207 results about "Ion doping" patented technology

The invention relates to a preparation method of a nickel ion doped modified ferric sodium pyrophosphate positive electrode material, and belongs to the technical field of sodium ion battery positive electrode materials. The nickel ion doped modified ferric sodium pyrophosphate positive electrode material is prepared by adopting an integrated process system of liquid phase uniform mixing, spray granulation and precise segmented calcination. According to the process system, atomic-scale uniform doping of nickel ions and a specific microstructure of a precursor are realized through spray drying, and a plurality of inherent key technical problems of low electronic conductivity, low ion diffusion rate, impurity phase generation and the like of an NFPP material are solved together through a synergistic effect with a subsequent calcining process; furthermore, the discharge capacity of the ferric sodium phosphate pyrophosphate composite material at high rate is improved, so that the battery has relatively high cycling stability.

The application belongs to the technical field of luminescent materials, and particularly relates to a nickel ion doped fluoride near-infrared two-region long-wave luminescent nano probe and a preparation method thereof, wherein the nano probe comprises a fluoride nanocrystal matrix and transition metal nickel ions as a luminescent center, or a core-shell structure nano probe formed by taking the above-mentioned substances as a shell layer and being externally coated with an inert shell layer or a homogenous epitaxial layer. The probe realizes wide-range regulation of an emission peak in a 1300nm to 2150nm near-infrared two-region long-wave band; through core-shell structure design and inert shell layer coating, surface defects are effectively passivated, luminescent quantum efficiency is significantly improved, and particle size is precisely controlled. Through nickel ion doping and crystal field regulation strategies, the application develops a new type of non-lanthanide near-infrared two-region long-wave luminescent material; the application has unique dual-wavelength excitation characteristics and wideband emission characteristics, and has wide application prospects in multi-channel biological detection and imaging analysis.

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

The invention belongs to the technical field of detector preparation, and particularly discloses a preparation method of a B-site cation doped perovskite X-ray detector and a product. Comprising the following steps: respectively preparing a bottom-layer precursor solution SL with low doping concentration of B-site cations and a top-layer precursor solution SH with high doping concentration of B-site cations; firstly blade-coating the bottom-layer precursor solution SL on a base, then blade-coating the top-layer precursor solution SH on the surface of the base in a laminated manner to form a wet mold with a B-site cation longitudinal concentration gradient, and introducing a 2D organic cation solution into the surface of the wet mold to perform an in-situ reaction so as to construct a 2D / 3D perovskite heterostructure; and carrying out segmented annealing crystallization on the wet mold constructed with the 2D / 3D perovskite heterostructure to obtain a compact gradient doped perovskite thick film, and then preparing a metal electrode on the surface of the gradient doped perovskite thick film. According to the invention, doped ions adjust an energy band structure, the effective quality of carriers is reduced, and the mobility is improved, so that the photo-generated current response and the signal-to-noise ratio are improved.

The application discloses a vanadium-based nano drug capable of reversing cisplatin drug resistance through multiple targets and a preparation method thereof.The preparation method of the drug comprises the following steps: (1) preparation of mesoporous silica; (2) vanadium ion doping; (3) surface amino modification; (4) loading of a Pt(IV) prodrug; and (5) PDGF modification on the surface of the drug-loaded nanoparticles, thereby obtaining the vanadium-based nano drug.The vanadium-based nano drug prepared by the method has excellent performance, can reverse cisplatin drug resistance through multiple targets, and provides a new idea for constructing a lung cancer precision treatment scheme for reversing cisplatin drug resistance through multiple targets.

This invention relates to the field of encryption and anti-counterfeiting technology, specifically to a method for preparing and using an organic Sn(IV)-based metal halide reversible light-emitting conversion triple anti-counterfeiting material, comprising introducing organic ligands into a Sn(IV)X4 lattice and doping with ns 2 This invention uses Sn(IV) with a high oxidation state to replace Pb(II) in order to obtain anti-counterfeiting materials. 4+ The outer electron configuration is 4d 10 5s 0 The absence of unstable 5s orbitals gives Sn(IV)-based metal halides their typically excellent environmental and thermal stability, providing the compounds with a rigid crystal structure and stereochemical inertness. Furthermore, through ns... 2 Type Sb metal ions 3+ Doping strategies are employed to enhance the luminescence efficiency of low-dimensional organotin (IV)-based metal halides. This invention utilizes Sb... 3+ Ion doping methods are used to modulate the optical properties of compounds. Sb 3+ Ions belong to ns 2 Type metal ions and Sn 4+ With similar ionic radii and unique photophysical properties, it solves the problem of low luminous efficiency in existing luminescent materials.

The disclosure provides a metal ion doped lithium iron phosphate material and a preparation method and application thereof, and relates to the technical field of lithium batteries. The metal ion doped lithium iron phosphate material comprises flaky lithium iron phosphate and metal ions doped on the flaky lithium iron phosphate, and the flaky lithium iron phosphate has a porous structure. The method comprises the following steps: using an organic metal compound as a deposition raw material to deposit a carbon layer and metal oxide particles on the surface of a porous Fe2O3 flaky precursor to obtain a composite material; mixing the composite material, a lithium source and a phosphorus source according to a stoichiometric ratio, and then drying and sintering to obtain an M-LiFePO4 material. The M-LiFePO4 prepared by the disclosure has good uniformity and is not prone to agglomeration, inherits the two-dimensional flaky morphology of the precursor material and has a porous structure, has good rapid charging and discharging capacity, and improves the rate performance of the lithium iron phosphate material through doping of metal ions.

The invention provides a sodium ion battery positive electrode modified material and a preparation method thereof, and relates to the technical field of sodium ion battery materials. The preparation method of the sodium ion battery positive electrode modified material comprises the following steps: providing a nickel source, a manganese source and an iron source, preparing a transition metal oxide precursor, and preparing a single crystal NaNixFeyMnzO2 material from the transition metal oxide precursor and a sodium salt through a sintering process, 0.2 < = x < = 0.4, 0.1 < = y < = 0.4, 0.2 < = z < = 0.4, the single crystal NaNi < x > Fe < y > Mn < z > O < 2 > material is subjected to ion doping and co-coating treatment to obtain the sodium ion battery positive electrode modified material. The prepared battery positive electrode modified material can improve the cycling stability of the battery.

The invention relates to a preparation method of a gallium ion-doped lithium lanthanum zirconium oxide solid electrolyte, and belongs to the field of solid electrolytes. The preparation method comprises the following steps: adding lithium carbonate, lanthanum oxide, zirconium oxide, gallium oxide, a Ga < 3 + >-hydrogen-based silsesquioxane chelating auxiliary agent and ethanol into a ball milling tank for ball milling, drying, and then putting into a muffle furnace for pre-sintering to obtain pre-sintered powder; putting the pre-sintered powder into the ball milling tank again for ball milling, and tabletting to obtain a green body; and placing the green body in a sintering furnace, and carrying out high-temperature sintering in an oxygen atmosphere to obtain the gallium ion-doped lithium lanthanum zirconium oxide solid electrolyte, the Ga < 3 + >-hydrogen-based silsesquioxane chelating auxiliary agent is prepared from gallium fluoride, lithium carbonate, hydrogen-based silsesquioxane, citric acid and deionized water; by doping gallium ions, the ionic conductivity can be remarkably improved; and after the lithium lanthanum zirconium oxide is placed in an air atmosphere for 30 days, the retention rate of ionic conductivity is greater than 97%, and the problem of poor stability of lithium lanthanum zirconium oxide is solved.

A method for compensating electrical properties of a super-junction device structure, comprising: providing a first batch of wafers, the first batch of wafers comprising a test wafer and a plurality of to-be-compensated wafers; forming a first epitaxial layer in the test wafer, the first epitaxial layer having first ions; obtaining a first resistance value of the first epitaxial layer; obtaining an optimal resistance value corresponding to the first epitaxial layer in a super-junction device structure of the first batch of wafers; obtaining an epitaxial doping process parameter deviation value corresponding to adjustment of the first resistance value to the optimal resistance value; compensating an epitaxial doping process according to the epitaxial doping process parameter deviation value; and forming a second epitaxial layer in the to-be-compensated wafers using the compensated process parameter. By converting the total amount of first ion doping into an accurate resistance value for characterization, the process parameter adjustment has an accurate basis, so as to improve the doping mismatch of the super-junction device structure in the to-be-compensated wafers and improve the electrical properties of the super-junction device structure.

The invention discloses a high-performance long-cycle lithium iron phosphate positive electrode material and a preparation method thereof, and solves the technical problem of poor long cycle performance of existing lithium iron phosphate due to non-uniform and unstable carbon layer network. The preparation method comprises the following steps: S1, mixing and ball-milling iron phosphate A and iron phosphate B with different specific surface areas, lithium carbonate, a carbon source, an organic polymer dispersant and a metal ion doping agent to form precursor slurry; s2, drying the precursor slurry to obtain a precursor yellow material; s3, performing primary calcination on the precursor yellow material in an inert gas atmosphere to obtain lithium iron phosphate powder, and crushing the lithium iron phosphate powder; s4, uniformly mixing the crushed lithium iron phosphate with a carbon source, a nitrogen-containing organic matter and a metal ion doping agent, and carrying out spray drying after ball milling; and S5, carrying out secondary calcination on the spray-dried material in an inert gas atmosphere to obtain the lithium iron phosphate with the nitrogen atom-doped carbon coating layer. The lithium iron phosphate positive electrode material has the advantages of stable structure, good long cycle performance and the like.

This invention belongs to the field of materials technology, specifically relating to a calcium-doped ammonium polyvanadate cathode material, its preparation method, and its application in aqueous zinc-ion batteries. The preparation method includes: dissolving ammonium metavanadate and anhydrous calcium chloride in deionized water, adding hydrochloric acid to adjust the pH of the solution, continuing stirring to ensure thorough mixing, subjecting the mixed solution to a hydrothermal reaction, cooling to room temperature, centrifuging and washing, and vacuum drying to obtain Ca-NVO. This material prepares Ca-NVO via a simple one-step hydrothermal method, and further reactions can further convert Ca... 2+ Ca is doped into the electrode material. 2+ The introduction of Ca can serve as an interlayer support, improving the stability of the crystal structure, and Ca... 2+ It induces the formation of oxygen vacancies, improves reaction kinetics, increases reversible capacity, effectively promotes ion diffusion and charge transfer, improves the conductivity of the material, reduces its internal resistance, and maintains the structural flexibility and stability of the material, thereby enhancing the overall performance of aqueous zinc-ion batteries.

The application discloses a vanadium ion doped phosphate-based luminescent material, a preparation method and application thereof, and a chemical general formula of the luminescent material is Ca9AlP 7(1‑x) O 28 :xV 5+ , wherein x=0.005-0.04. The luminescent material can generate wideband emission from 400nm to 600nm under excitation of 300nm ultraviolet light, and the peak position is near 480nm. The vanadium ion doped phosphate-based luminescent material emits a spectrum with an integral intensity Omega, which changes as a function of temperature T, Omega=1.457*exp(-T / 145.367)-0.169, and the relative sensitivity obtained at 250 DEG C reaches 2.03% DEG C ‑1 . The material has application potential in the field of optical thermometers and the like. In addition, the luminescent material has the advantages of simple preparation method, low cost and the like.

The present application relates to the field of lithium ion batteries, in particular to a composite cathode material and a preparation method and application thereof.The preparation method provided by the present application comprises the following steps: S1, mixing high-nickel NCA precursors, medium-nickel NCM precursors, lithium sources, bulk doping sources and carbon-coated sources to obtain a precursor mixture; the mass ratio of the high-nickel NCA precursors and the medium-nickel NCM precursors is (6.5:3.5) to (7.5:2.5); the bulk doping source comprises at least one of a cation doping source and an anion doping source; S2, performing multi-stage sintering, annealing and crushing on the precursor mixture to obtain a composite cathode material.The present application successfully prepares a cathode material which is superior to traditional NCA in terms of high capacity, long cycle life, excellent rate performance and excellent thermal safety through the synergistic effect of the core-shell gradient structure design, bulk doping and surface carbon coating, and in combination with a multi-stage sintering process.

The invention discloses a composite electrolyte for an aqueous zinc ion battery and application of the composite electrolyte, and belongs to the technical field of electrochemical energy storage. The composite electrolyte comprises water, zinc salt and a composite additive; the composite additive includes group III metal ions as a first additive and group V metallate ions as a second additive. The invention also provides a group III metal cation doped vanadium oxide positive electrode material matched with the first additive element in the electrolyte. The composite electrolyte provided by the invention is combined with a correspondingly doped positive electrode material, so that the composite electrolyte can synergistically act on positive and negative electrode interfaces of the battery: V-group metal acid radical ions preferentially regulate and control a zinc negative electrode interface, guide zinc to be uniformly deposited and inhibit side reaction; group III metal ions are mainly used for stabilizing the bulk phase and interface structure of the positive electrode material and inhibiting the dissolution of active substances. According to the technical scheme, the rate capability, the cycling stability and the service life of the water-based zinc ion battery are remarkably improved, and the water-based zinc ion battery has important application value.

This application discloses a perovskite-structured high-entropy ceramic material with excellent dielectric temperature stability. The chemical formula of the high-entropy ceramic material is (Ca... 0.2 Sr 0.2 Ba 0.2 Mg 0.2 Bi 0.1 Na 0.1 (Ti1) x Zr x O3, x=0.05~0.2. This application employs an A-site high-entropy material composition design that enables elements to break through the solid solution limit, achieving greater solid solubility in the material system. By using Zr 2+ Ti at the B site in ion-substituted ceramics 2+ The composition design approach successfully achieved B-site ion doping, resulting in well-grown, dense grains within the ceramic. The sample microstructure exhibited few pores, with elements uniformly distributed throughout the ceramic without agglomeration. By optimizing and controlling the ceramic's microstructure, the dielectric ceramic obtained in this application possesses a high dielectric constant and excellent temperature stability, with capacitance-temperature variations meeting both X7R and X6R capacitor standards.

The application discloses a high-valence cation-doped amorphous-dominant halide solid electrolyte and a preparation method and application thereof. x La y M z Cl3, wherein M is selected from Hf or Nb, wherein x=0.35-0.40, y=0.52-0.53, and n is the valence of M; the electrolyte has an amorphous-crystal composite structure, wherein the content of the amorphous phase is 70-80%. The application provides application of the electrolyte as a solid electrolyte of a full solid-state lithium battery, and provides a full solid-state lithium battery. The preparation method is simple and has good repeatability, the obtained electrolyte has high amorphous phase content, high ionic conductivity and excellent interface stability through high-valence cation doping, and the obtained battery has excellent ability of inhibiting lithium dendrite and long cycle stability.

The invention discloses a halide-doped P2-phase layered oxide positive electrode material and a preparation method thereof, a positive electrode and a sodium ion battery, and relates to the technical field of batteries. The chemical formula of the P2-phase layered oxide positive electrode material is NaaNibMcMndOeXf, a double-ion doping strategy is adopted, the doped halogen exerts the effect of improving the working voltage in a structural body phase, so that the relatively high capacity is obtained in a relatively low voltage window, and the M element is used as a structural support column to effectively improve the structural stability. The preparation method adopts a one-step method, is simple to operate, adopts low-temperature reaction, does not need special equipment or expensive precursors, is simpler and more economical, and can realize large-scale production. The prepared battery has excellent long cycle stability, high working voltage and excellent rate capability; the preparation method is beneficial to improving initial capacity and availability of active sites, improving cycle stability, enhancing high rate capability and reaction kinetics, and endowing the material with excellent environmental stability and processing applicability.

A semiconductor structure and a fabricating method are disclosed. The method includes: providing a substrate; forming a bit line contact structure and a bit line on the substrate; the bit line contact structure is located between the bit line and the substrate; performing ion doping treatment on the sidewalls of the lower part of the bit line contact structure to forming a doped region; performing nitridation treatment on the doped region to transform the doped region into a nitride structure.

A disclosed electrochemical capacitor includes a positive electrode, a negative electrode, a separator, and an electrolyte having lithium ion conductivity. The positive electrode includes a positive electrode current collector and a positive electrode mixture layer that is carried on the positive electrode current collector and that undergoes reversible anion doping. The negative electrode includes a negative electrode current collector and a negative electrode mixture layer that is carried on the negative electrode current collector and that undergoes reversible lithium ion doping. The negative electrode mixture layer contains a negative electrode active material, a conductive agent, a binder, and a dispersant. The ratio of the mass of the dispersant to the mass of the negative electrode mixture layer is greater than the ratio of the mass of the binder to the mass of the negative electrode mixture layer.

The application relates to the technical field of battery materials, in particular to a layered oxide positive electrode material, a preparation method thereof and application to a sodium battery. The expression of the layered oxide positive electrode material is: AB2Y2X2O12, wherein, A is a sodium storage layer site doping element, B is a transition metal layer cation site doping element, C is a transition metal layer anion site doping element, and Y is a shuttle ion doping element. In the charging and discharging process of the layered oxide positive electrode material, the shuttle ion shuttles between the transition metal layer and the sodium storage layer, which can improve the stability and sodium ion diffusion rate of the material, and effectively solve the problems of unstable iron-manganese-based layer oxygen circulation, low coulomb efficiency and slow sodium ion diffusion rate.

The invention relates to the technical field of waste battery recovery, and particularly discloses a direct regeneration method of a high-performance waste lithium iron phosphate battery material. The materials comprise waste lithium iron phosphate, lithium carbonate, soluble salt corresponding to magnesium or titanium, graphene, a glucose reducing agent, an adaptive organic solvent and the like; the method comprises the following steps: pretreating the waste battery, calcining to prepare an oxidation precursor, respectively preparing an ion dopant solution and a graphene dispersion liquid, sequentially mixing the raw materials, carrying out wet ball milling, drying and inert atmosphere preheating, and synchronously carrying out oxidation precursor reduction, ion doping and graphene compounding through high-temperature reduction. The regenerated lithium iron phosphate material can be used in the fields of electric vehicle power batteries, high-end energy storage systems and the like, and has the advantages of excellent electrochemical performance, structural stability and compaction performance; the method provided by the invention has the advantages of controllable operation, flexible raw material adaptation and high-valued recovery of waste materials, and can effectively improve the performance shortages existing in the traditional process.

The invention discloses a hard mask layer structure for silicon carbide substrate ion implantation and an ion implantation method, and belongs to the technical field of semiconductor coating. The hard mask layer structure for silicon carbide substrate ion implantation comprises a silicon carbide substrate; the amorphous carbon film layer is arranged at the top of the silicon carbide substrate, and a first silicon oxide layer is further arranged between the silicon carbide substrate and the amorphous carbon film layer and used for protecting the silicon carbide substrate; and the second silicon dioxide layer is arranged at the top of the amorphous carbon film layer. The amorphous carbon mask is used as the main body structure of the hard mask layer to perform ion doping on the silicon carbide substrate, so that the method has the advantages of high productivity, low cost, no need of newly adding a process machine and high selection ratio.

The invention belongs to the technical field of glass optical fibers, and discloses a gadolinium aluminosilicate erbium-doped glass optical fiber and a preparation method and application thereof. The gadolinium aluminosilicate erbium-doped glass optical fiber comprises a fiber core and a cladding, and the fiber core is prepared from the following raw materials in mole percent: 50 to 78.5 percent of SiO2, 10 to 20 percent of Al2O3, 0.5 to 2.5 percent of Er2O3 and 1 to 30 percent of Gd2O3. The gadolinium aluminosilicate erbium-doped glass optical fiber is prepared by a fiber core melting method, has excellent mechanical properties and light guide properties, effectively solves the problems of low Er ion doping solubility and easy clustering of Er ions in traditional silica glass, can realize strong near-infrared luminescence of Er ions in the glass, and has a wide application prospect. The ion doping concentration is high, the maximum gain coefficient can reach 1.88 dB / cm, and the method can be applied to the field of optical amplifiers.

The invention discloses a preparation method of stable pink erbium ion-doped zirconia ceramic with photochromic luminescence and a product thereof, 2-6 mol% yttria-stabilized zirconia (2-6YSZ) is used as a raw material, an Er (NO3) 3 solution is used as a coloring ion solution, Er < 3 + > ions are doped, and the stable pink erbium ion-doped zirconia ceramic with photochromic luminescence is obtained. The erbium ion doped zirconia ceramic which has a stable single-phase structure, is pink and has photochromic luminescence is successfully prepared through a high-temperature sintering process. The zirconia ceramic not only can generate a relatively fast photoluminescence phenomenon and has obvious color conversion, but also has relatively strong polychromatic photoluminescence performance. The product obtained by the invention has wide application prospects, and can be applied to intelligent terminal equipment, such as polychromatic photochromic luminescent ceramic backboards, information storage, encryption, ultraviolet detection, temperature monitoring and the like.

This invention provides a europium ion-doped titanate compound, its preparation method, and its applications, relating to the field of rare-earth luminescent materials technology. The titanate compound provided by this invention has the chemical formula K₂Ti₆O. 13 :xEu 3+ The titanate compound is monoclinic. This was achieved through K2Ti6O... 13 Doping with an appropriate amount of Eu 3+ The presence of ions in the rare-earth phosphors, such as K2Ti6O, imparts a high color rendering index and quantum yield, significantly enhancing the luminous performance of white LEDs. 13 With excellent electrochemical performance and high conductivity, the rare earth phosphor provided by this invention can also be used in lighting, displays, photocatalysis, and energy storage. Furthermore, the preparation method provided by this invention is simple, operates under mild conditions, and is suitable for large-scale production, thus possessing broad application potential.

The invention relates to a Zn < 2 + > ion doped Cd-based halide perovskite luminescent material and a preparation method thereof, and belongs to the field of X-ray luminescence and detection. The chemical formula of the luminescent material is shown in the specification. CsCd (1-x) Cl3: xZn < 2 + >, wherein 0 lt; x is smaller than or equal to 0.4. The luminescent material is obtained by mixing Zn < 2 + > ions, Cd < 2 + > ions and Cs < + > ions at room temperature. The preparation method comprises the following steps: fully dissolving Zn < 2 + > ions and Cd < 2 + > ions in concentrated hydrochloric acid according to a molar ratio, adding a precursor solution containing Cs < + > ions, magnetically stirring for a plurality of hours, and drying to obtain the luminescent material. The luminescent material not only has the light yield as high as 83700 photons MeV <-1 >, but also has the extremely low detection limit of 52.3 nGyairs <-1 >. In addition, the X-ray luminescent material has the advantages of being easy to prepare, low in cost, good in stability and the like, and is suitable for large-scale production.

The embodiment of the invention relates to the technical field of semiconductors, and discloses a semiconductor terminal structure and a semiconductor device. The semiconductor terminal structure comprises a substrate; the epitaxial layer is located above the substrate, and the epitaxial layer is provided with a first ion doping type; a plurality of junction termination extension layers formed in the epitaxial layer, the plurality of junction termination extension layers having a second ion doping type; the plurality of junction termination extension layers divide a part of the epitaxial layer into a plurality of terminal epitaxial layers; each terminal epitaxial layer and each junction terminal extension layer extend along a first direction and a second direction; the plurality of junction termination extension layers and the plurality of terminal epitaxial layers are alternately arranged on a plane parallel to the substrate, the first direction is a direction parallel to the substrate, and the second direction is a direction perpendicular to the substrate. According to the semiconductor terminal structure provided by the invention, the problem of local electric field concentration can be relieved under the same junction terminal area length, and the voltage borne by the junction terminal area of the semiconductor device is improved.

The application discloses a chromium-doped ultra-wideband near-infrared fluorescent material and a preparation method thereof. 2‑x A x Si2O7:yCr M , wherein A is one or more of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Ga, 0<=x<=0.5, 0.001<=y<=0.3, and M is one or more of 3+ and 4+. The preparation method comprises the following steps: taking raw materials according to the stoichiometric ratio, grinding and mixing; pre-calcining at 600-1200 DEG C under an air atmosphere; grinding again after cooling, calcining at 1200-1600 DEG C, keeping warm, and cooling to room temperature. The fluorescent powder can be efficiently excited by blue light, emits near-infrared light covering the NIR-I and NIR-II regions, and the peak position and half-height width of the emission spectrum can be regulated by adjusting the molar concentration of A ion replacing Sc and the chromium ion doping concentration.

The application belongs to the technical field of luminescent materials, and particularly relates to a cerium ion doped borohydride-based cesium halide anti-perovskite and a preparation method and application thereof. The cerium ion doped borohydride-based cesium halide anti-perovskite provided by the application has a structure of Cs3Cl[B 12 H 12 ]:Ce 3+ . The cerium ion doped borohydride-based cesium halide anti-perovskite is non-toxic, stable and has high luminous efficiency.