The present application proposes a
wafer epitaxial film thickness measurement method and
system based on trajectory
adaptation, belonging to the field of measurement and testing and
semiconductor manufacturing technology. The measurement method includes
wafer feeding and preliminary transfer steps,
wafer positioning and correction compensation steps, measurement path planning steps, film thickness
data acquisition and
processing steps, data comparison and trend
report generation steps, and abnormal alarm triggering steps. The measurement
system includes feeding and transferring units, positioning and compensation units, measurement path planning units, film thickness
data acquisition and
processing units, data comparison and trend
report generation units, and abnormal alarm triggering units. The positioning and compensation unit includes a correction mechanism and a compensation mechanism. The present application improves the precision and efficiency of wafer epitaxial film thickness measurement through trajectory
adaptive planning and
edge enhancement algorithm; combined with cloud collaborative analysis, it realizes real-time abnormal alarm and
trend prediction, which helps to improve the yield and intelligent level of
semiconductor manufacturing.