73results about How to "High region" patented technology

A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

An illumination-component extractor (illumination component extraction section) extracts an illumination component Log from a picked-up image (original image) picked up an image sensor having a photoelectric conversion characteristic which comprises a linear characteristic region and a logarithmic characteristic region. A reflectance component determiner (subtraction section) extracts a reflectance component Log(R1). A compressor (illumination component compression section) subjects at least the illumination component Log of the logarithmic characteristic region to DR compression. Image production mean (image production section) produces a new image (synthetic image) based on the DR-compress illumination component and the reflectance component.

A display device, including a content receiving unit configured to receive a high dynamic range image, an image processing unit configured to detect a first region whose luminance value is equal to or greater than a reference luminance value within the high dynamic range image and perform tone mapping on an image of the first region based on feature information of the image of the first region, and a display unit configured to display a low dynamic range image on which the tone mapping is performed.

Disclosed is a system, method, and program for mapping logical addresses to physical sectors on a storage device including at least one storage medium surface. A determination is made of logical addresses that are specified to be stored in a high throughput region on one storage medium surface. At least two read / write heads operate on the storage medium surface including the high throughput region to increase performance of access operations in the high throughput region. A mapping is generated of the determined logical addresses to the high throughput region. The logical addresses mapped to the high throughput region are capable of being non-contiguous.

A case for an HVAC system has at least two molded shells joined together along a parting line to enclose a heat exchanger chamber, a blower chamber, and a diffuser section. The diffuser section includes a floor, a ceiling, an outer wall, and an inner wall around a longitudinal axis. The walls provide an airflow path through the diffuser between the blower and heat exchanger chamber, and the airflow path makes a substantially right angle turn into the heat exchanger chamber which results in a tendency to create a high flow region at the outer wall because of centrifugal effects. The outer wall is shaped to form a wall guide partially projecting into the airflow path in the diffuser, wherein the wall guide has an upstream encroaching surface and a downstream retreating surface so that a portion of the guided air is directed from the outer wall toward the inner wall. At least one of the floor or the ceiling includes a vane projecting into and deflecting the guided air in the airflow path, wherein the vane has an upstream end proximate to the wall guide and a downstream end extending toward the heat exchanger chamber for initiating a portion of the substantially right angle turn for a portion of the airflow.

A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

In the manufacture of a composite cathode, a porous structure is made of the electrolyte material by sintering a mixed material of primary material of the electrolyte and a secondary material. The mixture is treated to sinter the primary material. The secondary material is removed. The secondary material during sintering inhibits porosity loss and grain growth in the primary material while enabling formation of good necks for interparticle contact. The porous structure is then infiltrated with a liquid that contains precursors of an electrocatalytically active material. The infiltrated structure is then heated to convert the precursors to an electrocatalytically active material.

The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.

A hydrogen sensor includes a solid electrolyte made of a barium cerium oxide, and a first electrode and a second electrode that are formed on the surface of the solid electrolyte. The first and the second electrodes are made of a material having a catalytic effect with respect to an oxidation reaction of hydrogen and are made of the same material. Thus, the hydrogen sensor can be inexpensive and has good hydrogen selectivity and responsiveness to detection, and thus it is possible to measure hydrogen in a high concentration region.

An amorphous carbon (DLC) film having excellent adhesion at high temperature is provided. An amorphous-carbon-based hard multilayer film, which is formed on a surface of a substrate, includes a base layer formed at a substrate side, a surface layer formed at a surface side, and a compositional gradient layer formed between the base layer and the surface layer, wherein the base layer includes a nitride or a carbo-nitride of an element M expressed by the following formula (1), the surface layer includes an amorphous carbon film containing C of 50 atomic percent or more, and the compositional gradient layer is a layer in which the element M and nitrogen are decreased, and carbon is increased from the base layer to the amorphous carbon film:M1-x-yCxNy ,   (1)(wherein M is at least one selected from a group 4A element in the periodic table, a group 5A element, a group 6A element, Al, and Si, and x and y denote atomic ratios in the formula, and x is 0.5 or less, y is 0.03 or more, and 1-x-y is more then 0).

The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

A bisanthracene derivative having a specific structure and an organic electroluminescence device having an organic thin film layer which has one layer or a plurality of layers including at least a light emitting layer, and is disposed between a cathode and an anode and contains the bisanthracene derivatives singly or as a component of a mixture. The organic electroluminescence device exhibits a great efficiency of light emission in a region including a high luminance region and has a long life, and the bisanthracene derivative realizes the device.

An object is to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide, and another object is to provide a semiconductor device using silicon carbide. A semiconductor substrate is manufactured through the steps of: adding ions to a silicon carbide substrate to form an embrittlement region in the silicon carbide substrate; bonding the silicon carbide substrate to a base substrate with insulating layers interposed therebetween; heating the silicon carbide substrate and separating the silicon carbide substrate at the embrittlement region to form a silicon carbide layer over the base substrate with the insulating layers interposed between therebetween; and performing heat treatment on the silicon carbide layer at a temperature of 1000° C. to 1300° C. to reduce defects of the silicon carbide layer. A semiconductor device is manufactured using the semiconductor substrate formed as described above.

An amorphous carbon (DLC) film having excellent adhesion at high temperature is provided. An amorphous-carbon-based hard multilayer film, which is formed on a surface of a substrate, includes a base layer formed at a substrate side, a surface layer formed at a surface side, and a compositional gradient layer formed between the base layer and the surface layer, wherein the base layer includes a nitride or a carbo-nitride of an element M expressed by the following formula (1), the surface layer includes an amorphous carbon film containing C of 50 atomic percent or more, and the compositional gradient layer is a layer in which the element M and nitrogen are decreased, and carbon is increased from the base layer to the amorphous carbon film:M1-x-yCxNy  (1),(wherein M is at least one selected from a group 4A element in the periodic table, a group 5A element, a group 6A element, Al, and Si, and x and y denote atomic ratios in the formula, and x is 0.5 or less, y is 0.03 or more, and 1-x-y is more then 0).

A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.

A sensor is provided near an additive manufacturing (AM) part during fabrication to provide information about the condition of the additive material during fabrication. Sensor measurements are used for in situ monitoring and control of the AM system. By placing a sensor at this location, information at or near this location may be collected and then analyzed to determine if the AM process is proceeding acceptably, or if real-time modifications to the process should be made to improve the performance of the process. Conditions monitored by the sensor may include the melt pool dimensions, the temperature ahead of and at the melt pool, properties of the powder bed such as temperature and particle size distribution, local powder conditions, prior layer condition, and applied layer condition behind the laser. A control system uses these monitored conditions to adjust and control the ongoing AM fabrication process.

A MOS transistor having a recessed channel region is provided. A MOS transistor includes a source region and a drain region disposed in an active region of a semiconductor substrate and spaced apart from each other. A gate trench structure is disposed in the active region between the source and drain regions. A gate electrode is disposed in the gate trench structure. A gate dielectric layer is interposed between the gate trench structure and the gate electrode. A semiconductor region is disposed between the gate trench structure and the gate dielectric layer. The semiconductor region is formed of a different material from the active region. A method of fabricating the MOS transistor having a recessed channel region is also provided.

Provided is a hot-forged 6xxx-series aluminum alloy having excellent corrosion resistance and still having both high strength and good ductility. A forged 6xxx-series aluminum alloy having a specific chemical composition after solution treatment is further subjected to warm working to introduce dislocations into the forged aluminum alloy microstructure. This allows the forged aluminum alloy after artificial aging to have a microstructure which has a high dislocation density, includes a large proportion of small angle grain boundaries, and has a high average number density of precipitates. Thus, the resulting forged aluminum alloy has a 0.2% yield strength of 400 MPa or more and an elongation of 10% or more and combines properties necessary for suspension parts.

A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source / drain regions disposed at two sides of the first gate structure. A first source / drain to gate distance is between each first source / drain region and the first gate structure. The second transistor includes a second gate structure and two source / drain doped regions disposed at two side of the second gate structure. A second source / drain to gate distance is between each second source / drain region and the second gate structure. The first source / drain to gate distance is smaller than the second source / drain to gate distance.

The invention discloses a RF coaxial connector, which includes a socket and an adapter. The socket includes an outer conductor and a center conductor. The adapter includes a plug capable of being inserted into the socket. The adapter also includes an outer conductor and a center conductor that can be in contact with the outer conductor and the center conductor of the socket, respectively. A dumbbell-shaped first insulating body is disposed inside the plug of the adapter and filled between the outer conductor and the center conductor of the adapter. The first insulating body has a middle portion narrower than two end portions thereof such that an annular gap is formed between the middle portion of the first insulating body and the outer conductor of the adapter, thereby forming different impedance regions at the connection regions of the plug and the socket. Therefore, a high impedance region and a low impedance region can compensate each other so as to decrease the adverse effect of the high impedance region on the connector performance and improve electrical and RF performance of the product. Compared with the prior art, the connector of the present invention allows a larger axial offset.

A flat metal particle-containing composition including flat metal particles and a heterocyclic ring compound, wherein the heterocyclic ring compound has a silver interaction potential EAg which is lower than −1 mV.

An image capturing element of an image capturing section 2 has a color filter with a Bayer matrix, and interpolation unit 6 implements an interpolation process to an image signal for each pixel received from the image capturing element by using image signals of adjacent pixels to obtain an image signal of R, G and B for the respective pixels. High-frequency component extracting unit 7 extracts a high frequency component from the G signal; false-color reduced color signal generation unit 8 obtains, for the respective pixels, a false-color reduced color signal (R+B−2G) in which an effect of a false color is reduced; and, chroma signal generation unit 9 generates a chroma signal, which is an absolute value of the false-color reduced color signal. Suppression unit 10 suppresses the false color on the basis of the high frequency component extracted by the high-frequency component extracting unit 7 and the chroma signal for the respective pixels generated by the chroma signal generation unit 9.

A display unit including pixels which display an image according to an image data signal transferred corresponding to each of the pixels, and a controller to receive and convert an external input video signal to transfer a luminance conversion data signal corresponding to the respective pixels. The controller includes: an input image data to receive the external input video signal; a scale factor calculation unit to determine at least one control factor for luminance conversion with respect to an input video signal corresponding to the pixels received from the input image data receiving unit; and a luminance data conversion unit to convert luminance data with respect to the respective pixels using the at least one determined control factor and to output the luminance conversion data signal.

An image processing apparatus includes: an image pickup section for converting an object light into image signals of Bayer RGB array; a color information detecting section for obtaining color information of the object from the image signals obtained by the image pickup section; a first luminance data generating section for finding luminance data for use in edge enhancement processing based on G signals of the image signals obtained by the image pickup section; a second luminance data generating section for finding luminance data for use in edge enhancement processing based on all color signals of the image signals; a selector for providing an output by switching between outputs of the first and second luminance data generating section; and a selection signal generating section for generating selection signal for controlling the switching of the selector based on color information obtained at the color information detecting section. The image processing apparatus is thereby achieved as capable of edge enhancement processing at favorable S / N and with less occurrence of edge noise in high saturation regions and low saturation regions.