The invention discloses a garnet-structured near-
infrared luminescent
scintillator, and the preparation method of the
scintillator adopts an improved high-temperature
solid phase method, and successfully prepares a Cr < 3 + > and Sb < 3 + > doped
scandium gallium garnet
scintillator through the process steps of batching,
grinding, pre-
sintering, high-temperature
sintering, re-
sintering and the like. Specifically, an
oxide precursor is accurately mixed according to a stoichiometric ratio, and is sintered under a high-temperature condition (the sintering temperature is 1400-1600 DEG C). In the process, the
crystal structure of the material is gradually formed, and meanwhile,
doping ions are promoted to be uniformly doped into
crystal lattices of the
scandium gallium garnet by controlling the sintering time and temperature. In the
crystal growth process, the local electronic environment in crystal lattices is optimized through selection and
ion doping of A-site ions, and efficient transfer of
excited state energy from a matrix to a light-emitting center is promoted. Under the processes of pre-sintering, high-temperature sintering, re-sintering and the like, doped ions in the crystal are distributed more uniformly, the formation of a non-radiative recombination center is reduced, and the luminous efficiency and the stability of the scintillator are improved.