping concentration of B-site cations; firstly blade-coating the bottom-layer precursor solution SL on a base, then blade-coating the top-layer precursor solution SH on the surface of the base in a laminated manner to form a wet mold with a B-site cation longitudinal concentration gradient, and introducing a 2D organic cation solution into the surface of the wet mold to perform an in-situ reaction so as to construct a 2D / 3D perovskite heterostructure; and carrying out segmented annealing crystallization on the wet mold constructed with the 2D / 3D perovskite heterostructure to obtain a compact gradient doped perovskite thick film, and then preparing a metal electrode on the surface of the gradient doped perovskite thick film. According to the invention, doped ions adjust an energy band structure, the effective quality of carriers is reduced, and the mobility is improved, so that the photo-generated current response and the signal-to-noise ratio are improved.

The application discloses a vanadium-based nano drug capable of reversing cisplatin drug resistance through multiple targets and a preparation method thereof.The preparation method of the drug comprises the following steps: (1) preparation of mesoporous silica; (2) vanadium ion doping; (3) surface amino modification; (4) loading of a Pt(IV) prodrug; and (5) PDGF modification on the surface of the drug-loaded nanoparticles, thereby obtaining the vanadium-based nano drug.The vanadium-based nano drug prepared by the method has excellent performance, can reverse cisplatin drug resistance through multiple targets, and provides a new idea for constructing a lung cancer precision treatment scheme for reversing cisplatin drug resistance through multiple targets.

This invention relates to the field of encryption and anti-counterfeiting technology, specifically to a method for preparing and using an organic Sn(IV)-based metal halide reversible light-emitting conversion triple anti-counterfeiting material, comprising introducing organic ligands into a Sn(IV)X4 lattice and doping with ns 2 This invention uses Sn(IV) with a high oxidation state to replace Pb(II) in order to obtain anti-counterfeiting materials. 4+ The outer electron configuration is 4d 10 5s 0 The absence of unstable 5s orbitals gives Sn(IV)-based metal halides their typically excellent environmental and thermal stability, providing the compounds with a rigid crystal structure and stereochemical inertness. Furthermore, through ns... 2 Type Sb metal ions 3+ Doping strategies are employed to enhance the luminescence efficiency of low-dimensional organotin (IV)-based metal halides. This invention utilizes Sb... 3+ Ion doping methods are used to modulate the optical properties of compounds. Sb 3+ Ions belong to ns 2 Type metal ions and Sn 4+ With similar ionic radii and unique photophysical properties, it solves the problem of low luminous efficiency in existing luminescent materials.

The invention relates to the technical field of photocatalytic hydrogen production, and provides a TNM-Fe-Co II type heterojunction catalyst as well as a preparation method and application thereof in photocatalytic hydrogen production. The TNM-Fe-xCo photocatalytic material is prepared through ion doping and TiO2 compounding strategies: firstly, through a metal ion co-doping strategy, Co < 2 + > is introduced into an NH2-MIL-Fe skeleton to construct a bimetallic active center, so that not only is an additional active site provided, but also compounding of photo-induced carriers is inhibited through a unique metal-metal charge transition (MMCT) process, and the photocatalytic performance of the photocatalytic material is improved; therefore, the photocatalytic performance is improved; tiO2 is further compounded, and the separation of photon-generated carriers is enhanced through the construction of heterojunction, so that the photocatalytic activity is improved. The composite material has excellent hydrogen production performance under the condition of no noble metal auxiliary agent, shows excellent performance and wide application prospect of the composite material in the field of photocatalysis, and provides a new design strategy for development of high-performance photocatalysts.

The disclosure provides a metal ion doped lithium iron phosphate material and a preparation method and application thereof, and relates to the technical field of lithium batteries. The metal ion doped lithium iron phosphate material comprises flaky lithium iron phosphate and metal ions doped on the flaky lithium iron phosphate, and the flaky lithium iron phosphate has a porous structure. The method comprises the following steps: using an organic metal compound as a deposition raw material to deposit a carbon layer and metal oxide particles on the surface of a porous Fe2O3 flaky precursor to obtain a composite material; mixing the composite material, a lithium source and a phosphorus source according to a stoichiometric ratio, and then drying and sintering to obtain an M-LiFePO4 material. The M-LiFePO4 prepared by the disclosure has good uniformity and is not prone to agglomeration, inherits the two-dimensional flaky morphology of the precursor material and has a porous structure, has good rapid charging and discharging capacity, and improves the rate performance of the lithium iron phosphate material through doping of metal ions.

The invention provides a sodium ion battery positive electrode modified material and a preparation method thereof, and relates to the technical field of sodium ion battery materials. The preparation method of the sodium ion battery positive electrode modified material comprises the following steps: providing a nickel source, a manganese source and an iron source, preparing a transition metal oxide precursor, and preparing a single crystal NaNixFeyMnzO2 material from the transition metal oxide precursor and a sodium salt through a sintering process, 0.2 < = x < = 0.4, 0.1 < = y < = 0.4, 0.2 < = z < = 0.4, the single crystal NaNi < x > Fe < y > Mn < z > O < 2 > material is subjected to ion doping and co-coating treatment to obtain the sodium ion battery positive electrode modified material. The prepared battery positive electrode modified material can improve the cycling stability of the battery.

The invention relates to a preparation method of a gallium ion-doped lithium lanthanum zirconium oxide solid electrolyte, and belongs to the field of solid electrolytes. The preparation method comprises the following steps: adding lithium carbonate, lanthanum oxide, zirconium oxide, gallium oxide, a Ga < 3 + >-hydrogen-based silsesquioxane chelating auxiliary agent and ethanol into a ball milling tank for ball milling, drying, and then putting into a muffle furnace for pre-sintering to obtain pre-sintered powder; putting the pre-sintered powder into the ball milling tank again for ball milling, and tabletting to obtain a green body; and placing the green body in a sintering furnace, and carrying out high-temperature sintering in an oxygen atmosphere to obtain the gallium ion-doped lithium lanthanum zirconium oxide solid electrolyte, the Ga < 3 + >-hydrogen-based silsesquioxane chelating auxiliary agent is prepared from gallium fluoride, lithium carbonate, hydrogen-based silsesquioxane, citric acid and deionized water; by doping gallium ions, the ionic conductivity can be remarkably improved; and after the lithium lanthanum zirconium oxide is placed in an air atmosphere for 30 days, the retention rate of ionic conductivity is greater than 97%, and the problem of poor stability of lithium lanthanum zirconium oxide is solved.

The invention provides an erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material and a preparation method thereof, and belongs to the technical field of crossing of functional ceramic materials and optical sensing technologies, the erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material comprises a matrix phase and doped ions, the matrix phase is Al2O3-YAG (aluminum oxide-yttrium aluminum garnet) composite ceramic; wherein the mass ratio of Al2O3 is 30%-70%, and the mass ratio of YAG is 30%-70%; the doping ions are Er < 3 + > and Yb < 3 + >, and based on the total molar weight of the matrix phase, the doping concentration of Er < 3 + > is 0.5-3 mol%, and the doping concentration of Yb < 3 + > is 5-20 mol%; the sensing material realizes temperature sensing under the excitation of 980 nm laser and on the basis of the energy level emission conditions of 2H11 / 2 to 4I15 / 2 and 4S3 / 2 to 4I15 / 2 of Er < 3 + >. The Al2O3-YAG composite ceramic is used as an Er < 3 + > / Yb < 3 + > doped matrix for optical temperature measurement for the first time, and the high-temperature stability is superior to that of fluorescent powder and glass materials; the mechanical strength and the thermal shock resistance are obviously improved; elements are uniformly distributed, and the concentration quenching effect is avoided.

A method for compensating electrical properties of a super-junction device structure, comprising: providing a first batch of wafers, the first batch of wafers comprising a test wafer and a plurality of to-be-compensated wafers; forming a first epitaxial layer in the test wafer, the first epitaxial layer having first ions; obtaining a first resistance value of the first epitaxial layer; obtaining an optimal resistance value corresponding to the first epitaxial layer in a super-junction device structure of the first batch of wafers; obtaining an epitaxial doping process parameter deviation value corresponding to adjustment of the first resistance value to the optimal resistance value; compensating an epitaxial doping process according to the epitaxial doping process parameter deviation value; and forming a second epitaxial layer in the to-be-compensated wafers using the compensated process parameter. By converting the total amount of first ion doping into an accurate resistance value for characterization, the process parameter adjustment has an accurate basis, so as to improve the doping mismatch of the super-junction device structure in the to-be-compensated wafers and improve the electrical properties of the super-junction device structure.

The invention discloses a nickel oxide / SAMs double-layer hole transport layer and a preparation method and application thereof.The preparation method comprises the steps that high-valence metal cation salt is added into a NiOx precursor solution to obtain a mixed solution, then the mixed solution is sprayed to the surface of a substrate for heat treatment, and a hydroxylated nickel oxide layer is obtained; spin-coating the surface of the hydroxylated nickel oxide layer with an SAM solution, and carrying out annealing treatment to obtain a nickel oxide / SAMs double-layer hole transport layer; the high-valence metal cations comprise one or more of V < 5 + >, Mn < 6 + > and Ce < 4 + >; according to the invention, through a cooperative regulation strategy of combining high-valence metal cation doping and sintering under a high-humidity condition, two major problems of difficulty in uniform anchoring of SAMs and low intrinsic ion mobility existing in a nickel oxide hole transport layer are synchronously solved.

The application discloses an electrode material with phase transition caused by different ion doping, and is implemented according to the following steps: (NH4)2SO4, (NH4)2S2O8, MnSO4 and Al 3+ Compound or Ce 3+ Compound or Ag + Compound or Co 2+ Compound; the weighed (NH4)2SO4, (NH4)2S2O8 and MnSO4 are dissolved in deionized water and uniformly stirred to obtain a mixed solution A; the weighed Al 3+ Compound or Ce 3+ Compound or Ag + Compound or Co 2+ Compound is added into the mixed solution A and uniformly stirred to obtain a mixed solution B; the mixed solution B is transferred into a stainless steel autoclave with a polytetrafluoroethylene liner, and is reacted at 140 DEG C to 200 DEG C for 8h to 12h; the stainless steel autoclave is naturally cooled to room temperature, the precipitate is washed with deionized water for multiple times, and then is centrifuged and dried to obtain a manganese-based material with different ion doping.

The invention discloses a high-performance long-cycle lithium iron phosphate positive electrode material and a preparation method thereof, and solves the technical problem of poor long cycle performance of existing lithium iron phosphate due to non-uniform and unstable carbon layer network. The preparation method comprises the following steps: S1, mixing and ball-milling iron phosphate A and iron phosphate B with different specific surface areas, lithium carbonate, a carbon source, an organic polymer dispersant and a metal ion doping agent to form precursor slurry; s2, drying the precursor slurry to obtain a precursor yellow material; s3, performing primary calcination on the precursor yellow material in an inert gas atmosphere to obtain lithium iron phosphate powder, and crushing the lithium iron phosphate powder; s4, uniformly mixing the crushed lithium iron phosphate with a carbon source, a nitrogen-containing organic matter and a metal ion doping agent, and carrying out spray drying after ball milling; and S5, carrying out secondary calcination on the spray-dried material in an inert gas atmosphere to obtain the lithium iron phosphate with the nitrogen atom-doped carbon coating layer. The lithium iron phosphate positive electrode material has the advantages of stable structure, good long cycle performance and the like.